• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.322-325
• /
• 2000

N-channel poly-Si TFT, Processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after electrical stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5$\mu\textrm{m}$ and 3$\mu\textrm{m}$ poly-Si TFTs are 3.3V, 3.V respectively. With the threshold voltage shia the degradation of transconductance(G$\_$m/) and subthreshold swing(S) is also observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.40-40
• /
• 2009

The electrical characteristic of the conventional self-aligned polycrystalline silicon (poly-Si) TFTs are known to present several undesired effects such as large leakage current, kink effect and hot-carrier effects. In this paper, LTPS TFTs with different GOLDD length were fabricated and investigated the effect of the GOLDD. GOLDD length of 1, 1.5 and $2{\mu}m$ were used, while the thickness of the gate dielectrics($SiN_x/SiO_2$) was fixed at 65nm(40nm/25nm). The electrical characteristics show that the kink effect is reduced at the LTPS TFTs, and degradation from the hot-carrier effect was also decreased by increasing GOLDD length.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2002.02a
• /
• pp.297-299
• /
• 2002

To wind a HTS (High Temperature Superconductor) tape conductor on a bobbin, double pancake winding technique is widely used to reduce number of splicing contacts between conductor pieces. However, this makes some Ic (critical current) degradation on kink points which is unavoidable. This paper describes the two ways of winding; usual double pancake and soldered double pancake. Characteristics of the two windings are measured and compared.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.8
• /
• pp.126-132
• /
• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.3
• /
• pp.89-95
• /
• 1996

In this ppaer, temeprature dependent transport and heat transport models have been incorperated to the two dimensional device simulator SNU-2D provides a solid bse for nonisothermal device simulation. As an example to study the nonisothermal problem. we consider SOI MOSFET's I-V characteristics have been simulated and compared with the measurements. It is shown that negative slopes in the Ids-Vds characteristics are casused by the temperature dependence of the saturation velocity and the degradation of the temperature dependence mobility. Also it is shown that the kink effect occurs when impact ionization near the drain produces a buildup of holes in this isolated device island, and the hysteresis is caused by the creation of holes in the channel and their flow to the source.

• Applied Chemistry for Engineering
• /
• v.8 no.6
• /
• pp.1014-1021
• /
• 1997

Studies were carried out on the preparation of several kinds of pulps from Sponge gourd fiber by KP, ASP, SP PAP, AP and addition of AQ pulping process. These unbeaten and beaten pulping fibers were observed their characteristics and fiber structure by SEM, FQA, Image analyzer and Micro projector. The results were summarized as follows; 1) The cooking condition which is the possible defibrilation of Shives are KP base($160^{\circ}C$, 2hr.), ASP base($155^{\circ}C$, 4hr.), PAP base($160^{\circ}C$, 1hr.). From the results, the kappa no. had the range of 12, 25, 10 each other. 2) The pulp yields of sponge gourd fiber obtained the range of KP 50~55%, ASP&60~70% and PAP 45~50%. SP base have the highest and contnets of KP&PAP base are much the same as woods. 3) Increasing amount of NaOH on Pulping was accelerated the defibrilation of Shives and was changed a morphology of pulping fiber quality such as fiber length, curl and kink index. 4) Addition of AQ on pulping process of sponge gourd fiber had a affect to raise the rate of delignification while protecting cellullosic components against degradation, especially defibrilation was very excellent, beated pulp much more easily and increased the fibrilation. 5) ASP system have higher bulk density, fiber bonding and protecting cellullosic components against degradation than KP or PAP. 6) The color reactions of the "C" stain solution showed blue or blue-gray with clean and transparency thin cell wall.