• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.88-93
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• 2005

Ti-AI-Si-N coating layers were deposited on WC-Co substrates by a hybrid system of arc ion plating and sputtering techniques. The coatings were prepared with different Si contents to investigate the effect of Si content on their mechanical properties and microstructures. The dry sliding wear experiments were conducted on Ti-AI-Si-N coated WC-Co discs at constant load, 3N, and sliding speed, 0.1 m/s with two different counterpart materials such as steel ball and zirconia ball using a conventional ball-on-disc sliding wear apparatus. In the case of steel ball, the friction coefficient of Ti-AI-Si-N coating layers became lower than that of Ti-AI­N coating layers. The friction coefficient decreased with increasing of Si content due to adhesive wear behavior between coating layer and steel ball. On the contrary, in the case of zirconia ball, the friction coefficient increased with increasing of Si content, indicating that abrasive wear behavior was more dominant when the coating layers slid against zirconia ball.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.324-330
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• 1999

$Si_3N_4$-$TiB_2$ with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ additives was hot pressed in a flowing $N_2$ environment with varying $TiB_2$ content from 10 to 50 vol%. Variations of mechanical (hardness, fracture toughness, and flexual strength), and tribological properties as a function of $TiB_2$ content were investigated. As the content of $TiB_2$ increased, relative density decreased due to the chemical reaction of $TiB_2$in $N_2$ environment. The reduction of density causes mechanical properties to be degraded with an increase of $TiB_2$ in $Si_3N_4$. Tribological properties were dependent of microstructure as well as mechanical properties, however, they were degraded strongly by the chemical reaction of $Si_3N_4$-$TiB_2$ during hot pressing in $N_2$ environment. SEM and TEM observations, and X-ray diffraction analysis that the chemical reaction products at the interface are TiCN, Si, and $SiO_2$. Also, the comparison of XRD patterns of the $Si_3N_4$-40 vol% $TiB_2$ composites hot pressed at $1,750^{\circ}C$ for 1 hour between in $N_2$ and in Ar gas was made. The XRD peaks of Si and $SiO_2$ were not found in Ar, but still a weak peak of TiCN was presented.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.157-164
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• 1998

Effects of alloying elements on the pitting behavior of Ti-Al intermetalic compounds in the electrolytic soution containing Cl- were investigated through electrochemical tets and corrosion morphologies. Corrosion potential increased in the case of Cr addition to Ti-48%Al, whereas it decreased in the case of Si and B addition. The simultaneous addition of Cr and Si increased passive current density and decrosion corrosion potential. The passive current density of N addtion was higher than that of B addition in H2SO4 solution. With the addition of alloying elements, The pitting resistance decreased in order of TiAl>TiAlSi>TiAlN>TiAlB>TiAlCr and whin siumultaneous addition, it decreased in order of TiAlCrSi>TiAlCrBN>TiAlCrrN. The surface merohology after pitting test showed that the TiAl coataining Si had for fewer pits than that containing Cr and N simultaneously.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.161-162
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• 2009

하이브리드 코팅장비를 이용해 WC-CO기판위에 Ti-Si-N박막을 증착 시켰다. 이 연구는 Ti-Si-N박막의 기계적 성질에 온도와 바이어스가 미치는 영향에 대해 실험을 하였다. 증착온도가 $300^{\circ}C$까진 Ti-Si-N박막의 미세경도와 탄성률은 증가했지만 증착온도가 $300{\sim}350^{\circ}C$에서는 탄성률은 감소하고 결정 성장으로 인해 미세경도는 감소하였다. 기판 바이어스는 박막과 미세구조에 압축 잔류 응력을 야기 시킨다. 그러나 기판바이어스가 -400V 이상에서는 re-sputtering에 의해 Si함량이 감소한다. Ti-Si-N 박막의 가장 우수한 기계적 성질은 $300^{\circ}C$, -100V에서 얻을 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.189-189
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• 2016

In this study, the Al-rich AlTiSiN thin films that consisted of TiN/AlSiN nano-multilayers were deposited on the steel substrate by magnetron sputtering, and their high-temperature oxidation behavior was investigated, which has not yet been adequately studied to date. Since the oxidation behavior of the films depends sensitively on the deposition method and deposition parameters which affect their crystallinity, composition, stoichiometry, thickness, surface roughness, grain size and orientation, the oxidation studies under various conditions are imperative. AlTiSiN nano-multilayer thin films were deposited on a tool steel substrate, and their oxidation behavior of was investigated between 600 and $1000^{\circ}C$ in air. Since the amount of Al which had a high affinity for oxygen was the largest in the film, an ${\alpha}-Al_2O_3-rich$ scale formed, which provided good oxidation resistance. The outer surface scale consisted of ${\alpha}-Al_2O_3$ incoporated with a small amount of Ti, Si, and Fe. Below this outer surface scale, a thin ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale formed by the inwardly diffusing oxygen. The film oxidized slower than the $TiO_2-forming$ kinetics and TiN films, but faster than ${\alpha}-Al_2O_3-forming$ kinetics. During oxidation, oxygen from the atmosphere diffused inwardly toward the reaction front, whereas nitrogen and the substrate element of iron diffused outwardly to a certain extent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.826-832
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• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.208-210
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• 2009

5성분계 Ti-Al-Si-C-N 코팅막은 하이브리드 코팅 시스템을 사용하여 실리콘 (Si) 웨이퍼와 SUS 304 기판위에 합성되었다. 본 연구에서는 Si 첨가에 의해 Ti-Al-Si-C-N 코팅막의 미세구조와 기계적 특성의 변화를 체계적으로 조사하였다. Si 함량이 증가됨에 따라 Ti-Al-Si-C-N 코팅막의 미세구조는 주상정에서 나노복합체를 가지는 미세구조로 변화하였다. 나노복합체의 고유한 특성에 의하여 미소경도는 약 56GPa로 증가하였고, Si가 증가함에 따라 평균 마찰계수도 크게 줄어들었다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.68-68
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• 2015

질화 티타늄(titanium nitride; TiN)은 색상이 미려하고 물리적 특성이 우수한 특성에도 불구하고 내산화성이 낮아 이를 해결하기 위해서 TiN에 Al을 첨가한 TiAlN 소재가 개발되었다. 하지만 난삭재 가공용 공구의 사용 온도가 $800^{\circ}C$이상인 점을 고려하여 $800^{\circ}C$ 이상의 고온 환경에서도 산화가 일어나지 않는 고경도 박막 소재가 요구되고 있으며 TiAlN 소재에 Si을 첨가하면 내산화성이 향상된다는 연구결과가 보고되고 있다. 본 연구에서는 음극 아크 증착과 스퍼터링을 동시에 이용한 하이브리드 공정으로 제조한 TiAlSiN 박막의 Si 함량에 따른 미세구조, 물리적 특성 그리고 내산화성을 평가하였다.