Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Micro-structure and NTCR Characteristics of Copper Manganite Thin Films Fabricated by MOD Process

MOD법으로 제조된 Copper Manganite 박막의 구조 및 NTCR 특성

  • Lee, Kui Woong (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Jeon, Chang Jun (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Jeong, Young Hun (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Yun, Ji Sun (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Nam, Joong Hee (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Cho, Jeong Ho (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Paik, Jong Hoo (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Yoon, Jong-Won (Department of Advanced Materials Science and Engineering, Dankook University)
  • 이귀웅 (한국세라믹기술원 전자소재융합본부 지능형전자부품팀) ;
  • 전창준 (한국세라믹기술원 전자소재융합본부 지능형전자부품팀) ;
  • 정영훈 (한국세라믹기술원 전자소재융합본부 지능형전자부품팀) ;
  • 윤지선 (한국세라믹기술원 전자소재융합본부 지능형전자부품팀) ;
  • 남중희 (한국세라믹기술원 전자소재융합본부 지능형전자부품팀) ;
  • 조정호 (한국세라믹기술원 전자소재융합본부 지능형전자부품팀) ;
  • 백종후 (한국세라믹기술원 전자소재융합본부 지능형전자부품팀) ;
  • 윤종원 (단국대학교 신소재공학과)
  • Received : 2014.06.02
  • Accepted : 2014.06.18
  • Published : 2014.07.01
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Abstract

Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.

Keywords

References

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