Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of MOSFET Devices with Polycrystalline-Gallium-Oxide Thin Films Grown by Mist-CVD

Mist-CVD법으로 증착된 다결정 산화갈륨 박막의 MOSFET 소자 특성 연구

  • Seo, Dong-Hyun (Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Yong-Hyeon (Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Shin, Yun-Ji (Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Myung-Hyun (Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Jeong, Seong-Min (Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Bae, Si-Young (Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology)
  • 서동현 (한국세라믹기술원 에너지환경본부) ;
  • 김용현 (한국세라믹기술원 에너지환경본부) ;
  • 신윤지 (한국세라믹기술원 에너지환경본부) ;
  • 이명현 (한국세라믹기술원 에너지환경본부) ;
  • 정성민 (한국세라믹기술원 에너지환경본부) ;
  • 배시영 (한국세라믹기술원 에너지환경본부)
  • Received : 2020.07.27
  • Accepted : 2020.08.12
  • Published : 2020.09.01
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Abstract

In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga2O3) thin films grown by mist-CVD. A 500~800 nm-thick Ga2O3 film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga2O3 layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (ID) exceeded 1 mA at a drain voltage (VD) of 20 V. Electron mobility of the β-Ga2O3 channel was determined from maximum transconductance (gm), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga2O3 thin films.

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