Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2000.07b
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- Pages.933-936
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- 2000
Stress-Bias Effect on Poly-Si TFT's on Glass Substrate
- Baek, Do-Hyun (Dept. of Electronics Dong-eui University) ;
- Yong Jae lee (Dept. of Electronics Dong-eui University)
- Published : 2000.07.01
Abstract
N-channel poly-Si TFT, processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5um and 3um poly-Si TFT’s are 3.3V, 37V respectively. With the threshold voltage shift, the degradation of transconductance and subthreshold swing is also observed.
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