• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.141-145
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• 2018

Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.427-431
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• 2020

In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga₂O₃) thin films grown by mist-CVD. A 500~800 nm-thick Ga₂O₃ film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga₂O₃ layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (I_D) exceeded 1 mA at a drain voltage (V_D) of 20 V. Electron mobility of the β-Ga₂O₃ channel was determined from maximum transconductance (g_m), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga₂O₃ thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.261-261
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• 2013

The smart design of nanocatalysts can improve the catalytic activity of transition metals on reducible oxide supports, such as titania, via strong metal-support interactions. In this work, we investigatedtwo-dimensional Pt nanoparticle/titania catalytic systems under the CO oxidation reaction. Arc plasma deposition (APD) and metal impregnation techniques were employed to achieve Pt nanoparticle deposition on titania supports, which were prepared by multitarget sputtering and sol-gel techniques. APD Pt nanoparticles with an average size of 2.7 nm were deposited on sputtered and sol-gel-prepared titania films to assess the role of the titania support on the catalytic activity of Pt under CO oxidation. In order to study the nature of the dispersed metallic phase and its effect on the activity of the catalytic CO oxidation reaction, Pt nanoparticles were deposited in varying surface coverages on sputtered titania films using arc plasma deposition. Our results show an enhanced activity of Pt nanoparticles when the nanoparticle/titania interfaces are exposed. APD Pt shows superior catalytic activity under CO oxidation, as compared to impregnated Pt nanoparticles, due to the catalytically active nature of the mild surface oxidation and the active Pt metal, suggesting that APD can be used for large-scale synthesis of active metal nanocatalysts.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.154-158
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• 2005

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method and then this LB monolayer is inserted between two metal electrodes. According to the current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.172-173
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• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

• Journal of the Mineralogical Society of Korea
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• v.24 no.1
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• pp.31-36
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• 2011

Meteorites are extraterrestrial solid rock fragments that fell from the outer space. Investigating mineral magnetic properties of the Meteorites is essential in understanding the evolution of planets and asteroids in the Solar System. In particular, magnetic characterization of magnetic mineral can provide constraints on the progress of differentiation in ancient planetary bodies. In the present study, ratio of thermoremanent magnetization (TRM) over saturation isothermal remanent magnetization (SIRM) was applied to diagnose the magnetic minerals in meteorites and igneous rocks. Distinctive classification of TRM/SIRM suggests that kamacite, tetrataenite, magnetite, and (Cr,Ti)-rich iron oxide are responsible for the magnetization of H5 Richardton, LL6 St. Severin, ALH84001, and DaG476, respectively. The TRM/SIRM ratio could be an efficient tool in identifying magnetic minerals especially when rocks or meteorites contain unstable material under heating.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.557-563
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• 2006

The electrolytic reduction of spent oxide fuel involves the liberation of oxygen in a molten LiCl electrolyte, which results in a chemically aggressive environment that is too corrosive for typical structural materials. So, it is essential to choose the optimum material for the process equipment handling molten salt. In this study, corrosion behavior of Inconel 713LC, MA 754, X-750 and 718 in the molten salt $LiCl-Li_2O$ under an oxidizing atmosphere was investigated at $650^{\circ}C$ for $72{\sim}216$ hours. Inconel 713LC alloy showed the highest corrosion resistance among the examined alloys. Corrosion products of Inconel 713LC were $Cr_2O_3,\;NiCr_2O_4$ and NiO, and those of Inconel MA 754 were $Cr_2O_3\;and\;Li_2Ni_8O_{10}$ while $Cr_2O_3,\;NiFe_2O_4\;and\;CrNbO_4$ were produced from Inconel 718. Also, corrosion products of Inconel X-750 were found to be $Cr_2O_3,\;NiFe_2O_4\;and\;(Cr,Nb,Ti)O_2$. Inconel 713LC showed local corrosion behavior and Inconel MA 754, 718, X-750 showed uniform corrosion behavior.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.268-273
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• 2016

In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.29-32
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• 2012

Lead-free $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ti_{0.83})O_3$ (hereafter 0.98NKN-0.02LST) ceramics doped with $Ag_2O$ were prepared using a conventional mixed oxide method. The specimen showed superior structural and electrical properties when 1 mol% $Ag_2O$ was doped. For the 0.98NKN-0.02LST+1.0mol%$Ag_2O$ ceramics sintered at $1,100^{\circ}C$, piezoelectric constant ($d_{33}$) of sample showed the optimum values of 207 pC/N. The 0.98NKN-0.02LST+1.0 mol%$Ag_2O$ ceramics are a promising candidate for lead-free piezoelectric materials.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.5
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• pp.597-607
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• 2004

Purpose: This study was peformed to investigate the retrievability of the cemented crown from the cementation type implant abutment. Material and method: The cementation type implant abutments (NEOBIOTECH implant abutment regular, 3 degree taper, 10mm length, 4mm diameter, Ti grade III, machined surface. Hwasung, Kyunggi-do) and cemented crowns were divided into 3 groups, depending on their hole angles formed in the crowns for their retrievability. The abutments and crowns were luted with 4 kinds of cements and separation test using metal wedge was executed with Instron 4465 Universal Testing Machine and the maximum impact force of the modified crown ejector was measured. Results and conclusion : 1. All of the cementation type implant abutments and cemented crowns were separated with relatively small force by metal wedge. 2. The retrieving force was minimum when the metal wedge was applied perpendicular to the axis of abutment. 3. The force for retrieving crowns from abutments was maximum in resin cement group, and reduced in orders of zinc phosphate cement, glass ionomer cement and zinc oxide eugenol cement. 4. The maximum force obtained by the crown ejector was higher than the retrieval force in ZOE and GI cement and lower than that in ZPC and resin cement. 5. If it has similar conditions clinically, the cemented crowns luted with 2 types of cements (ZOE, GI cement) can be safely retrieved from the cementation type implant abutments by the modified crown ejector.