Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Effects of Oxygen Partial Pressure and Post-annealing on the Properties of ZnO-SnO2 Thin Film Transistors

ZnO-SnO2 투명박막트랜지스터의 특성에 미치는 산소분압 및 후속열처리의 영향

  • Ma, Tae-Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
  • 마대영 (경상대학교 전기공학과 및 공학연구원)
  • Received : 2012.03.13
  • Accepted : 2012.03.21
  • Published : 2012.04.01
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Abstract

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

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References

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