• Title/Summary/Keyword: Transparent Target

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Continuous Photolithography by Roll-Type Mask and Applications (롤타입 마스크를 이용한 연속 포토리소그래피 기술과 그 응용)

  • Kwak, Moon-Kyu
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.36 no.10
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    • pp.1011-1017
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    • 2012
  • We report the development of an optical micro-nanolithography method by using a roll-type mask. It includes phase-shift lithography and photolithography for realizing various target dimensions. For sub-wavelength resolution, a structure is achieved using the near-field exposure of a photoresist through a cylindrical phase-mask, allowing high-throughput continuous patterning. By using a film-type metal mask, continuous photolithography was achieved, and this method could be used to control the period of resultant patterns in real time by changing the rotating speed of the cylinder mask. As an application, we present the fabrication of a transparent electrode in the form of a metallic mesh by using the developed roll-type photolithography process. As a result, a transparent conductor with good properties was achieved by using a recently built cylindrical phase-shift lithography prototype, which was designed for patterning on 100-mm2 substrates.

Evolution and Maintenance of Proxy Networks for Location Transparent Mobile Agent and Formal Representation By Graph Transformation Rules

  • Kurihara, Masahito;Numazawa, Masanobu
    • Proceedings of the Korea Inteligent Information System Society Conference
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    • 2001.01a
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    • pp.151-155
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    • 2001
  • Mobile agent technology has been the subject of much attention in the last few years, mainly due to the proliferation of distributed software technologies combined with the distributed AI research field. In this paper, we present a design of communication networks of agents that cooperate with each other for forwarding messages to the specific mobile agent in order to make the overall system location transparent. In order to make the material accessible to general intelligent system researchers, we present the general ideas abstractly in terms of the graph theory. In particular, a proxy network is defined as a directed acyclic graph satisfying some structural conditions. In turns out that the definition ensures some kind of reliability of the network, in the sense that as long as at most one proxy agent is abnormal, there agent exists a communication path, from every proxy agent to the target agent, without passing through the abnormal proxy. As the basis for the implementation of this scheme, an appropriate initial proxy network is specified and the dynamic nature of the network is represented by a set of graph transformation rules. It is shown that those rules are sound, in the sense that all graphs created from the initial proxy network by zero or more applications of the rules are guaranteed to be proxy networks. Finally, we will discuss some implementation issues.

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The Effects of Oxygen Partial Pressure and Post-annealing on the Properties of ZnO-SnO2 Thin Film Transistors (ZnO-SnO2 투명박막트랜지스터의 특성에 미치는 산소분압 및 후속열처리의 영향)

  • Ma, Tae-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.4
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    • pp.304-308
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    • 2012
  • Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

ASTAS: Architecture for Scalable and Transparent Anycast Services

  • Stevens, Tim;De Leenheer, Marc;Develder, Chris;De Turck, Filip;Dhoedt, Bart;Demeester, Piet
    • Journal of Communications and Networks
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    • v.9 no.4
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    • pp.457-465
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    • 2007
  • Native information provider(IP) anycast suffers from routing scalability issues and the lack of stateful communication support. For this reason, we propose architecture for scalable and transparent anycast services(ASTAS), a proxy-based architecture that provides support for stateful anycast communications, while retaining the transparency offered by native anycast. Dynamic resource assignment for each initiated session guarantees that a connection is established with the most suitable target server, based on network and server conditions. Traffic engineering in the overlay can be realized in an effective way due to the dissemination of aggregated state information in the anycast overlay. To minimize the total deployment cost for ASTAS architectures, we propose optimized proxy placement and path finding heuristics based on look-ahead information gathered in network nodes. Contrary to a regular integer linear program(ILP) formulation, these heuristics allow to optimize proxy placement in large networks. A use case on a European reference network illustrates that lower proxy costs enable proxy deployment closer to the end-users, resulting in a reduced network load.

Electrical and Optical Properties of ZnO : Al Films Prepared by the DC Magnetron Sputtering System (직류 Magnetron Sputter 법으로 제막된 ZnO : Al 박막의 전기광학 특성)

  • 김의수;유세웅;유병석;이정훈
    • Journal of the Korean Ceramic Society
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    • v.32 no.7
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    • pp.799-808
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    • 1995
  • Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

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Properties of ITO thin films deposited by RF magnetron sputtering with process pressure (RF 마그네트론 스퍼터링법으로 제작된 ITO 박막의 공정압력 변화에 따른 특성)

  • Jeong, Seong-Jin;Kim, Deok-Kyu;Kim, Hong-Bae
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.4
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    • pp.83-86
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    • 2010
  • The transparent electrode properties of ITO films deposited by RF magnetron sputtering with process pressure were investigated. The ITO thin films was deposited on a glass substrate using a target with 3in diameter sintered at a ratio of $In_2O_3$ : $SnO_2$ (9 : 1). 200-nm-thick ITO thin films were manufactured by various process pressures ($2.0{\times}10^{-2}$, $7.0{\times}10^{-3}$ and $2.0{\times}10^{-3}$ Torr). The optical transmittance and resistivity of the deposited ITO thin films showed a relatively satisfactory result under $10^{-2}$ Torr. For high process pressure, the optical transmittance was below 80%, while for low process pressure, the optical transmittance was above 85%. As a result of of mobility, resistivity and carrier concentration by Hall measurement, we obtained satisfactory properties to apply into a transparent conducting thin film.

Properties of Indium Tin Oxide Transparent Conductive Thin Films at Various Substrate and Annealing Temperature

  • Jeong, Woon-Jo;Kim, Seong-Ku;Kim, Jong-Uk;Park, Gye-Choon;Gu, Hal-Bon
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.1
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    • pp.18-22
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    • 2002
  • ITO thin films with thickness of 3000 $\AA$ were fabricated by rf magnetron sputtering system with a 10 mol % SnO$_2$-90 mol % In$_2$O$_3$target at various substrate temperature and annealing temperature in air. And we investigated structural, electrical and optical characteristics of them. It's resistivity, carrier concentration and Hall mobility was 2$\times$10$\^$-4/ Ωcm, 7$\times$10$\^$20/∼ 9$\times$10$\^$20/ cm$\^$-3/ and 21∼23 cm$^2$/V$.$sec respectively. And it's optical transmittance and energy band gap was above 85 % in the visible range and 3.53 eV respectively.

Characteristics of ITO Transparent Conductive Oxide by DC Magnetron Sputter Methode (DC 마그네트론 스퍼터를 이용한 ITO 투명도전막 특성)

  • Cho, Ki-Taek;Choi, Hyun;Yang, Seung-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.269-269
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    • 2007
  • 최근 평판디스플레이 산업이 성장함에 따라 품질향상을 위한 연구가 활발히 진행중이며 또한, 부품 소재 개발에 박차를 가하고 있다. 대형 평판디스플레이 중 낮은 전력소모와 광시야각이 우수한 TFT-LCD가 각광받고 있다. TFT-LCD 소자의 투명전극으로 사용되기 위해서는 면저항 10~1k Ohm/sq., 광투과율 85% 이상의 특성이 요구되며 ITO(Indium Tin Oxide의 약자) 타겟을 스퍼터링한 박막이 일반적으로 사용되고 있다. 본 연구에서는 $In_2O_3$ 나노 분말 제조 공법으로 제작된 ITO 타겟을 사용하여 양산성 및 대형화에 적합한 DC 마그네트론 스퍼터 방식으로 투명전극을 제조하였다. 일반적으로 사용되는 고정식 DC 마그네트론 스퍼터 방식은 타겟표면에 재증착(back deposition)되는 저급산화물로 인해 이물 또는 노즐(Nodule) 이 형성되고 이로 인해 비이상적이고 불안정한 방전 플라즈마가 박막의 특성을 저하시킨다. 이러한 문제점을 해결하기 위해 이동식 DC 마그네트론 스퍼터 방식을 채택하였으며 대형 타겟을 이용한 대형화 기판 제작과 안정적인 sputter yield로 인해 uniformity가 우수한 ITO 박막을 제조하였다. ITO 박막의 저면저항 고투과율 특성을 구현하기 위해 공정변수인 산소분압, 전류밀도(DC power) 그리고 증착온도에 따른 ITO 박막의 미세조직과 결정성을 관찰하였으며 전기적 특성을 분석하였다.

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Synthesis and Characterization of Al-Doped Zinc Oxide Films by an Radio Frequency Magnetron Sputtering Method for Transparent Electrode Applications

  • Seo, Jae-Keun;Ko, Ki-Han;Cho, Hyung-Jun;Choi, Won-Seok;Park, Mun-Gi;Seo, Kyung-Han;Park, Young;Lim, Dong-Gun
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.1
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    • pp.29-32
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    • 2010
  • In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

Transparent TIO/Ag NW/TIO Hybrid Electrode Grown on PET for Flexible Organic Solar Cell

  • Seo, Ki-Won;Lee, Ju-Hyun;Na, Seok-In;Kim, Han-ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.394.2-394.2
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    • 2014
  • We fabricated highly transparent and flexible Ti doped In2O3 (TIO)/Ag nanowire(NW)/TIO (TAT) multilayer electrodes by linear facing target sputtering (LFTS) and brush-painting for used as flexible for anode organic solar cells(FOSCs). The characteristics of TAT transparent anode as a function of number of brush-painting cycles was also investigated. At optimized conditions we achieved highly flexible TAT multilayer electrodes with a low sheet resistance of $9.01{\Omega}/square$ and a high diffusive transmittance more than 80% in visible region as well as superior mechanical stability. The effective embedment of the Ag NW network between top and bottom TIO films led to a metallic conductivity, high transparency. Based on FE-SEM HRTEM, and XRD analysis, we can find that the Ag NW network was effectively embedded between top and bottom TIO layers due to good flexibility of Ag NW, the TAT multilayer showed superior flexibility than single TIO layer. Successful operation of FOSCs with high power conversion efficiency of 3.01% indicates that TAT hybrid electrode is a promising alternative to conventional ITO electrode for high performance FOSCs.

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