• Title/Summary/Keyword: Threshold stress

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Study on Relations among Use of Earphones, Stress, and Hearing Threshold in University Students (대학생의 이어폰 사용, 스트레스 및 청력의 관계)

  • Kwak, Hye-Weon;Kim, Na-Hyun
    • Journal of Korean Public Health Nursing
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    • v.26 no.1
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    • pp.126-136
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    • 2012
  • Purpose: The purpose of this study was to investigate the relationship among use of earphones, stress level, and hearing threshold in university students. Methods: Study subjects included 210 university students (76 men, 134 women). Data were collected by questionnaire and audiometer from December 17 to 20, 2011. The SPSS win 19.0 program was used for data analysis by descriptive statistics, t-test, one-way ANOVA, and Pearson's correlation coefficient. Results: 1) 4KHz, 6KHz hearing threshold of subjects who used earphones was higher than average hearing threshold of same age group. 2) Not significant differences in hearing threshold were observed according to frequency of use, and stress level. 3) Significant differences in 4KHz hearing threshold were observed according to earphone volume. 4) A significant positive correlation was observed between frequency of use and stress level (r=0.15, p<.05), earphone volume, and 4KHz hearing threshold (left) (r=0.15, p<.05); however, a negative correlation was observed between stress level and 4KHz hearing threshold (right) (r=-0.14, p<.05). Conclusion: A significant positive correlation was observed between frequency of use and stress level and earphone volume and 4KHz hearing threshold (left). Development of a program for hearing conservation is needed.

Dislocation/Particles Interaction and Threshold Stress in Precipitation-Hardened Al-0.55 wt% Zr Alloy with Fine Particles at High-Temperature (고온에서 미세입자를 가진 석출경화형 Al-0.55 wt% Zr 합금의 Threshold 응력과 전위/입자의 상호 작용에 관한 연구)

  • Kim, Byung I.;Nakashima, Hideharu
    • Journal of the Korean Society for Heat Treatment
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    • v.5 no.4
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    • pp.201-208
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    • 1992
  • An experimental study of the constitutive response of precipitation-strengthened Al-0.55wt% Zr alloy, which consists of an Al matrix precipitation-strengthened by coherent particles, ${\beta}^{\prime}(Al_3Zr)$ with $L1_2$ structure has been performed. The deformation response of the materials has been examined by stress relaxation test at 573K, 623K and 673K. It was found that there exist the threshold stress during stress relaxation and threshold stress results from the presense of ${\beta}^{\prime}(Al_3Zr)$ particles. The ratio of threshold stress and Orowan stress decreased gradually with increasing temperature. The resistance to climb-pass of particles was independent of particles size for a fixed volume fraction although the threshold for bowing and particles cutting are sensitive to the particles dimensions. The smaller particles cutted by dislocations. This behavior of dislocations in this alloy was explained in terms of the small value antiphase boundary energy. The dislocation networks wrere more extensive in spesimens subjected to stress relaxation and there were numerous areas that have a high denstiy of jogged dislocation. This experiment results indicate that the rate controlling stress relaxation process is the climb of edge dislocation over particles.

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A Study of Threshold stress during High Temperature Creep of $\textrm{BN}_f$/Al-5, wt% Mg Metal Matrix Composite (BN 입자 강화 Al-5wt% Mg 기지 복합재료의 고온 크립 변형에서의 임계응력 해석)

  • Song, M.H.;Kwon, H.;Kim, Y.S.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2000.04a
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    • pp.187-191
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    • 2000
  • High temperature creep behaviour of Al-5 wt% Mg alloy reinforced with 7.5% BN flakes was studied. The composite specimens showed two main creep characteristics : (1) the value of the apparent stress exponent of the composite was high and varied with applied stress (2) the apparent activation energy for creep was much larger than that for self-diffusion in aluminum The true stress exponent of the composite was set equal to 5. Temperature dependence of the threshold stress of the composite was very strong. Which could not be rationalized by allowing for the temperature dependence of the elastic modulus change. AIN particles which were incorporated into the Al matrix during fabrication of the composite by the PRIMEXTM method were found to be effective barriers to dislocation motion and to give rise the threshold stress during creep of the composite

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Experimental Evaluation of Fatigue Threshold for SA-508 Reactor Vessel Steel (SA-508 압력용기용 강에 대한 피로균열성장 하한계 조건의 실험 평가)

  • Rhee, Hwan-Woo
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.11 no.4
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    • pp.160-167
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    • 2012
  • This paper is concerned with a particular fracture mechanics parameter ${\Delta}K_{th}$, known as the 'threshold stress intensity range', or 'fatigue threshold'. This threshold ${\Delta}K_{th}$ constitutes, as it were, a hinge between the notion of crack initiation and the notion of crack growth. It has often been thought that, like the endurance limit, it could be an intrinsic criterion of the material. The study was conducted on a SA-508 pressure vessel steel used in the nuclear power industry. This material exhibits a typical threshold effect in the range of the crack growth rates which were determined; that is, below approximately $da/dN=10^{-6}mm/cycle$, the slope of the da./dN versus ${\Delta}K$ curve is almost vertical. The value of ${\Delta}K_{th}$ was determined at a growth rate of $10^{-7}$ mm/cycle according to the ASTM Standard for threshold testing. The fatigue threshold values are in the range 21 $kg/mm^{3/2}$ to 12 $kg/mm^{3/2}$ depending on the stress ratio effect.

Effect of Neuro-Feedback Training and Transcutaneous Electrical Nerve Stimulation (TENS) in Stress, Quantitative Sensory Threshold, Pain on Tension Type Headache

  • Lee, Young-Sin;Lee, Dong-Jin;Han, Sang-Wan;Kim, Kyeong-Tae
    • The Journal of Korean Physical Therapy
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    • v.26 no.6
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    • pp.442-448
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    • 2014
  • Purpose: The objective of this study is to evaluate the effect of neuro-feedback training and transcutaneous electrical nerve stimulation (TENS) on stress, quantitative sensory threshold and pain in patients suffering from tension type headache. Methods: 22 participants who passed the preliminary evaluation were enrolled in the study and 11 participants were randomly assigned to each group. The control group (n=11) was subject to the TENS treatment of which was composed of a 20-minute session for 5 times a week during 4 weeks, and the experimental group (n=11) was subject to both neuro feedback training and TENS treatment for 10 minutes a day and 5 days a week during 4 weeks. The Perceived Stress Scale (PSS) was used to measure a level of stress and the quantitative sensory testing (QST) was used for the measurement of cold pain threshold (CPT) and heat pain threshold (HPT); A degree of pain was evaluated through the headache impact test-6 (HIT-6). Results: In comparision of all dependent variables between the control and subject groups, there were significant differences in stress, quantitative sensory threshold and pain after the treatment (p<0.05), and the experimental group showed significant differences in stress, CPT, HPT and pain (p<0.05) and the control group showed only a significant difference in HPT (p<0.05). Conclusion: Findings of this study demonstrate that the concomitant administration of the TENS treatment and neuro feedback training is effective on alleviation of stress, quantitative sensory threshold and pain in patients with tension type headache.

Degradation of Polycrystalline Silicon Thin Film Transistor by Inducing Stress (스트레스 인가에 의한 다결정 실리콘 박막 트랜지스터의 열화 특성)

  • 백도현;이용재
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.322-325
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    • 2000
  • N-channel poly-Si TFT, Processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after electrical stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5$\mu\textrm{m}$ and 3$\mu\textrm{m}$ poly-Si TFTs are 3.3V, 3.V respectively. With the threshold voltage shia the degradation of transconductance(G$\_$m/) and subthreshold swing(S) is also observed.

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Determination of the Threshold Stress Intensity Factor in Fatigue Crack Growth Test (피로균열성장시험에서 하한계 응력확대계수의 결정)

  • 허성필;석창성;양원호
    • Journal of the Korean Society of Safety
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    • v.15 no.3
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    • pp.1-6
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    • 2000
  • In fatigue crack growth test, it is important not only to analyze characteristics of fatigue crack growth but also to determine the threshold stress intensity factor, ${\Delta}K_{th}$. which is the threshold value of fatigue crack growth. Linear regression analysis using fatigue test data near the threshold is suggested to determine the ${\Delta}K_{th}$ in the standard test method but the ${\Delta}K_{th}$ can be affected by a fitting method. And there are some limitations on the linear regression analysis in the case of small number of test data near the threshold. The objective of this study is to investigate differences of the ${\Delta}K_{th}$ due to regression analysis method and to evaluate the relative error range of the ${\Delta}K_{th}$ in same fatigue crack growth test data.

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Stress-Bias Effect on Poly-Si TFT's on Glass Substrate

  • Baek, Do-Hyun;Yong Jae lee
    • Proceedings of the IEEK Conference
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    • 2000.07b
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    • pp.933-936
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    • 2000
  • N-channel poly-Si TFT, processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5um and 3um poly-Si TFT’s are 3.3V, 37V respectively. With the threshold voltage shift, the degradation of transconductance and subthreshold swing is also observed.

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Effects of Manual Lymph Drainage on the Activity of Sympathetic Nervous System, Anxiety, Pain, and Pressure Pain Threshold in Subjects with Psychological Stress

  • Kim, Sung-Joong
    • The Journal of Korean Physical Therapy
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    • v.26 no.6
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    • pp.391-397
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    • 2014
  • Purpose: The aim of this study was to investigate the effects of manual lymph drainage (MLD) on the activity of sympathetic nervous system, anxiety, pain and pressure pain threshold in subjects with psychological stress. Methods: Twenty-nine subjects with psychological stress were randomly assigned to experimental (MLD) and control (rest) groups. This study was performed as a controlled, randomized study using spectral analysis of electrocardiographic (ECG) activities, the State-Trait Anxiety Inventory (STAI), Visual Analogue Scale (VAS) and Pressure Pain Threshold (PPT). Results: Heart rate variability differed significantly between the experimental and control groups (p<0.05). Anxiety and pain showed positive change in both group but it were not showed statically differences. The pressure pain threshold in the upper trapezius muscle was increased in the experimental group (p<0.05). Conclusion: These findings indicate that the application of MLD was effective in reducing the activity of the sympathetic nervous system, anxiety, pain, and increasing the PPT.

Hot-Carrier-Induced Degradation in Submicron MOS Transistors (Submicron MOS 트랜지스터의 뜨거운 운반자에 의한 노쇠현상)

  • 최병진;강광남
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.7
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    • pp.780-790
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    • 1988
  • We have studied the hot-carrier-induced degradation caused by the high channel electric field due to the decrease of the gate length of MOSFET used in VLSI. Under DC stress, the condition in which maximum substrate current occures gave the worst degradation. Under AC dynamic stress, other conditions, the pulse shape and the falling rate, gave enormous effects on the degradation phenomena, especially at 77K. Threshold voltage, transconductance, channel conductance and gate current were measured and compared under various stress conditions. The threshold voltage was almost completely recovered by hot-injection stress as a reverse-stress. But, the transconductance was rapidly degraded under hot-hole injection and recovered by sequential hot-electron stress. The Si-SiO2 interface state density was analyzed by a charge pumping technique and the charge pumping current showed the same trend as the threshold voltage shift in degradation process.

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