• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.427-431
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• 2017

In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.

• Journal of the Korean Electrochemical Society
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• v.12 no.2
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• pp.189-195
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• 2009

$\beta-Ga_{2}O_{3}$ nanorods were synthesized by chemical vapor deposition method using nickel-oxide nanoparticle as a catalyst and gallium metal powder as a source material. The average diameter of nanorods was around 160 nm and the average length was $4{\mu}m$. Also, we confirmed that the synthesis of nanorods follows the vapor-solid growth mechanism. From the results of X-ray diffraction and HR-TEM observation, it can be found that the synthesized nanorods consisted of a typical core-shell structure with single-crystalline $\beta-Ga_{2}O_{3}$ core with a monoclinic crystal structure and an outer amorphous gallium oxide layer. Li/$\beta-Ga_{2}O_{3}$ nanorods cell delivered capacity of 867 mAh/g-$\beta-Ga_{2}O_{3}$ at first discharge. Although the Li/$\beta-Ga_{2}O_{3}$ nanorods cell showed low coulombic efficiency at first cycle, the cell exhibited stable cycle life property after fifth cycle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.149-156
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• 2002

Europium-activated $Ga_2O_3$ phosphor powders were prepared by homogeneous precipitation method. The resulting powders were characterized by means of TG/DTA, XRD, FT-IR and SEM, Two kinds of powders formed were the crystalline GaOOH and the amorphous-like $\gamma$-$Ga_2O_3$ phases. When the urea concentration was below 0,5 M, rod-like micrometer-sized GaOOH powders were formed. They were transformed via $\alpha$-$Ga_2O_3$ to $\beta$-$Ga_2O_3$ phases under heat treatment. On the other hand, the nanometer-sized $\gamma$-$Ga_2O_3$ powders were formed with urea concentrations higher than 1.0 M, and they were directly changed into $\beta$-$Ga_2O_3$.Photoluminescence (PL) spectra were observed at room temperature, and PL intensities of nanometer-sized $Ga_2O_3$ : $Eu^{3+}$ powders around 610 nm were higher than those of micrometer-sized ones.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.848-850
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• 2001

In this work, we investigated on the white-colored ribbon fiber synthesized from GaN powder. We convinced the formation of monoclinic phase $\beta$-Ga$_2$O$_3$from the X-ray diffraction pattern on ribbon fiber. The 10 K PL spectrum consisted with the strong emission band caused by self-activated optical center at 3.464 eV with the full-width at half maximum of 48 meV and the impurity related emission bands. Through this work, the optical properties and the electrical conductivity of $\beta$-Ga$_2$O$_3$, it will be useful for the fabrication of optoelctronic devices operating in visible spectrum region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.965-971
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• 2001

$\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles were synthesized from mechanically ground GaN powders with thermal annealing in a nitrogen atmosphere and an oxygen atmosphere, respectively. The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts synthesized in the nitrogen atmosphere are with the range of 20~1000nm width and 10 ~100nm thickness, and that nanomaterials are nanoparticles with 20~50nm radius obtained by thermal annealing in an oxygen atmosphere. The crystal structure of the $\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles was in this study investigated by X-ray diffractometer (XRD) and high-resolution transmission electron microscope (HRTEM). The formation processes of the nanobelts and nanoparticles will be discussed in this paper.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.158-160
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• 2001

${\beta}-Ga_2O_3$ nanobelts and nanoparticles were synthesized by a thermal annealing of as-milled GaN powders at $930^{\circ}C$ in nitrogen and oxygen atmosphere. respectively. The width of the nanobelts are $20\;nm{\sim}1000\;nm$. the thickness of the nanobelts are 100 nm. A bundle of the nanobelts is several centimeters in length. The lattice structure of these nanobelts and nanoparticles was identified to be a monoclinic ${\beta}-Ga_2O_3$ by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED).

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.214-220
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• 2014

In this research, a precipitation method was used to synthesize ${\beta}-Ga_2O_3$ powders with various particle morphologies and sizes under varying precipitation conditions, such as gallium nitrate concentration, pH, and aging temperature, using ammonium hydroxide and ammonium carbonate as precipitants. The obtained powders were characterized in detail by XRD, SEM, FT-IR, and TG-DSC. From the TG-DSC result, GaOOH phase was transformed to ${\beta}-Ga_2O_3$ at around $742^{\circ}C$, and weight loss percent was about 14 % when $NH_4OH$ was used as a precipitant. Also, ${\beta}-Ga_2O_3$ formed at $749^{\circ}C$ and weight loss percent was about 15 % when $(NH)_2CO_3$ was used as a precipitant. XRD results showed that the obtained $Ga_2O_3$ had pure monoclinic phase in both cases. When $(NH)_2CO_3$ was used as a precipitant, the particle shape changed and became irregular. The range of particle size was about $500nm-4{\mu}m$ based on various concentrations of gallium nitrate solution with $NH_4OH$. The particle size was increased from $1-2{\mu}m$ to $3-4{\mu}m$ and particle shape was changed from spherical to bar type by increasing aging temperature over $80^{\circ}C$.

• Korean Journal of Materials Research
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• v.23 no.2
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• pp.104-111
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• 2013

In this study, GaN powders were synthesized from gallium oxide-hydroxide (GaOOH) through an ammonification process in an $NH_3$ flow with the variation of $B_2O_3$ additives within a temperature range of $300-1050^{\circ}C$. The additive effect of $B_2O_3$ on the hexagonal phase GaN powder synthesis route was examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared transmission (FTIR) spectroscopy. With increasing the mol% of $B_2O_3$ additive in the GaOOH precursor powder, the transition temperature and the activation energy for GaN powder formation increased while the GaN synthesis limit-time ($t_c$) shortened. The XPS results showed that Boron compounds of $B_2O_3$ and BN coexisted in the synthesized GaN powders. From the FTIR spectra, we were able to confirm that the GaN powder consisted of an amorphous or cubic phase $B_2O_3$ due to bond formation between B and O and the amorphous phase BN due to B-N bonds. The GaN powder synthesized from GaOOH and $B_2O_3$ mixed powder by an ammonification route through ${\beta}-Ga_2O_3$ intermediate state. During the ammonification process, boron compounds of $B_2O_3$ and BN coated ${\beta}-Ga_2O_3$ and GaN particles limited further nitridation processes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.1-8
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• 2017

Catalytic synthesis and properties of ${\beta}-Ga_2O_3$ nanowires grown by metal organic chemical vapor deposition are reported. Au, Ni and Cu catalysts were suitable for the growth of $Ga_2O_3$ nanowires under our experimental conditions. The $Ga_2O_3$ nanowires grown by using Au, Ni and Cu catalysts showed different growth rates and morphologies in each case. We found the $Ga_2O_3$ nanowires were grown by the Vapor-Solid (VS) process when Ni was used as a catalyst while the Vapor-Liquid-Solid (VLS) was a dominant process in case of Au and Cu catalysts. Also, we found nanowires showed different optical properties depend on catalytic metals. On the other hand, for the cases of Ti, Sn and Ag catalysts, nanowires could not be obtained under the same condition of Au, Cu and Ni catalytic synthesis. We found that these results are related to the different characteristics of each catalyst, such as, melting points and phase diagrams with gallium metal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.576-581
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• 2023

The Ga₂O₃ thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga₂O₃ thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga₂O₃ thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga₂O₃ treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga₂O₃ represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga₂O₃ can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga₂O₃ can be applied to various devices by controlling not only temperature but process time.