• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• 한국환경과학회지
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• 제23권6호
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• pp.1151-1156
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• 2014

The photocatalytic decomposition characteristics of single n-pentane, n-pentane mixed with methyl ethyl ketone (MEK), and n-pentane mixed with ethyl acetate (EA) by cylindrical UV reactor installed with $TiO_2$-coated perforated plane were studied. The effects of the residence time, the inlet gas concentration, and the oxygen concentration were investigated. The removal efficiency of n-pentane was increased with increasing the residence time and the oxygen concentration, but decreased with increasing the inlet concentration of n-pentane. The photocatalytic decomposition rates of single n-pentane, n-pentane mixed with MEK, and n-pentane mixed with EA fitted well on Langmuir-Hinshelwood kinetics equation. The maximum elimination capacities of single n-pentane, n-pentane mixed with MEK, and n-pentane mixed with EA were obtained to be $465g/m^3{\cdot}day$, $217g/m^3{\cdot}day$, and $320g/m^3{\cdot}day$, respectively. The presence of coexisting MEK and EA vapor had a negative effect on the photocatalytic decomposition of n-pentane and the negative effect of MEK was higher than that of EA.

• 자원리싸이클링
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• 제7권4호
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• pp.22-26
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• 1998

M-type Ba-ferrite(${BaFe}_{12-2X}{Ti}_{X}{Co}_{X}{O}_{19}$)의 ${Fe}^{3+}$ 이온 대신에 A이온의 위치에는 비자성 이온인 ${Ti}^{4+}$을, Me이온은 위치에는 ${Co}^{2+}$을 치환시켜 치환량 x의 변화에 따른 결정자기이방성 감소를 관찰하고, 고주파 대역에서 전파흡수재로서 사용가능 여부를 실험하였다. 치환결과 보자력은 결정자기이방성이 감소함에 따라 급격히 감소하는 경향을 보였으며, 포화자화값은 ${Fe}^{3+}$이온 대신에 비자성인 ${Ti}^{4+}$이온이 치환됨에 따라 거의 직선적으로 감소하였다. 특히, 치환량이 1.2일 때 보자력은 185 Oe로 가장 낮았고, 포화자화는 43.5emu/g의 값을 나타내었다. 반사손실을 계산한 결가 Ti-Co 치환량 0.8일 때 2mm흡수체의 경우 10~16㎓의 대역에서 반사손실-10㏈(90%흡수)이하였으며, 감쇠능의 측정결과 12~16㎓의 대역에서 20㏈(99% 감쇠)로 12~16㎓의 고주파 대역에서 전파흡수재로 사용이 가능함을 예측할 수 있었다.

• 수산해양교육연구
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• 제19권1호
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• pp.1-7
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• 2007

The purpose of this study was to investigate geochemical characteristics of surface sediments in the Keum river estuary adjacent to coastal area. For this study we collected the 21 surface sediments samples. Mean size of surface samples was $3.24{\sim}6.65{\phi}$ on inner estuary and was $2.15{\sim}3.42{\phi}$ on outside estuary. Surface samples were composed of silt on inner estuary and were composed of sand which was more larger than $4{\phi}$ on outside estuary. Most major elements except CaO, $Na_2O$ showed good relationships between variation of contents and grain size. Contents of $Al_2O_3$, $Fe_2O_3$, MgO, $K_2O$, $TiO_2$, $P_2O_5$ and $M_nO$ were increased predominately owing to the variation of mean size of surface samples. Contents of Co, Cr, Cu, Li, Sr, Zn, La, Ce, Pb, Rb, Nd have a good relationships with grain size but Ba, Th, Sm have not. All of major and minor elements contents except $K_2O$ and Ba were less than world mean contents of shallow surface sediments but apprehend a high pollution possibility on silt sediments in the estuaries.

• 한국세라믹학회지
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• 제37권7호
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• pp.665-672
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• 2000

The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

• 한국세라믹학회지
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• 제39권4호
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• pp.386-393
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• 2002

본 연구는 티탄산칼륨 섬유(K2O·$nTiO_2$)를 제조한 후, 도전율이 우수한 Sb-doped $SnO_2$(ATO: Antimony Tin Oxide)를 티탄산 칼륨 섬유에 코팅하는 기술을 개발하는데 목적이 있다. 티탄산칼륨 섬유는 서냉 소성법으로 제조하였으며 섬유의 평균 길이는 $15{\mu}m$, 평균 직경은 $0.5{\mu}m$이었다. ATO를 졸-겔법, 공침법, 균일침전법등 세가지 방법으로 티탄산칼륨 섬유에 코팅 하였으며 ATO 코팅된 티탄산칼륨 섬유는 ATO 함량(5∼70 wt%), Sb 함량(0∼20 wt%), 온도($450∼800^{\circ}C$), 수세 여부 및 회수(3∼4회) 등을 변화 시키며 비저항 변화를 관찰하였다. 공침법의 경우 ATO 함량이 30wt%에서 103${\Omega}$·cm 낮은 비저항을 나타내었으며, 그 이상의 함량에서는 거의 일정한 값($60{\Omega}{\cdot}cm∼90{\Omega}{\cdot}$cm)을 보였다.

• 한국재료학회지
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• 제14권11호
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• pp.764-768
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• 2004

Perovskite Pb(Mn_{1/3}Sbu_{2/3})O_2-Pb(Zr,Ti)O_3\;(PMS-PZT) was prepared and ZnO doping effects on its piezoelectric properties were investigated. Pyrochlore phase was not identified in the PMS-PZT ceramics with $0\sim5\;mol\%$ ZnO sintered at $1100^{\circ}C$ for 2 hrs, and maximum sintered density of $7.92 g/cm^3$ was obtained. Piezoelectric charge constant and voltage constant increased to $359{\times}10^{-12}\;C/N\;and\;22.5{\times}10^{-13}\;Vm/N$, respectively, with increasing ZnO content. Mechanical quality factor reduced considerably with increasing ZnO content. When the ZnO content was 3 $mol\%$, electromechanical coupling factor and relative dielectric constant showed maximum values of $56\%$ and 1727, respectively. This should be evaluated by complicated variations of sintered density, tetragonality of lattice, grain size, and A-site vacancy generated by ZnO addition and $Zn^{2+}$ substitution.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• 센서학회지
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• 제7권3호
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• pp.188-196
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• 1998

$WO_{3}$계 n-형 반도체 가스센서의 검지특성 및 전기적 특성을 조사하였다. 공기중에서 결합제가 첨가되지 않은 $WO_{3}:TiO_{2}$(4 wt. %) 센서의 낱알경계에서의 전위장벽의 크기는 0.26 V로 나타났으며, 결합제로서 $Al_{2}O_{3}$, PVA (polyvinyl alcohol ), silica sol이 첨가된 센서의 경우는 전위장벽이 각각 0.17, 0.22, 0.26 V로 관측되었다. 이들 시료를 $NO_{x}$가 120 ppm 첨가된 분위기에 노출시켰을 때, 결합제가 첨가되지 않은 센서의 경우는 낱알경계에서의 전위장벽이 0.59 V로 증가하였으며, 결합제로서 $Al_{2}O_{3}$, PVA, silica sol이 첨가된 경우는 전위장벽이 각각 0.43, 0.66, 0.52 V로 나타나, PVA가 첨가된 센서에서 전위장벽의 변화가 가장 높아 감도가 우수하게 되는 것을 알 수가 있었다. 한편 센서 최적 작동온도 이상의 온도에서 나타나는 감도의 감소는 흡착가스 입자의 탈착보다는 공기중에서 다결정이 보이는 저항의 온도 의존성에 따라 나타남이 판명되었다. 또한 결합제가 첨가되지 않은 센서와 결합제로서 Pt가 첨가된 센서의 경우, CO가 250 ppm 존재할 때까지도 전위장벽의 크기가 약 0.2 V로 공기중에서와 비슷한 크기를 나타내어, CO와 $NO_{x}$가 혼합된 분위기에서 $NO_{x}$만을 선택적으로 검지하는데 유리함이 밝혀졌다.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.109-112
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• 2004

In this study, in order to develop the low temperature sintering ceramics for ultrasonic vibrator, Pb(Sb$\_$$\frac{1}{2}$/Nb$\_$$\frac{1}{2}$/) O$_3$-Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$-Pb(Zr$\_$0.48/Ti$\_$0.52/)O$_3$ ceramics were manufactured as a function of the amount of CuO addition, and their dielectric and piezoelectric characteristics were investigated. With increasing CuO addition, the grain size and density increased up to 0.3 wt% CuO addition. Taking into consideration electromechanical coupling factor(k$\_$p/) of 0.53, mechanical quality factor(Q$\_$m/) of 423, dielectric constant($\varepsilon$$\_$r/) of 1,759 and piezoelectric constant(d$\_$33/) of 362pC/N, it could be concluded that 0.5 wt% CuO added composition ceramic sintered at 920$^{\circ}C$ was suitable for ultrasonic vibrator application.