• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.623-625
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• 2000

For the finite element analysis of highly saturated rotating machines involving rotation of a rotor such as dynamic analysis. cogging torque analysis and etc, so much time is needed because a new system matrix equation should be solved for each iteration and time step. It is proved in this paper that. in linear systems. the computational time can be greatly reduced by using the domain decomposition method (DDM). In nonlinear systems. however. this advantage vanishes because the stiffness matrix changes at each iteration especially when using the Newton-Raphson (NR) method. The transmission line modeling (TLM) method resolves this problem because in TLM method the stiffness matrix does not change throughout the entire analysis. In this paper, a new technique for FEA of rotating machines including rotation of rotor and non-linearity is proposed. This method is applied to a test problem. and compared with the conventional method.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.265.1-265.1
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• 2016

여러 application에 적용하기 위하여 p-type SnO 박막과 전극 간의 접촉 저항을 분석이 필요하였다. 이를 Transmission Line Method(TLM) 패턴 소자를 제작한 후 전기적 특성을 분석함으로써 알 수 있었다. $Si/SiO_2$ 기판에 Reactive Magnetron Sputtering법을 이용하여 c축 우선 배향된 SnO를 100nm 증착하고 photolithography 공정을 통해 전극을 패턴화하여 100nm 두께로 증착하였다. 전극 간 거리는 1, 2, 4, 8, 16, 32, 64, 128, 256, 512, $1024{\mu}m$로 각각 2배씩 증가하는 패턴이고 폭 W는 $300{\mu}m$ 이다. p-type SnO 의 경우, work function이 4.8eV이기 때문에 전극과 ohmic contact이 되기 위해서는 4.8eV보다 높은 work function 값을 가지는 전극이 필요하였다. 이 조건과 맞는 후보로 Ni(5.15eV), ITO(5.3eV)를 설정한 후 소자를 제작하였다. 제작된 소자는 열처리 하지 않은 소자와 Rapid Thermal Annealing(RTA) 장비에서 $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$에서 각각 1분씩 열처리한 소자의 특성을 분석하였다. 열처리 하지 않은 소자의 경우 Ni 전극의 specific contact resistance는 $3.42E-2{\Omega}$의 값을 나타내었고, ITO의 경우 $3.62E-2{\Omega}$값을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.546-549
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• 2009

In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

• ETRI Journal
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• v.34 no.4
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• pp.536-541
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• 2012

This paper aims to extend the transmission line matrix method with a hybrid symmetrical condensed node (HSCN) to model ferrite media in the time domain. To take into account the anisotropy and dispersive properties of ferrite media, equivalent current sources are incorporated into supplementary stubs of the original HSCN. The scattering matrix of the proposed HSCN is provided, and the validity of this approach is demonstrated for both transversely and longitudinally magnetized ferrites. Agreement is achieved between the results of this approach and those of the theoretical and the finite-difference time-domain method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.170-178
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• 2010

In this paper, we propose the modeling of the power/ground plane which includes complex dielectric permittivity and loss tangent for the power/ground coupled noise. In order to estimate the effects of the dielectric substrate for the coupled noise, we used full-wave simulators, HFSS(High Frequency Structure Simulation) and MWS(MicroWave Studio). The simulated results for the commercial substrates are compared with the measured values. TLM(Transmission Line Method) was used for the calculation of power plane impedance using Debye model which depicts the dielectric loss of PCB. Finally, impedance from proposed circuit model showed very good coincidence to the measured data.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.449-454
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• 2002

The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

• Proceedings of the KSR Conference
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• 2009.05b
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• pp.403-406
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• 2009

Recently, electricity is essential for human lives. Modem people take cultural benefits due to the development of the electric power system and the spread of the high tech-electric appliances, the cell phones, and etc. However, the electromagnetic field problems become prominent figures owing to the fault of the communication devices around the power line and the biological effect, and etc. In this paper, we introduce the simple electromagnetic field calculation based on the transmission line matrix method, prior to the analysis about the influence of electromagnetic field. Simulation object is the inner part of the trailer car in the high speed train. Unlike the existing paper we submitted, we analyze not only the magnetic field but the electric field in the inner part of the trailer car which makes up the high speed train.

• Journal of information and communication convergence engineering
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• v.8 no.2
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• pp.163-167
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• 2010

In underwater acoustic communication, acoustic signals from transducers or hydrophones are used. And the underwater acoustic communication channels are very complicated, because of vertical distribution of acoustic velocity according depths, and reflections from boundaries like as surface or bottom. For the implementation of the underwater acoustic communication channel, the image method or ray tracing method have been used. In this paper, we introduce a new approach for implementation of underwater acoustic communication channel using the simulation of the Transmission Line Matrix Modeling and cross-correlations from the input and output signals.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.73-77
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• 2002

Characteristics of Cu/Si/Cu ohmic contacts to n-type 4H-SiC were investigated systematically. The ohmic contacts were formed by rf sputtering of multi layer Cu/Si/Cu sputtered sequentially. The annealings were peformed With 2-Step using RTP in vacuum ambient. The specific contact resistivity($\rho$c), sheet resistance(Rs), contact resistance(Rc), transfer length(L$_{T}$) were calculated from resistance(R$_{T}$) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. Best results were obtained for a sample annealed at vacuum as $\rho$c = 1.0x10$^{-6}$ $\Omega$$\textrm{cm}^2$, Rc = 2$\Omega$ and L$_{T}$ = 1${\mu}{\textrm}{m}$. The physical properties of contacts were examined using XRO and AES. The results showed that copper silicide was formed on SiC and Cu was migrated into SiC.o SiC.