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Influence of TiO2 Buffer Layer on the Electrical and Optical Properties of IGZO/TiO2 Bi-layered Films

TiO2 완충층이 IGZO/TiO2 이중층 박막의 전기적, 광학적 성질에 미치는 영향

  • Moon, Hyun-Joo (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • 문현주 (울산대학교 첨단소재공학부) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2015.09.01
  • Accepted : 2015.09.11
  • Published : 2015.12.30

Abstract

IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

Keywords

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