• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.280.1-280.1
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• 2016

Generally InGaN/GaN green light emitting diode (LED) exhibits the low quantum efficiency (QE) due to the large lattice mismatch between InGaN and GaN. The QE of InGaN-based multiple quantum wells (MQWs) is drastically decreased when an emission wavelength shifts from blue to green wavelength, so called "green gap". The "green gap" has been explained by quantum confined Stark effect (QCSE) caused by a large lattice mismatch. In order to improve the QE of green LED, undoped graded short-period InGaN/GaN superlattice (GSL) and Si-doped GSL (SiGSL) structures below the 5-period InGaN/GaN MQWs were grown on the patterned sapphire substrates. The luminescence properties of InGaN/GaN green LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensity of SiGSL sample measured at 10 K shows stronger about 1.3 times compared to that of undoped GSL sample, and the PL peak wavelength at 10 K appears at 532 and 525 nm for SiGSL and undoped GSL, respectively. Furthermore, the PL decay of SiGSL measured at 10 K becomes faster than that of undoped GSL. The faster decay for SiGSL is attributed to the increased wavefunction overlap between electron and hole due to the screening of piezoelectric field by doped carriers. These PL and TRPL results indicate that the QE of InGaN/GaN green LED with GSL structure can be improved by Si-doping.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.92-97
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• 2013

The luminescence properties of InAs/GaAs quantum dots (QDs) grown by a migration enhanced epitaxy method have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The MEE method supplies materials in a series of alternate depositions with migration enhancing time between each deposition. After In source was supplied for 9.3 s, the growth was interrupted for 5 s. Subsequently, As source was open for 3 (AT3), 4(AT4), 6 (AT6), or 9 s (AT9), and the growth was interrupted for 5 s again. This growth sequence was repeated 3 times for the growth of InAs QDs. The PL peak of the AT3 was 1,140 nm and the PL intensity was very weak compared with that of the other three samples. The PL peak of all samples except the AT3 sample was 1,118 nm, which is blueshifted from 1,140 nm, and the PL intensity was increased compared to that of the AT3. These results can be explained by the increased QD density and the improved QD uniformity. The AT6 sample showed the strongest PL intensity and the narrowest full width at half maximum. The PL decay time of AT6 increased with increasing emission wavelength from 940 to 1,126 nm, reaching a maximum decay time of 1.09 ns at 1,126 nm, and then decreased as the emission wavelength was increased further.

• Applied Science and Convergence Technology
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• v.24 no.1
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• pp.22-26
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• 2015

The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various temperatures from $400^{\circ}C$ to $490^{\circ}C$ have been investigated by using temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements. The PL peak energy for SPS samples decreases as the growth temperature increases. The decreased PL energy of ~10 meV for the sample grown at $425^{\circ}C$ compared to that for $400^{\circ}C$-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at $460^{\circ}C$ and $490^{\circ}C$ exhibit the significant reduction of the PL peak energies due to the combined effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering. The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures can be controlled by varying growth temperature, leading to LCM formation and CuPt-B type ordering.

• Biomolecules & Therapeutics
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• v.19 no.1
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• pp.1-8
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• 2011

G-protein coupled receptors (GPCRs) constitute an important class of drug targets and are involved in every aspect of human physiology including sleep regulation, blood pressure, mood, food intake, perception of pain, control of cancer growth, and immune response. Radiometric assays have been the classic method used during the search for potential therapeutics acting at various GPCRs for most GPCR-based drug discovery research programs. An increasing number of diverse small molecules, together with novel GPCR targets identified from genomics efforts, necessitates the use of high-throughput assays with a good sensitivity and specificity. Currently, a wide array of high-throughput tools for research on GPCRs is available and can be used to study receptor-ligand interaction, receptor driven functional response, receptor-receptor interaction,and receptor internalization. Many of the assay technologies are based on luminescence or fluorescence and can be easily applied in cell based models to reduce gaps between in vitro and in vivo studies for drug discovery processes. Especially, cell based models for GPCR can be efficiently employed to deconvolute the integrated information concerning the ligand-receptor-function axis obtained from label-free detection technology. This review covers various platform technologies used for the research of GPCRs, concentrating on the principal, non-radiometric homogeneous assay technologies. As current technology is rapidly advancing, the combination of probe chemistry, optical instruments, and GPCR biology will provide us with many new technologies to apply in the future.

• Bulletin of the Korean Chemical Society
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• v.23 no.8
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• pp.1111-1115
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• 2002

The photoluminescence of calixarene crystals has been studied as functions of temperature, time, and concentration. The vibronic bands shift to longer wavelength and become significantly sharper as temperature decreases. The experimental results r eveal that the structural transformation occur during the annealing process. Time-resolved spectra of calixarene at 12 K are monitored. Spectral features, which demonstrate characteristic of energy transfer processes, are not observed. The depopulation of excited state density is mainly controlled by unimolecular decay process dominating other decay processes. The lifetime was found to be 2.6 $\pm$ 0.1 ns. For the case of calixarene mixed with naphthalene, the fluorescence spectrum shows that the band centered at 340 nm lies 2840 $cm^{-1}$ below the relatively broad 310 nm band found for calixarene crystals. The spectra also exhibit that the emission intensity increases with increasing calixarene concentration. The results are evident that the calixarene emission is quenched by the naphthalene. Phosphorescence of calixarene mixed with naphthalene crystals is observed to determine whether the emission is due to naphthalene. The phosphorescence peaks were compared with the ground-state vibrational frequencies of naphthalene and found to be in good agreement. The results indicate that inter-molecular energy transfer occurs between calixarene and naphthalene.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.1
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• pp.1-6
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• 2001

We measured the simultaneous, time-resolved spectra of photon emission, electron emission, and frictional force during the abrasion single crystal MgO with a diamond stylus in vacuum. phE and EE signal can be detected with millisecond resolution during the wear of a single crystal MgO substrate with a diamond stylus. The emissions and wear behavior are strong function of surface condition, load and stylus velocity. Measurement on annealed vs as-received material show that the luminescence is primarily due to deformation, and the electron emission is primarily due to fracture. These emissions provide insight into the processes responsible for catastrophic failure of ceramics in wear applications.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.20 no.4
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• pp.371-382
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• 2022

Carbonates are inorganic ligands that are abundant in natural groundwater. They strongly influence radionuclide mobility by forming strong complexes, thereby increasing solubility and reducing soil absorption rates. We characterized the spectroscopic properties of Am(III)-carbonate species using UV-Vis absorption and time-resolved laser-induced fluorescence spectroscopy. The deconvoluted absorption spectra of aqueous Am(CO₃)₂^- and Am(CO₃)₃^3- species were identified at red-shifted positions with lower molar absorption coefficients compared to the absorption spectrum of aqua Am³⁺. The luminescence spectrum of Am(CO₃)₃^3- was red-shifted from 688 nm for Am³⁺ to 695 nm with enhanced intensity and an extended lifetime. Colloidal Am(III)-carbonate compounds exhibited absorption at approximately 506 nm but had non-luminescent properties. Slow formation of colloidal particles was monitored based on the absorption spectral changes over the sample aging time. The experimental results showed that the solubility of Am(III) in carbonate solutions was higher than the predicted values from the thermodynamic constants in OECD-NEA reviews. These results emphasize the importance of kinetic parameters as well as thermodynamic constants to predict radionuclide migration. The identified spectroscopic properties of Am(III)-carbonate species enable monitoring time-dependent species evolution in addition to determining the thermodynamics of Am(III) in carbonate systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.342-347
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• 2012

The optical properties of InAs quantum dots (QDs) grown on a GaAs substrates by migration enhanced molecular beam epitaxy method have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The luminescence properties of InAs/GaAs QDs have been studied as functions of temperature, excitation laser power, and emission wavelength. The PL peak of InAs QDs capped with $In_{0.15}Ga_{0.85}As$ layer (QD2) measured at 10 K is redshifted about 80 nm compared with that of InAs QDs with no InGaAs layer (QD1). This redshift of QD2 is attributed to the increase in dot size due to the diffusion of In from the InGaAs capping layer. The PL decay times of QD1 and QD2 at 10 K are 1.12 and 1.00 ns taken at the PL peak of 1,117 and 1,197 nm, respectively. The reduced decay time of QD2 can be explained by the improved carrier confinement and enhanced wave function overlap due to increased QD size. The PL decay times for both QD1 and QD2 are independent on the emission wavelength, indicating the uniformity of dot size.

• Analytical Science and Technology
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• v.24 no.6
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• pp.451-459
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• 2011

Eight coordinated terbium(III) complexes, tris (2-pyrazinecarboxylato)(phenanthroline) terbium(III) [$Tb(pzc)_3$(phen)], tris (5-methyl-2-pyrazinecarboxylato) (phenanthroline) terbium(III) [$Tb(mpzc)_3$(phen)] and tris(2-picolinato) (phenanthroline) terbium(III) [$Tb(pic)_3$(phen)], have been synthesized and characterized by Fourier transform infrared (FT-IR), UV-Visible and X-ray photoelectron spectroscopy. Photoluminescence (PL) spectroscopy shows that these complexes emitted strong green luminescence. When powder samples of the $Tb^{3+}$ complexes are examined using time-resolved spectroscopic analysis, the luminescence lifetimes are found to be 0.87 ms and 1.0 ms, respectively. Thermogravimetric analysis reveals the terbium complexes to have good thermal stability up to $333-379^{\circ}C$. Cyclic voltammetry shows that HOMO-LUMO energy gap of the $Tb^{3+}$ complexes ranges from 4.26~4.41 eV. These values are similar to those obtained from the UV-visible spectra. Overall, the synthesized $Tb^{3+}$ complexes may be useful advanced materials for green light emitting devices.