Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2000.06b
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- Pages.322-325
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- 2000
Degradation of Polycrystalline Silicon Thin Film Transistor by Inducing Stress
스트레스 인가에 의한 다결정 실리콘 박막 트랜지스터의 열화 특성
Abstract
N-channel poly-Si TFT, Processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after electrical stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5