Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement of Thermal Stability of Ni-InGaAs Using Pd Interlayer for n-InGaAs MOSFETs

n-InGaAs MOSFETs을 위한 Pd 중간층을 이용한 Ni-InGaAs의 열 안정성 개선

  • Li, Meng (Department of Electronics Engineering, Chungnam National University) ;
  • Shin, Geonho (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Jeongchan (Department of Electronics Engineering, Chungnam National University) ;
  • Oh, Jungwoo (Yonsei Institute of Convergence Technology, School of Integrated Technology, Yonsei University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
  • 이맹 (충남대학교 전자전파정보통신공학과) ;
  • 신건호 (충남대학교 전자전파정보통신공학과) ;
  • 이정찬 (충남대학교 전자전파정보통신공학과) ;
  • 오정우 (연세대학교 글로벌융합공학부 미래융합기술연구소) ;
  • 이희덕 (충남대학교 전자전파정보통신공학과)
  • Received : 2017.10.17
  • Accepted : 2018.01.10
  • Published : 2018.03.01
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Abstract

Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.

Keywords

References

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