• Journal of Surface Science and Engineering
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• v.54 no.6
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• pp.324-330
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• 2021

As energy harvesting technology becomes important in relation to environmental issues, piezoelectric materials that convert mechanical energy into electrical energy are attracting attention. However, PZT, a representative material for piezoelectricity, is becoming difficult to use due to the problem that its components can cause environmental pollution. For this reason, recent research suggests a triboelectric nanogenerator (TENG) that generates energy through the combined effect of triboelectricity and electric induction for alternative piezoelectric devices. In TENG, electrical power is determined by the dielectric constant, thickness, and grain generation of the charged material. Therefore, in this study, a Rutile phase TiO₂ thin film with high dielectric constant was formed using the spin-coating process and the effect of annealing was investigated. For electrical analysis, a TENG device was fabricated using PTFE as a material with an opposite charge, and electrical output according to film thickness and grain formation was comparatively analyzed.

• Korean Chemical Engineering Research
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• v.48 no.4
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• pp.506-510
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• 2010

Electron recombinations in electrolyte solution reduce light-to-energy conversion efficiency at the nanoporous electrode surface of dye sensitized solar cells. In this study, we improved the conversion efficiency using an energy barrier at the nanoporous electrode surface to control the recombination process. The energy barrier was formed by coating nanoporous $TiO_2$ electrode with $Nb_2O_5$ material. We investigated the influence of energy barrier on the cell efficiency depending on the coating thickness. Nanoporous $TiO_2$ electrode was coated about 5 nm thickness by 12 times coatings, and so the coating layer was grown about 0.417 nm for every time. Enhancement of conversion efficiency from 2.55% to 4.25% was achieved at 0.834 nm coating thickness, and it was believed as the optimum thickness for minimizing the electron recombination process in our experimental system.

• Proceedings of the KWS Conference
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• 2002.05a
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• pp.285-287
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• 2002

This study is investigated in variations of micro-structures and mechanical properties of Ti/SUS321L joint with bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed the thickness of their reaction layer increased. In tensile test, it was examined that the tensile strength had maximum value at the bonding time of 5min and decreased after bonding time over 5min because of increasing their oxides and intermetallic compounds.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.140-148
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• 1995

Optical properties of $TiO_{2}$. Ag filrns and $TiO_{2}/Ag/TiO_{2}$ multilayer filrns with different thickness were predicted using the transfer matrix, and these results were compared with real transmittance curves of the sputterdeposited films. With the complex refractive indices, it was possible to predict transmittance characteristics which were close to real data for $TiO_{2}$ and Ag films. Due to the diffusion and agglomeration of Ag during $TiO_{2}$ deposition, optical properties of the sputterdeposited $TiO_{2}/Ag/TiO_{2}$ films were found to be very different from the transmittance curves predicted using the transfer matrix. Using deposition of 4nm-thick or 6nm-thick TI layers as a diffusion barrier, however, the transmittance curves of $TiO_{2}/Ti/Ag/Ti/TiO_{2}$ five-layer films became similar to ones predicted for $TiO_{2}/Ag/TiO_{2}$ threeiayer films.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.394-399
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• 2000

The effects of the type and thickness of underlayer on the crystallographic texture and the sheet resistance of aluminum thin film were studied. Ti and Ti/TiN were examined as the underlayer of aluminum. Ti and TiN were prepared by ionized physical vapor deposition (I-PVD) metalorganic chemical vapor deposition (MOCVD), respectively. The texture and the sheet resistance of metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For I-PVD Ti underlayer, the excellent texture of aluminum <111> was obtained even at top of 5 nm of Ti. However, the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. MOCVD TiN between Ti and Al could suppress the Al-Ti reaction without severe degradation of aluminum <111> texture. Excellent texture of aluminum was obtained for the MOCVD TiN thinner than 4 nm.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.3
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• pp.134-138
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• 2015

Ag intermediated $TiO_2$ films were deposited by RF and DC magnetron sputtering and then vacuum annealed at 100, 200 and $300^{\circ}C$ for 30 minutes to investigate the effect of annealing temperature on the structural and optical properties of the films. For all depositions, the thickness of the $TiO_2$ and Ag films were kept constant at 24 and 15 nm by controlling the deposition time. As-deposited $TiO_2/Ag/TiO_2$ trilayer films have a weak crystalline and an optical reflectance in a near infrared wavelength region of 77.8%, while the films annealed at $300^{\circ}C$ show the polycrystalline structure and an increased mean optical reflectance of 80.4%. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the structural and optical properties of the $TiO_2/Ag/TiO_2$ films.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.6
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• pp.291-295
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• 2015

IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

• Journal of Technologic Dentistry
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• v.27 no.1
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• pp.73-78
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• 2005

The surface-reacted layer of titanium castings greatly affects their mechanical properties. This study analyzed the interfacial zone of Ti-20%Zr-5%Cr alloy castings obtained from phosphate bonded investment and examined the relationship between the surface-reacted layer and hardness. The Vickers hardness of cast disks were tested at 20$\mu m$ intervals from the surface to 120$\mu m$ in depth. The cross-section was observed metallurgically, and line profile of the reacted layer was conducted under the EDX. The surface-reacted layer of Ti-20%Zr-5%Cr alloy is showed a similar tendency to Ti-6%Al-4%V alloy in thickness, and also Si diffusion in multiple reacted layer of Ti-20%Zr-5%Cr alloy is less than cp Ti and similar to Ti-6%Al-4%V alloy. The Vickers hardness in the surface layer was greater than in the inner part, and the Vickers hardness of Ti-20%Zr-5%Cr alloy ranged 650 to 390 and cp Ti ranged 810 to 160, Ti-6%Al-4%V alloy ranged 710 to 530 respectively.