• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.243-246
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• 1998

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The structural, dielectric and electrical properties of BST thin films were investigated with Ar/O$_2$ ratio. Dielectric constant and dielectric loss of the BST thin film were about 1020 and 2.0[%], respectively. (at RF power 80W, post annealing temperature $650^{\circ}C$, deposition pressure of 5mTorr and Ar/O$_2$=80/20). For the BST(Ar/O$_2$=80/20) thin film with Polarization switching cycles of 10$^{10}$ , remanent polarization and coercive field were 0.084[$\mu$C/cm$^2$], 1.954[kV/cm], respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.31-34
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• 2006

In this study, $(Ba_{0.7}\;Sr_{0.3})TiO_3$ was coated on Pt/Ti/$SiO_2$/Si wafer by using Sol-Gel method. Coating process was repeated 3~5 times and then sintered at 750[$^{\circ}C$] for 1 hour. Each specimen was analyzed structure and electrical characteristics. In structure characteristics, EDX analyzed the samples ratio of the formation on the structural property. Thermal behavior was observed with TG-DTA and concluded that the heat-treatment of the samples was degreed 750[$^{\circ}C$]. Surface and section of thin films were observed with SEM.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.105-108
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• 2005

The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.526-530
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.

• Bulletin of the Korean Chemical Society
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• 제26권2호
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• pp.233-237
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• 2005

Cyclopentadiene compounds, 2-[CR'R(OMe)]-1,3-Me$_2C_5H_3$ (R, R' = 2,2'-biphenyl, 2) and 2-[CR'R(OSiMe$_3$)]-1,3-Me$_2C_5H_3$ (R, R' = 2,2'-biphenyl, 3; R = ph, R' = ph, 4; R = 2-naphthyl, R' = H, 5) are readily synthesized from 2-bromo-3-methoxy-1,3-dimethylcyclopentene (1). Reaction of the cyclopentadienes with Ti(NMe$_2$)$_4$ in toluene results in clean formation of the cyclopentadienyl tris(dimethylamido)titanium complexes, which are transformed to the trichloride complexes, 2-[CR'R(OMe)]-1,3-Me$_2C_5H_2$}TiCl$_3$ (R, R' = 2,2'-biphenyl, 6) and {2-[CR'R(OSiMe$_3$)]-1,3-Me$_2C_5H_2$}TiCl$_3$ (R, R' = 2,2'-biphenyl, 7; R = ph, R' = ph, 8; R = 2-naphthyl, R' = H, 9). Attempts to form C1-bridged Cp/oxido complexes by elimination of MeCl or Me$_3$SiCl were not successful. X-ray structures of 6, 7 and an intermediate complex {2-[Ph$_2$C(OSiMe$_3$)]-1,3-Me$_2C_5H_2$}TiCl$_2$(NMe$_2$) (10) were determined.

• 자연과학논문집
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• 제8권1호
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• pp.53-59
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• 1995

Alumina 세라믹스의 기계적 물성 증진을 위하여 SiC whisker로 강화시키고 소결 조제 및 소결 온도의 영향을 고찰하였다. Whiker의 소결억제 효과로 인하여 고상소결을 촉진하는 MgO나 $TiO_2$를 소결조제로 사용한 경우에서는 치밀한 소결체를 얻을 수 없었으나, 액상을 형성하는 $Y_2O_3$를 2wt% 첨가한 경우에 양호한 소결밀도를 얻을 수 있었다. whisker 첨가에 의한 기지의 기계적 물성의 증진 효과도 함께 얻을 수 있었다. 강화 효과는 보강재인 whiker 자체의 보강 효과와 함께 입성장 억제 효과가 복합적으로 작용한 것으로 판단되었다. 소결체를 HIP 처리한 경우에는 거의 이론 밀도까지 이르는 아주 치밀한 소결체의 제조가 가능하였으며, 기계적 물성은 상압소결 후의 결과에 비하여 향상됨을 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.655-659
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• 2010

Nanoporous titanium dioxide ($TiO_2$) is very attractive material for various applications due to the high surface to volume ratio. In this study, we have fabricated nanoporous $TiO_2$ thin films on Si by anodic oxidation. 500-nm-thick titanium (Ti) films were deposited on Si by using electron beam evaporation. Nanoporous structures in the Ti films were obtained by anodic oxidization using ethylene glycol electrolytes containing 0.3 wt% $NH_4F$ and 2 vol% $H_2O$ under an applied bias of 5 V. The diameter of nanopores in the Ti films linearly increased with anodization time and the whole Ti layer could become nanoporous after anodizing for 3 hours, resulting in vertically aligned nanotubes with the length of 200~300 nm and the diameter of 50~80 nm. Upon annealing at $600^{\circ}C$ in air, the anodized Ti films were fully crystallized to $TiO_2$ of rutile and anatase phases. We believe that our method to fabricate nanoporous $TiO_2$ films on Si is promising for applications to thin-film gas sensors and thin-film photovoltaics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1488-1490
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• 1997

$(Pb_{1-x}La_x)Ti_{1-x/4}O_3$ (x=0, 0.02, 0.04, 0.06, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb,La)$TiO_3$ with excess Pb 10mol% was made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate at 4000rpm for 30 seconds. Coated specimens were dried on the hot-plate at $350^{\circ}C$ for 10 min and sintered at $500{\sim}750^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6 at.%) thin films sintered at $650^{\circ}C$ were 884, $13.95{\mu}C/cm^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were $3.2{\times}10^{-8}\;C/cm^2K$, $1.02{\times}10^{-8}\;C{\cdot}cm/J$, $2.9{\times}10^{-11}\;C{\cdot}cm/J$, $0.29{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• 한국세라믹학회지
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• 제28권5호
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• pp.406-414
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• 1991

The composition of base glass was selected as MgO 8, Al2O3 24, SiO2 68 in weight percent. TiO2 and ZrO2 were added to the base glass to investigate their effects as nucleating agents. In the case of ZrO2 addition, the optimum temperature for nucleation, which was related to the precipitation of tetragonal ZrO2, was 80$0^{\circ}C$. The optimum growth condition for the crystal was 87$0^{\circ}C$ for 8 hrs, and the major crystal phases precipitated in the samples were $\beta$-quartz ss. and mullite. The light transmissivity turned out to be around 80 per cent. On the other hand, when the TiO2 was added, it was difficult to determine the nucleating temperature, because the samples turned easily into translucency during the heat treatment. Therefore, it was almost impossible to retain transparency in the samples. The light transmissivity was below 30 per cent.

• Journal of Ceramic Processing Research
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• 제19권6호
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• pp.483-491
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• 2018

Effects of additives on phase development and physico-mechanical properties of mullite-carbon was investigated. Powdered clay, kaolinite and graphite of predetermined compositions were blended with additives using ball mill for 3 hrs at 60 rev/min. Samples were produced by uniaxial compression and sintered between $1400^{\circ}C$ and $1600^{\circ}C$ for one hr. They were characterized for various properties, developed phases and microstructural features. It was observed that the properties and phase developments in the samples were influenced by the additives. 10 wt % SiC served as nucleating point for SiC around $1400^{\circ}C$. 10wt % $TiO_2$ lead to development of 2.5 wt % TiC at $1500^{\circ}C$ which increased to 6.8 wt % at $1600^{\circ}C$. Ifon clay in the sample leads to development of anorthite and microcline in the samples. 10wt % $TiO_2$ is effective as anti-oxidant for graphite up to $1500^{\circ}C$. Base on strength and absorbed energy, sample C (with 10wt % $TiO_2$) sintered at $1500^{\circ}C$ is considered to be optimum.