Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Enhancement of the Ferroelectric Properties of Pb(La1Ti)O3 Thin Films with Pb(La1Ti)O3Buffers Fabricated by Pulsed Laser Deposition

PLT buffer층의 삽입에 따른 강유전 PZT박막의 특성 향상

  • 임성훈 (연세대학교 전기전자공학과) ;
  • 이은선 (연세대학교 전기전자공학과) ;
  • 정현우 (연세대학교 전기전자공학과) ;
  • 전경아 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2005.02.01
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Abstract

The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.

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References

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