Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of RF Power on Physical and Electrical Characteristics of TiC Thin Films Deposited by Magnetron Sputtering

마그네트론 스퍼터링법으로 증착시킨 TiC 박막의 물리적, 전기적 특성에서 RF 파워의 영향

  • Kim, Nam-Hoon (Department of Electrical Engineering, College of Engineering, Chosun University) ;
  • Park, Yong Seob (Department of Photoelectronics, Chosun College of Science & Technology)
  • Received : 2014.06.11
  • Accepted : 2014.06.24
  • Published : 2014.07.01
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Abstract

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

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References

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