• Journal of Electrical Engineering and Technology
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• 제6권4호
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• pp.539-542
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• 2011

Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying $O_2$ ratios. The device performance is significantly affected by adjusting the $O_2$ ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1275_1276
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• 2009

Micropump is very useful component in micro/nano fluidics and bioMEMS applications. Using the flexural vibration mode of PZT bar, a piezopump is successfully made. The PZT bar is polarized with thickness direction. The proposed structure for the piezo-pump consists of an input and an output port, piezoelectric ceramic actuator, actuator support, diaphragm. The traveling flexural wave along the bar is obtained by dividing two standing waves which are temporally and spatially phase shifted by 90 degrees from each other. Fluid is drawn into a forming chamber, eventually the forming chamber closes trapping the fluid therein.

• Current Optics and Photonics
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• 제2권1호
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• pp.85-89
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• 2018

This paper presents a new, efficient hybrid photonic-plasmonic structure. The proposed structure efficiently and with very high accuracy combines the resonant mode of a low-mode-volume photonic-crystal nanocavity with a bowtie nanoantenna's plasmonic resonance. The resulting enormous enhancement of light intensity of about $1.1{\times}10^7$ in the gap region of the bowtie nanoantenna, due to the effective optical-resonance combination, is realized by subtle optimization of the nanocavity's optical characteristics. This coupled structure holds great promise for many applications relying on strong confinement and enhancement of optical field in nanoscale volumes, including antennas (communication and information), optical trapping and manipulation, sensors, data storage, nonlinear optics, and lasers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.254-257
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• 2008

We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2006년도 춘계 학술발표회 논문집
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• pp.111-120
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• 2006

Opening size of 3 types of geotextile were tested using dry and wet sieving methods to evaluate characteristics of test methods and to compare the test results. Judging from test results, dry sieving method is a poor test, having many problems causing many errors but a simple-quick test. Wet sieving method is a very specific test avoiding many of the problems of dry sieving such as electrostatic charges, trapping in the geotextiles and so on. However, one of wet sieving tests, KSK ISO12956, takes long time to complete a test and is too strict to handle loss of granular material. Generally, opening size of a geotextile by wet sieving test is smaller than that of dry sieving test. Especially, opening size by KSF 2126 which is one of wet sieving test but disused at present anymore is similar or smaller than that by KSK ISO12956 method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.119-119
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• 2008

The electrical characteristics of Metal-Ferroelectric-Nitride-Oxide-Silicon (MFNOS) structure is studied and compared to the conventional Silicon-Oixde-Nitride-Oxide-Silicon (SONOS) capacitor. The ferroelectric blocking layer is SrBiNbO (SBN with Sr/Bi ratio 1-x/2+x) with the thickness of 200 nm and is fabricated by the RF sputter. The memory windows of MFNOS and SONOS capacitors with sweep voltage from +10 V to -10 V are 6.9 V and 5.9 V, respectively. The effect of ferroelectric blocking layer and charge trapping on the memory window was discussed. The retention of MFNOS capacitor also shows the 10-years and longer retention time than that of the SONOS capacitor. The better retention properties of the MFNOS capacitor may be attributed to the charge holding effect by the polarization of ferroelectric layer.

• 대한전자공학회논문지
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• 제21권6호
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• pp.51-55
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• 1984

다결정 반도체의 전도모델로써 grain boundary와 표면에서 일어나는 band-bending을 가정하였다. 이 가정에 경계면에서 일어나는 트랩핑을 고려한 새로운 박막 트랜지스터의 전도이론을 제시하였다. S1O2를 절연체로 사용한 CdSe 박막 트랜지스터를 제조하고 그 특성을 측정하였다. 이때 CdSe는열 증착하였으며 SiO2는 고주파 스펏터링 하였다. 이론으로 구한 박막 트랜지스터의 출력곡선과 측정에 의한 실험치를 비교 및 검토하였다.

• ETRI Journal
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• 제31권1호
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• pp.62-64
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• 2009

We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.883-886
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• 1999

We deposited tungsten gate electrode on gate SiO$_2$by thermal LPCVD with WF$_{6}$, SiH$_4$ and H$_2$. The resistivity was ~10$\mu$Ωcm and exhibited good adhesion ability on oxide when the temperature was higher than 40$0^{\circ}C$. We find that, however, both the low-field current and the charge-trapping characteristics were inferior to the control devices. The oxide degradation by fluorine during the tungsten deposition must be minimized to use the tungsten as alternative gate electrode.e.

• 대한전자공학회논문지
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• 제24권4호
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• pp.625-630
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• 1987

Thermal evaporated SiO rf sputtered SiO2 thin films were most widely used to the gate oxide of TFTs. In this paper, the difference of trap density and distribution between SiO2 and SiO2 film were studied. TFTs using SiO and SiO2 thin film for the gate oxide were fabricated. The output characteirstics of TFTs and the time dpendencd of the leakage current were measured. Models of the carrier transport and carrier trapping in TFT were proposed. The trap density was obtained by substituting measured value for the equation derived from the proposed model. It was found that rf sputtered SiO2 had more traps at interface than thermal evaporated SiO.