• Journal of Powder Materials
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• v.9 no.5
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• pp.352-358
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• 2002

The effects of boron or manganese added as $B_4C$, Mn, $TiB_2$, B on TiC-30vo1.%$Ni_3Al$ cermet sintered at 1380 and $1400^{\circ}C$ for 1 hour, were examined in relation with shrinkage, relative density, microstructure, lattice parameter, hardness and fracture toughness ($K_{IC}$). The results are summarized as follows: 1) The highest shrink-age showed about 30.5% in the specimen added B$_4$C and the maximum relative density was about 99% in the specimen added $TiB_2$; 2) The grains of TiC were grown during sintering and made the surrounding structure by adding boron and manganese. The largest grain size showed about $2.8\mutextrm{m}$ in the specimen with boron sintered at $1400^{\circ}C$;3) The lattice parameter of TiC was about $4.325\AA$ and $Ni_3Al$ about $3.592\AA$ by adding other elements; 4) The highest hardness was about $1100kgf/\textrm{mm}^2$ in the specimen with B4C; 5) The fracture toughness ($K_{IC}$) showed about $15MNm^{-3/2}$ in the specimen added $TiB_2$.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1194-1202
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• 1995

The influences of TiC additions to the α-SiC on microstructural, mechanical, and electrical properties were investigated. Electrical discharge machinability of SiC-TiC composites was also studied. Samples were prepared by adding 30, 45, 60 wt.% TiC particles as a second phase to a SiC matrix. Sintering of SiC-TiC composites was done by hot pressing under a vacuum atmospehre from 1000 to 2000℃ with a pressure of 32 MPa and held for 90 minutes at 2000℃. Samples obtained by hot pressing were fully dense with the relative densities over 99% except 60wt.% TiC samples. Flexural strength and fracture toughness of the samples were increased with the TiC content. In case of SiC samples containing 45 wt.% TiC, the fracture toughness showed 90% increase compared to that of monolithic SiC sample. The crack propagation and crack deflection were observed with a SEM for etched samples after Vicker's indentation. The electrical resistivities of SiC-TiC composites were measured utilizing the four-point probe. The electrical dischage machining of composites was also conducted to evaluate the machinability.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.68-68
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• 2000

펄스레이저 증착법(이하 PLD)을 이용하여 마이크로파 유전체 소자 및 절연 산화막으로의 응용을 위한 MgTiO3 박막을 다양한 기판상에서 증착하였다. 사파이어 기판에 (a,c-plane Al2O3) 성장된 MgTiO3 박막은 에피텍셜 성장(epitaxial growth)이 되었으며, SiO2/Si 및 Pt/Ti/Si 기판위세 성장된 MgTiO3 박막의 경우 003방향으로 배향(oriented) 되었다. MgTiO3 박막은 450~75$0^{\circ}C$까지 기판온도를 변화시키면서 증착시켰으며, 증착시 산소분압은 50~200 mTorr로 변화시켰다. PLD 증착시 타켓에 조사된 레이저 에너지 밀도는 약 2J/cm2였으며, MgTiO3 박막 증착후 200Torr O2 분위기에서 상온까지 1$0^{\circ}C$/min 의 속도로 냉각시켰다. 사파이어 c-plane 상에서 일머나잇(ilminite) MgTiO3 구조가 55$0^{\circ}C$ 에피텍셜 성장하는 것을 관찰할 수 있었으며, 사파이어 a-plane 상에서는 MgTiO3 구조가 $650^{\circ}C$ 이상부터 110방향으로 배향되며 성장하였다. $600^{\circ}C$ 이상에서 c-축으로 배향된 구조를 갖고 있었다. 증착된 MgTiO3 박막의 조성분석(stoichio metric analysis)을 위해 RBS 분석을 수행하여, 증착에 이용된 타켓과 동일한 조성을 갖는 MgTiO3 박막이 성장된 것을 확인할 수 있었다. 사파이어 기판상에 증착된 MgTiO3 박막은 가시영역에서 투명하였으며, 약 270nm 파장을 갖는 영역에서 급격한 흡수단을 보였다. 이때의 MgTiO3 박막은 AFM 분석을 통해 약 0.87mn rms roughness 값을 갖는 매우 평탄한 표면구조를 갖고 있는 것을 확인하였다. MIM(Pt/MgTiO3/Pt) 구조의 캐패시터를 형성시켜 MgTiO3 박막의 유전특성(dielectric properties)을 관찰하였다. PLD로 성장된 MgTiO3 박막의 유전율(relative dielectric constant)은 약 22였으며, 1MHz에서 약 1.5%의 유전손실(dielectirc loss) 값을 보였다. 또한 이때 MgTiO3 박막은 낮은 유전분산값을 보였다.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.56-63
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• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.458-461
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• 2014

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

• Journal of Powder Materials
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• v.4 no.4
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• pp.291-297
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• 1997

Titanium cabide, TiC-x mole% Al composites, and functionally-graded materials (FGMs) of TiC-x mole% Al were synthesized by an electrothermal combustion (ETC) method. TiC-70 mole% Al composite was not ignited by indirect tungsten coil heating, but can be synthesized by an electrothermal combustion. The velocity of the combustion wave decreased with increasing addition of Al and increased with an increase in the applied electric field. Functionally-graded TiC-Al materials were made from reactant layers with compositions of Ti+C+x moles Al with x ranging from zero to 70 by an electrothermal combustion. In the FGM products a nearly linear change in composition in the graded region was observed in samples with 0$\leq$ x $\leq$ 70 with x being the mole% Al.

• Composites Research
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• v.33 no.5
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• pp.256-261
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• 2020

In this study, the ignition temperature of the Al-Ti-C reaction system, the microstructure and the mechanical properties of the TiC/Mg composite which produced by the self-propagating high-temperature synthesis (SHS) followed by stir casting process were investigated. Mg based composite with uniformly dispersed 0, 10, 20, and 30 vol.% TiC were fabricated, and higher volume fraction of TiC reinforced composite showed superior compressive strength and wear resistance as compared with Mg matrix. It is attributed to the less contamination, defects, impurities in TiC/Mg composite by the in-situ SHS yield effective load transfer from the matrix to the reinforcement.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.67-72
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• 1992

The growth of Ti on Si(111)-$7{\times}7$ and the formation of epitaxial C54 $TiSi_2$ were investigated by using reflection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-$7{\times}7$ at room temperature (RT). HRTEM lattice image and transmission electron diffraction(TED) showed that epitaxial C54 $TiSi_2$ grown on Si substrate with 160 ML of Ti on Si(111)-$7{\times}7$ surface at RT, followed by annealing at $750^{\circ}C$ for 10 min in UHV. Thin single crystal Si overlayer with [111] direction is grown on $TiSi_2$ surface when $TiSi_2$/Si(111) is annealed at ${\sim}900^{\circ}C$ in UHV, which was confirmed by Si(111)-$7{\times}7$ superstructure.

• Journal of the Korean Chemical Society
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• v.9 no.2
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• pp.71-74
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• 1965

Reduction of Ti(Ⅳ)-oxalate complex on dropping mercury electrode has been studied as a function of oxalate concentration and of pH varied with HCl. Assuming there are equilibrium $TiO(C_2O_4)_2= \;+\;2H^+\;=\;Ti^{+4}\;+\;2C_2O_4\;=\;+\;H_2O,\;K_4$ in addition to $TiO(C_2O_4)_2\;^=\;=\;TiO^{++}\;+\;2C_2O_4=\;K_2\;Ti(C_2O_4)_2\;^-\;=\;Ti^{+3}\;+\;2C_2O_4=\;K_3$ in the system cathodic wave has been well explained for that pH is higher than 0.5. The equilibrium constants $K_2,\;K_3$ and $K_4$ have been to be $2{\times}10^{-12},\;5{\times}10^{-13}$ and $10^{-11}$, respectively. The reduction of Ti(Ⅳ)-oxalate system is $Ti^{+4}\;+\;e\;{\to}\;Ti^{+3}$ in the concentration of hydrochloric acid, higher than 3M.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.