Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지

The Complexing Effect of $BaTiO_3\;for\;Bi_4Ti_3O_{12}$ on Layered Perovskite $Bi_4Ti_3O_{12}{\cdot}nBaTiO_3(n=1&2)$ Thin Films

$Bi_4Ti_3O_{12}{\cdot}nBaTiO_3(n=1&2)$ 박막에서 $Bi_4Ti_3O_{12}$ 에 대한 $BaTiO_3$의 복합효과

  • 신정묵 (인하대학교 공과대학 무기재료공학과) ;
  • 고태경 (인하대학교 공과대학 무기재료공학과)
  • Published : 1998.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

Keywords

References

  1. Electroceramics Ⅴ Recent Trends in Electroceramic Thin Films : I. Capacitor, Pyroelectric Sensors and Piezoelectric Devices R. Waser;J. L.Baptista(ed.);J. A.Labrincha(ed.);P. M.Vilarinho(ed.)
  2. Electroceramics Ⅴ Recent Trends in Electroceramic Thin Films : Ⅱ. DRAMs, Nonvolatile Memories and Optical Devices A.I.Kingon;S.K.Streiffer;J. L.Baptista(ed.);J. A.Labrincha(ed.);P. M.Vilarinho(ed.)
  3. Proc. 4th International Symp. on Inergrated Ferroelectrics v.9-11 Feasibility for Memory Devices and Electrical Characterization of Newly Developed Fatigue Free Capacitors T. Mihara;H. Watanabe;C. A. Paz de Araujo;J. Cachiaro
  4. Integ. Ferroelectrics v.12 no.2-4 Laser Ablation Preparation and Property of Bismuth-Layer-Structured$SrBi_2Ta_2O_9$and$Bi_4Ti_3O_12$Ferroelectric Thin Films M. Okuyama;W. B. Wu;Y. Oishi;Y. Hamakawa
  5. Jpn. J. Appl. Phys. v.33 no.9B Ferroelectric Properties and Fatigue Characteristics of$Bi_4Ti_3O_12$Thin Film by Sol-Gel Processing M. Toyoda;Y. Hamaji;K. Tomono;D. A. Payne
  6. Phys. Rev. v.122 no.3 Ferroeletricity in$Bi_4Ti_3O_12$and Its Solids Solutions E. C. Subbarao
  7. J. Am. Ceram. Soc. v.45 no.4 Crystal Ch emistry of Mixed Bismuth Oxides with Layer-Type-Structure E. C. Subbarao
  8. Arkiv. Kemi. v.1 no.58 Mixed Bismuth Oxides with Layer Lattices B. Aurivillius
  9. Jpn. J. Appl. Phys. v.35 no.9B Grain-Oriented Ceramics in Bismuth Layer-Structure Compounds for Capacitor Material K. Shoji;Y. Uehara;K. Sakata
  10. Jpn. J. Appl. Phys. v.13 no.10 Piezoelectricity in Ceramics of Ferroelectric Bismuth Compound with Layer Structure S. Ikegami;I. Ueda
  11. Numercrical Data and Functional Relationships in Science and Technology v.16 Landolt-B mstein;K. H. Hellwege(Ed.)
  12. Ceram. Trans. v.25 Synthesis and Characterization of$Bi_4Ti_3O_12$ E. Dayalan;C. H. Peng;S. B. Desu
  13. Mat. Lett. v.18 Synthesis and Characterization of an Acctate-alkoxide Precursor for Sol-Gel Derived$Bi_4Ti_3O_12$ M.T oyoda;D A Payne
  14. Jpn. J. Appl. Phys. v.32 Sysnthesis and Characterization of$Bi_4Ti_3O_21$thin Films by Sol-Gel Processing M.Toyoda;Y.Hamaji;K.Tomono;D. A.Payne
  15. Am. Ceram. Soc. Bull. v.66 no.4 Phase Pelations and Dielectric Properties of Ceramics in the System$Pb(Zn{1}/{3}Nb{2}/{3})O_3-SiTiO_3-PbiO_3$ J. R. Belsick;A. Halliyal;U. Kumar;R.E. Newnham
  16. 요업학회지 v.34 no.8 졸겔공정을 이용한$Bi_{4-x}Sm_xTi_3O_12(0\lex\le2)$박막 제조 및 특성평가 이창민;고태경
  17. J. Am. Ceram. Soc. v.67 no.5 Dielectric Properties of Lead Magnesium Niobate Ceramics L. Swartz;T R.Shrout;W. A.Schulze;L. E.Cross
  18. J. Mat. Res. v.10 no.4 Role of Excess PbO on the Microstructure and Dielectric Properties of Lead Magnesium Niobate S. M. Gupta;A. R. Kulkarni
  19. Compt. rend. v.252 no.5 Ferroelectric Properties of Mixed Titanates of the System$Bi_4Ti_3O_12{\cdot}nBaTiO_3$ P. Fang;C. Robbins;F. Forrat
  20. Int. Ferroelectrics v.15 Dielectric Analysis of Integrated Ceramic Thin Film Capacitors R. Waser
  21. J. Appl. Phys. v.80 no.4 Structural and Electrical Characteristics of Rapid Thermally Provessid Ferroelectric Bi4TieO12 Thin Films Prepared by Matalorganic Solution Deposition Technique P.C.Joshi;S.B.Desu
  22. J. Appl. Phys. v.72 no.12 Structural and Electrical Studies on Rapid Thermally Processed Ferroelectronic$Bi_4Ti_3O_12$Thin Films by Metallo-organic Solution Deposition P. C.Joshi;S. B.Krupanidhi
  23. Jpn. J. Phys. v.34 no.9B Charcateristic of Bismuth Layered$SrBi_2Ta_2O_9$Thin Film Capacitors and Comparison with Pb(Zr,Ti)O3 T. Mihara;H. Yoshimori;H. Watanabe;C. Paz de Araujo