• Journal of the Korean Vacuum Society
• /
• v.15 no.6
• /
• pp.624-629
• /
• 2006

The energy transfer process between GaN and Nd ions as well as Mg codoping effect were investigated in Nd-implanted GaN films. Photoluminescence (PL) and PL excitation spectroscopies were performed on $^4F_{3/2}{\rightarrow}^4I_{9/2}$ Nd ionic level transition. At least three below bandgap traps were identified in the energy transfer process. The number of one particular trap, which is assigned to be an isoelectronic Nd trap, is increased with the Mg-codoping. The emission efficiency with above gap excitation, which emulates the electrical excitation, is further increased in GaN:Mg,Nd.

• Journal of the Korean Institute of Telematics and Electronics T
• /
• v.35T no.1
• /
• pp.29-32
• /
• 1998

The low level leakage currents in silicon oxides were investigated. The low level leakage currents were composed of a transient component and a do component. The transient component was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The do component was caused by trap assisted tunneling completely through the oxide. The low level leakage current was proportional to the number of traps generated in the oxides. The low level leakage current may be a trap charging and discharging current. The low level leakage current will affect data retention in EEPROM.

• Journal of IKEEE
• /
• v.26 no.2
• /
• pp.306-312
• /
• 2022

We investigated electrical properties and deep level traps in 4H-SiC merged PiN Schottky (MPS) diodes with different barrier heights by different PN ratios and metallization annealing temperatures. The barrier heights of MPS diodes were obtained in IV and CV characteristics. The leakage current increased with the lowering barrier height, resulting in 10 times larger current. Additionally, the deep level traps (Z_1/2 and RD_1/2) were revealed by deep level transient spectroscopy (DLTS) measurement in four MPS diodes. Based on DLTS results, the trap energy levels were found to be shallow level by 22~28% with lower barrier height It could confirm the dependence of the defect level and concentration determined by DLTS on the Schottky barrier height and may lead to incorrect results regarding deep level trap parameters with small barrier heights.

• Journal of Nutrition and Health
• /
• v.34 no.4
• /
• pp.401-408
• /
• 2001

The spontaneous frequency of genetic damage and the possible relationship of this damage to total radical-trapping antioxidant potential(TRAP) and antioxidant vitamins, including plasma levels of $\alpha$-carotene, $\beta$-carotene, cryptoxanthin, retinol, $\alpha$-tocopherol and ${\gamma}$-tocopherol in humans were investigated in 57 subjects using two indices of genetic damage, SCE & HFC frequency. The mean of SCE and HFC frequencies were weakly correlated with plasma TRAP(r=-0.305, p<0.1 for SCEs: r=-0.297, p<0.1 for HFCs, respectively), but those were strongly negatively correlated with plasma $\beta$-carotence(r=-0.385, p<0.01 for SCEs : r=-0.392, p<0.01 for HFCs) and cryptoxanthin(r=-0.312, p<0.05 for SCEs : r=0.335, p<0.05 for HFCs, respectively) levels in the subjects. However, those DNA damage markers including SCE and HFC did not correlate with either plasma $\alpha$-carotene, $\alpha$-tocopherol or retinol concentrations. The mean of SCE and HFC frequencies were positively correlated with plasma ${\gamma}$-tocopherol level(r=0.421, p<0.01 for SCEs : r=0.399, p<0.01 for HFCs, respectively). These findings indicate that increased cytogenetic DNA changes, as determined by SCE and HFC frequencies are possibly associated with generation of free radicals in lymphocytes and decreased plasma antioxidant vitamin($\beta$-carotene and cryptoxanthin) status in the subjects. (Korean J Nutrition 34(4) : 401~08, 2001)

• Journal of Nutrition and Health
• /
• v.33 no.3
• /
• pp.289-295
• /
• 2000

In the present work we investigated the effect of regular physical exercise on the activities of erythrocyte antioxidant enzyme, plasma total radical-trapping antioxidant potential(TRAP) and plasma level of lipid peroxidation(malondialdehyde, MDA) in 64 healthy male, aged 34-67 years. The study population were divided in two groups: small amount of exerciser(exercise time less than 10min/d) and moderate amount of exerciser(exercise time more than 20min/d) according to their physical exercise habits measured by a questionnaire. Erythrocyte superoxide dismutase(SOD), glutathione peroxidase(GSH-Px) and catalase(CAT), plasma TRAP, as well as plasma MDA were determined. Erythrocyte GSH-Px and plasma TRAP were higher in moderate amount of exercisers than those in small amount of exercisers by 17% and 26%, respectively. No significant differences were observed in erythrocyte SOD, CAT and plasma MDA between the two groups. Mean exercise time was positively correlated with the erythrocyte GSH-Px activity and plasma TRAP significantly. The results would sugest that regular moderate exercise enhances antioxidant defences against reactive oxygen species and may increase the likelihood of a healthier life span.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.421-422
• /
• 2013

Recently, ZnO has received attentionbecause of its applications in optoelectronics and spintronics. In order to investigate deep level defects in ZnO, we used N-doped ZnO with various of the N-doping concentration. which are reference samples (undoped ZnO), 27%, 49%, and 88%-doped ZnO. Photoinduced current transient spectroscopy (PICTS) measurement was carried out to find deep level traps in high resistive ZnO:N. In reference ZnO sample, a deep trap was found to located at 0.31 (as denoted as the CO trap) eV below conduction band edge. And the CN1 and CN2 traps were located at 0.09, at 0.17 eV below conduction band edge, respectively. In the case of both annealed samples at 200 and $300^{\circ}C$, the defect density of the CO trap increases and then decreases with an increase of N-doping concentration. On the other hands, the density of CN traps has little change according to an increase of N-doping concentration in the annealed sample at $300^{\circ}C$. According to the result of PICTS measurement for different N-doping concentration, we suggest that the CO trap could be controled by N-doping and the CN traps be stabilized by thermal annealing at $300^{\circ}C$.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.2
• /
• pp.123-126
• /
• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Korean journal of applied entomology
• /
• v.43 no.1
• /
• pp.49-54
• /
• 2004

The oriental tobacco budworm, Helicoverpa assulta (Guenee) is a major pest of red pepper in Korea. Insecticide spray is a prevalent control tactic in most farms, but an effective control is difficult because the larvae are protected inside the fruit. Objective of this study was to investigate the seasonal occurrence of the male moths using pheromone trap and to evaluate the control efficacy of insecticide applications based on the trap catch data at red pepper fields in Suwon. The results of pheromone trap catch during three years showed that the moth flight activity occurred from late May to early October. Peak periods of the adult flight, which are indicators of each generation, occurred in late June, late July-early August, and late August-early September. Trap catches during the overwintering and first adult generation were closely linked with subsequent damage. Although the trap catch during the second generation was higher than the previous generations, damage level caused by this generation larvae was low. Experiment results revealed that fruit damage by H. assulta could be effectively reduced by five sprays of insecticides based on the trap catch data throughout the season.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.52 no.4
• /
• pp.56-61
• /
• 2015

Ideal and stretch-out C-V curve were shown at high frequency using SiGe p-FinFET simulation. Average interface trap density can be extracted by the difference of voltage axis on ideal and stretch-out C-V curve. Also, interface trap density(Dit) was extracted by Terman's method that uses the same stretch-out of C-V curve with interface trap characteristic, and average interface trap density was calculated at same energy level. Comparing the average interface trap density, which was found by method using difference of voltage, with Terman's method, it was verified that the two methods almost had the same average interface trap density.

• The Journal of the Acoustical Society of Korea
• /
• v.10 no.3
• /
• pp.19-30
• /
• 1991

The surface properties such as energy gap, exciton, shallow trap level, deep trap level, type inversion with annealing and metastable state of $EL_2$ level of SI GaAs wafers and the conductivity distribution of 2 inch Cr doped GaAs wafer were investigated using nondestructive TAV(transverse acoustoelectric voltage) technique. The TAV is generated when SAW and semiconductor interact. We also have tried newly SAW oscillator technique to investigate the surface properties of semiconductor wafers and we have shown the validity of this technique.