• 자원환경지질
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• 제56권6호
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• pp.745-764
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• 2023

In the Republic of Congo, Banded iron formations (BIFs) occur in two areas: the Chaillu Massif and the Ivindo Basement Complex, which are segments of the Archean Congo craton outcropping in the northwestern and southwestern parts of the country. They show interesting potential with significant mineral resources reaching 2 Bt and grades up to 60% Fe. BIFs consist mostly of oxide-rich facies (hematite/magnetite), but carbonate-rich facies are also highlighted. They are found across the country within the similar geological sequences composed of amphibolites, gneisses and greenschists. The Post-Archean Australian Shale (PAAS)-normalized patterns of BIFs show enrichment in elements such as SiO₂, Fe₂O₃, CaO, P₂O₅, Cr, Cu, Zn, Nb, Hf, U and depletion in TiO₂, Al₂O₃, MgO, Na₂O, K₂O, Sc, Th, Ba, Zr, Rb, Ni, V. REE diagrams show slight light REEs (rare earth elements; LREEs) compared to heavy REEs (HREEs), and positive La and Eu anomalies. The lithological associations, as well as the very high (Eu/Eu^*)_SN ratios> 1.8 shown by the BIFs, suggest that they are related to Algoma-type BIFs. The positive correlations between Zr and TiO₂, Al₂O₃, Hf suggest that the contamination comes mainly from felsic rocks, while the absence of correlations between MgO and Cr, Ni argues for negligeable contributions from mafic sources. Pr/Pr^* vs. Ce/Ce^* diagram indicates that the Congolese BIFs were formed in basins with redox heterogeneity, which varies from suboxic to anoxic and from oxic to anoxic conditions. They were formed through hydrothermal vents in the seawater, with relatively low proportions of detrital inputs derived from igneous sources through continental weathering. Some Congolese BIFs show high contents in Cr, Ni and Cu, which suggest that iron (Fe) and silicon (Si) have been leached through hydrothermal processes associated with submarine volcanism. We discussed their tectonic setting and depositional environment and proposed that they were deposited in extensional back-arc basins, which also recorded hydrothermal vent fluids.

• 한국세라믹학회지
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• 제49권5호
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• pp.404-411
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• 2012

The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of Microbiology and Biotechnology
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• 제10권2호
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• pp.147-153
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• 2000

This study was conducted to compare probiotic activities and physiological functions of Bifidobacterium longum Mk-G7 with weveral commercial and type strains of bifidobacteria. bif. longum MK-G7 showed the highest acid tolerance against HCl and acetic acid, whereas bif. infantis Y-1 showed the lowest acid tolerance and more than 4 log cycles of viable cell count decreased due to acid injuty. Viable cell counts of bifidobacteria strains decreased more than 1.5 log cycles owing to oxygen toxicity, with the exception of Bif. longum MK-G7, Bif. infantis Y-2, Bif. longum Y-3, Bif. longum Y-6, and Bif. longum RD-13 showed the highest bile tolerance, whereas Bif. longum MK-G7 showed a medium level of bile tolerance. Only Bif. longum MK-G7 howed much higher antibiotic resistance against both tetracycline and penicillin-G in the MIC(minimum inhibitory concentration) level of 24.8 mg/I and 0.52mg/I, respectively. Bif longum Y-6, and Bif. bifidum ATCC 29539 showed more than 80% of anti-mutagenicity against NQO(4-nitroquinolinel-oxide). Since the production of cytokines such as $TNF(tumor necrosis factor)-{\alpha}$ and IL (interleukin)-6, and NO(nitric oxide) in the macrophage cell line Raw 264.7 cells increased as Bif. longum MK-G7 cell concentration increased, ti was suggested that Bif. longum MK-G7 is able to enhance immunopotentiating activity in vitro. When freeze-dred Bif. longum MK-G7 was administered to mice at the dose of 1,2,4, and 6 g/kg of body weight, all of the mice survived in all feeding groups, proving the GRAS(generally recognized as safe) status of Bif. longum MK-G7. When fermented milk containing Bif. longum MK-G7 was administered to human volunteers, viable cell count of total bifidobacteria and anaerobes in the feces increased up to 0.5 log cycles more than before the administration. In particular, Bif. logum MK-G7 ingibited the growth of Bacteroides at the level of 1.0-1.5 log cycles.

• 자원리싸이클링
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• 제32권6호
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• pp.54-66
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• 2023

타이타늄은 다양한 용도에 사용되고 있어 광물자원으로서의 중요성이 높아지고 있으나 대부분 수입에 의존하고 있다. 국내에도 주로 일메나이트로 구성된 타이타늄 원광이 존재하며 이를 개발하기 위한 연구가 진행되고 있지만 원료 소재로의 개발은 진행되고 있지 않아 안정적인 타이타늄 공급망을 확보하기 위한 대책이 시급하다. 이에 본 연구에서는 타이타늄 광물의 안정적인 확보를 위해 선광 기술별 기초 실험을 실시하여 유가광물의 효율적 회수를 위한 기술 적용 가능성을 평가하였다. 실험 결과, 풍화작용으로 인한 광물들의 입자가 미립의 형태로 존재하여 분급을 통한 회수는 어려운 것으로 확인되었다. 비중선별, 부유선별 및 자력선별의 선광기술을 적용한 결과, 적철석과 금홍석 등의 유가광물 회수가 가능하다. 그러나 타이타늄 광석에 함유된 적철석과 금홍석이 미세한 입자로 물리적으로 결합되어 있는 광물학적 특성에 의해 산화티탄의 품위와 실수율을 높이는데 한계성이 있다. 따라서 타이타늄 광석 내 산화티탄과 더불어 철, 바나듐, 희토류 성분도 함께 자원으로 활용할 수 있는 용도 개발이 필요하며, 이를 위해서 구성광물 간 단체분리도 향상 분쇄 기술, 미세한 광물입자 간 자력 감응 차이를 이용한 자력선별 기술, 그리고 산화철 및 산화티탄 성분의 개질 후 유가물질을 경제적으로 확보할 수 있는 선광 기술의 개발이 필요하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.263-263
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• 2016

최근 반도체 시장에서는 저비용으로 고성능 박막 트랜지스터(TFT)를 제작하기 위한 다양한 기술들이 연구되고 있다. 먼저, 재료적인 측면에서는 비정질 상태에서도 높은 이동도와 가시광선 영역에서 투명한 특성을 가지는 산화물 반도체가 기존의 비정질 실리콘이나 저온 폴리실리콘을 대체하여 차세대 디스플레이의 구동소자용 재료로 많은 주목받고 있다. 또한, 공정적인 측면에서는 기존의 진공장비를 이용하는 PVD나 CVD가 아닌 대기압 상태에서 이루어지는 용액 공정이 저비용 및 대면적화에 유리하고 프리커서의 제조와 박막의 증착이 간단하다는 장점을 가지기 때문에 활발한 연구가 이루어지고 있다. 특히 산화물 반도체 중에서도 indium-gallium-zinc oxide (IGZO)는 비교적 뛰어난 이동도와 안정성을 나타내기 때문에 많은 연구가 진행되고 있지만, 산화물 반도체 기반의 박막 트랜지스터가 가지는 문제점 중의 하나인 문턱전압의 불안정성으로 인하여 상용화에 어려움을 겪고 있다. 따라서, 본 연구에서는 기존의 산화물 반도체의 불안정한 문턱전압의 문제점을 해결하기 위해 마이크로웨이브 열처리를 적용하였다. 또한, 기존의 IGZO에서 suppressor 역할을 하는 값비싼 갈륨(Ga) 대신, 저렴한 지르코늄(Zr)과 하프늄(Hf)을 각각 적용시켜 용액 공정 기반의 Zr-In-Zn-O (ZIZO) 및 Hf-In-Zn-O (HIZO) TFT를 제작하여 시간에 따른 문턱 전압의 변화를 비교 및 분석하였다. TFT 소자는 p-Si 위에 습식산화를 통하여 100 nm 두께의 $SiO_2$가 열적으로 성장된 기판 위에 제작되었다. 표준 RCA 세정을 진행하여 표면의 오염 및 자연 산화막을 제거한 후, Ga, Zr, Hf 각각 suppressor로 사용한 IGZO, ZIZO, HIZO 프리커서를 이용하여 박막을 형성시켰다. 그 후 소스/드레인 전극 형성을 위해 e-beam evaporator를 이용하여 Ti/Al을 5/120 nm의 두께로 증착하였다. 마지막으로, 후속 열처리로써 마이크로웨이브와 퍼니스 열처리를 진행하였다. 그 결과, 기존의 퍼니스 열처리와 비교하여 마이크로웨이브 열처리된 IGZO, ZIZO 및 HIZO 박막 트랜지스터는 모두 뛰어난 안정성을 나타냄을 확인하였다. 결론적으로, 본 연구에서 제안된 마이크로웨이브 열처리된 용액공정 기반의 ZIZO와 HIZO 박막 트랜지스터는 추후 디스플레이 산업에서 IGZO 박막 트랜지스터를 대체할 수 있는 저비용 고성능 트랜지스터로 적용될 것으로 기대된다.

• 한국산업보건학회지
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• 제25권3호
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• pp.294-300
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• 2015

Objectives: The aim of this study is to identify physicochemical properties such as chemical composition, size, shape and crystal structure of powder byproducts generated from a metallization process and its 1st scrubber in the semiconductor industry. Methods: Powder samples were collected from inner chambers during maintenance of the W-plug process equipment (using tungsten hexafluoride as a precursor material) and its 1st scrubber. The chemical composition, size and shape of the powder particles were determined by field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) equipped with an energy dispersive spectroscope (EDS). The crystal structure of the powders was analyzed by X-ray diffraction (XRD). Results: From the SEM-EDS and TEM-EDS analyses, O and W were mainly detected, which indicates the powder byproducts are tungsten trioxide ($WO_3$), whereas Al, F and Ti were detected as low peaks. The powder particles were spherical and nearly spherical, and the particle size collected from the process equipment and its 1st scrubber showed 10-20 nm (agglomerates: 55-90 nm) and 16-20 nm (agglomerates: 80-120 nm) as primary particles, respectively. The XRD patterns of the yellow powder byproducts exhibit five peaks at $23.8^{\circ}$ $33.9^{\circ}$ $41.74^{\circ}$ $48.86^{\circ}$ and $54.78^{\circ}$ which correspond to the (200), (220), (222), (400), and (420) planes of cubic $WO_3$. Conclusions: We elucidated the physicochemical characteristics of the powder byproducts collected from W-plug process equipment and its 1st scrubber. This study should provide useful information for the development of alternative strategies to improve the working environment and workers' health.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• 한국진공학회지
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• 제22권3호
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• pp.138-143
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• 2013

최근 산화아연 나노입자의 물리-화학적 특성을 이용하여 다양한 분야에 응용하는 연구가 많이 진행되고 있다. 본 연구에서는 산화아연 나노입자의 산화-환원 반응을 이용하여 광촉매의 응용 연구를 진행하였다. 이러한 산화아연 광촉매는 산화티타늄 광촉매에 비하여 물 용매에서의 $Zn(OH)_2$를 형성하여 광촉매 활성을 감소시키는 단점을 가지고 있다. 따라서 본 연구에서는 분무 열분해 방법을 이용하여 산화아연 나노입자를 합성하고 이렇게 합성된 산화아연 나노입자의 물에 대한 안정성 연구를 진행하였다. 그 결과 1일 동안 물 용매 처리를 한 산화아연 나노입자의 표면에 molecular $H_2O$의 증가로 인하여 광촉매 효율이 증가하는 결과를 나타내었으며 본 연구에서 합성된 산화아연 나노입자가 물 용매에서 안정하다는 결과를 도출하였다.

• 보존과학연구
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• 통권26호
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• pp.165-188
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• 2005

From the ancient to these days, there have been used many kinds of pigment which have two types that are inorganic pigment and organic pigment. At the ancient times, natural pigment had been used but the artificially mixed pigment has been used in modern times. By the way, searching for studies has been studied recently, it would be said the ancient pigments such as Danchung, Wall painting and Mural painting are the mainthema. However, studies about the pigments used in modern pictured relics have rarely can be found. Therefore, this analysis of Ilweolokdo would be important at the point of the pigments used in pictures of royal family in modern times and the results can be briefly summarized as below; Firstly, the results of qualitative analysis of the pigments that base or all pigments of picture was detected components of Ca, Fe and As, this results meaning that picture was used filler and basic paint. Secondly, a result of the analysis on the composition elements of the pigments shows that the main components in their composition are ;White - Lead Cyanamide($2PbCO_3$.$Pb(OH)_2$) or Titanium Oxide($TiO_2$)Blue - Ultramarine($2(Na_2O$.$Al_2O_3$ .$2Si_O2$).$Na_2S_2$)Green - Emerald green($C_2H_3A_s3Cu_2O_8$)Gold - Gold(Au), Red-Red Lead($Pb_3O_4$) or Cinnabar(HgS)Black - Carbon(C)Thirdly, X-ray diffraction analysis of crystalline structure for the blue and green pigment peeling off in picture shows that the components of blue pigment is Ultramarine($2(Na_2O$.$Al_2O_3$ .$2Si_O2$).$Na_2S_2$) and green pigment is Emerald green($C_2H_3A_s3Cu_2O_8$). Especially, microcrystalline structure of the green pigment was the shape like a cross section of wood. Consequently, we knew through the analysis of qualitative and microcrystallinestructures seen on the cross section of analyzed pigments layer that the all pigments used in the Ilweoloakdo is possible to use synthetic pigments in modern.