Characterizations of tungsten thin-film grown by LPCVD on SiO$_2$

LPCVD 방식으로 SiO$_2$위에 증착된 텅스텐 박막의 특성 분석

We deposited tungsten gate electrode on gate SiO$_2$by thermal LPCVD with WF$_{6}$, SiH$_4$ and H$_2$. The resistivity was ~10$\mu$Ωcm and exhibited good adhesion ability on oxide when the temperature was higher than 40$0^{\circ}C$. We find that, however, both the low-field current and the charge-trapping characteristics were inferior to the control devices. The oxide degradation by fluorine during the tungsten deposition must be minimized to use the tungsten as alternative gate electrode.e.