• Tribology and Lubricants
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• 제32권3호
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• pp.101-105
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• 2016

Trap effect of groove is evaluated in a lubricating system using computational fluid dynamics (CFD) analysis. The simulation is based on the standard k-ε turbulence model and the discrete phase model (DPM) using a commercial CFD code FLUENT. The simulation results are also capable of showing the particle trajectories in flow field. Computational domain is meshed using the GAMBIT pre-processor. The various grooves are applied in order to improve lubrication characteristics such as reduction of friction loss, increase in load carrying capacity, and trapping of the wear particles. Trap effect of groove is investigated with variations in cross-sectional shape and Reynolds number in this research. Various cross-sectional shapes of groove (rectangular, triangle, U shaped, trapezoid, elliptical shapes) are considered to evaluate the trap effect in simplified two-dimensional sliding bearing. The particles are assumed to steel, and defined a single particle injection condition in various positions. The “reflect” boundary condition for discrete phase is applied to the wall boundary, and the “escape” boundary condition to “pressure inlet” and “pressure outlet” conditions. The streamlines are compared with particles trajectories in the groove. From the results of numerical analysis in the study, it is found that the cross-sectional shapes favorable to the creation of vortex and small eddy current are effective in terms of particle trapping effect. Moreover, it is found that the Reynolds number has a strong influence on the pattern of vortex or small eddy current in the groove, and that the pattern of the vortex or small eddy current affects the trap effect of the groove.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.133-133
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• 2010

We studied the thermal and electric effect of 2D and 3D p-n photovoltaic diode structures with and without surface texturing. By analyzing the numerical simulation results of I-V characteristics and lattice temperature distributions, we systematically studied the effect of different texturing structures and different doping concentration on the characteristics of the silicon p-n photovoltaic devices. The, efficiency of the device with the surface texturing shows more than ~ 2% enhancement compared to the reference devices without texturing. The tendency of the efficiency of doping concentration has been studied with boron doping of $10^{14}{\sim}10^{17}cm^{-3}$ and phosphorus doping of $10^{15}cm^{-3}$. In addition to that, the study of changing phosphorus doping of $10^{15}{\sim}10^{18}cm^{-3}$ with boron doping of $10^{14}cm^{-3}$ has been examined. It has been shown that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1226-1227
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• 2008

In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1549-1551
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• 2004

The Electromagnetic properties in BiPbSrCaCuO superconductor was studied. In the measurement of current-voltage characteristics, a voltage across the superconducting sample was observed on applying an external magnetic field. The voltage continues to appear the removal of the magnetic field. The appearance of the voltage is ascribed to the trapping of magnetic flux. Depanding on the direction of applied magnetic flux less than 2.5${\times}$10-5 T, the voltage in the magnetized sample increases or decreases. It is considered that mechanism of voltage occurrence can be explained by applying filament model.

• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.235-239
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• 2006

Charge dynamics in polymeric materials after aged under ac electric field using the pulsed electroacoustic (PEA) technique is reported. The emphasis is placed on charge decay. The charge dynamics of the ac aged additive free low density polyethylene (LDPE) samples under dc bias differ from the sample without ac ageing, indicating changes brought in by ac ageing. It is believed that a slow decay rate of charge in the ac aged sample is related to the formation of deep traps in the material. However, chemical analysis by infrared spectroscope (FTIR) and Raman microscope reveals no significant chemical changes taken place in the bulk of the material after ac ageing. Further experiments on irradiated LDPE have revealed a similar behaviour, i.e. the charge decay is slower in irradiated samples than that of fresh sample. The findings presented clearly indicate that space charge measurement can be used as a diagnostic tool to monitor ageing in polymeric materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.56-56
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• 2009

In this study, we fabricated the engineered $SiO_2/Si_3N_4/SiO_2$(ONO) tunnel barrier with high-k $HfO_2$ trapping layer for application high performance flash MLC(Multi Level Cell). As a result, memory device show low operation voltage and stable memory characteristics with large memory window. Therefore, the engineered tunnel barrier with ONO stacks were useful structure would be effective method for high-integrated MLC memory applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.270-270
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• 2009

The surface texturing technology is one of the methods to improve the efficiency of crystalline silicon solar cell. This process reduced the reflectance at the surface by the so-called double bounce effect and increased the light trapping. Among these surface texturing technology, the laser texturing is effective for multi-crystalline silicon solar cells which have random crystallographic directions. We investigated the characteristics of laser processing on the surface of the multi-crystalline silicon solar cells using the fiber laser.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.64-67
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• 2000

Tungsten silicide(WSi$_2$) is proposed for the alternate gate electrode of ULSI MOS devices. Good structural property and low resistivity of WSi$_2$ deposited by a low pressure chemical vapor deposition(LPCVD) method directly on SiO$_2$ is obtained after annealing. Especially, WSi$_2$-SiO2 interface remains flat after annealing tungsten silicide at high temperature. Electrical characteristics of annealed WSi$_2$-SiO$_2$-Si(MOS) capacitors were improved in view of charge trapping.

• Journal of Chest Surgery
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• 제21권6호
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• pp.1095-1098
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• 1988

Congenital cystic adenomatoid malformation[CCAM] is a rare disease that cause respiratory distress in the newborn and infants, but is one of the two causes along with lobar emphysema. This malformation has the pathologic characteristics which can be differentiated from other forms of diffuse cystic disease, i.e. CCAM is marked proliferation of the terminal bronchioles and that can enlarge rapidly by air trapping in cystic areas. The CCAM has a clinical importance because of rapid worsening respiratory distress, with tachypnea, subcostal retraction and cyanosis. This is a strict surgical condition and after operation[lobar, segmental resection or pneumonectomy] the symptoms relieved obviously. We experienced 6 cases of CCAM from July, 1980 to September, 1987 at the Department of Cardiovascular and Thoracic Surgery, Severance Hospital, College of Medicine, Yonsei University. The male patients were two and female patients were four. The age distribution was from premature to 10 year old. One of them was 27 weeks gestational premature female who was borne dead. The other 5 patients were performed on thoractomy[1 case pneumonectomy and 5 cases lobectomy]. The postoperative courses were good and no complications were seen.