• Title/Summary/Keyword: Threshold model

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Fuzzy-based Threshold Controlling Method for ART1 Clustering in GPCR Classification (GPCR 분류에서 ART1 군집화를 위한 퍼지기반 임계값 제어 기법)

  • Cho, Kyu-Cheol;Ma, Yong-Beom;Lee, Jong-Sik
    • Journal of the Korea Society of Computer and Information
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    • v.12 no.6
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    • pp.167-175
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    • 2007
  • Fuzzy logic is used to represent qualitative knowledge and provides interpretability to a controlling system model in bioinformatics. This paper focuses on a bioinformatics data classification which is an important bioinformatics application. This paper reviews the two traditional controlling system models The sequence-based threshold controller have problems of optimal range decision for threshold readjustment and long processing time for optimal threshold induction. And the binary-based threshold controller does not guarantee for early system stability in the GPCR data classification for optimal threshold induction. To solve these problems, we proposes a fuzzy-based threshold controller for ART1 clustering in GPCR classification. We implement the proposed method and measure processing time by changing an induction recognition success rate and a classification threshold value. And, we compares the proposed method with the sequence-based threshold controller and the binary-based threshold controller The fuzzy-based threshold controller continuously readjusts threshold values with membership function of the previous recognition success rate. The fuzzy-based threshold controller keeps system stability and improves classification system efficiency in GPCR classification.

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Developing the Optimal Decision-Making Process through Preventive Maintenance Policy Based on the Reliability Threshold for Leased Equipment (대여장비의 신뢰도 기반 예방보전 정책을 통한 최적 의사결정 과정 개발)

  • Bae, Kiho;Lee, Juhyun;Park, Seonghwan;Ahn, Suneung
    • Journal of Applied Reliability
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    • v.17 no.3
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    • pp.246-255
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    • 2017
  • Purpose: This study proposes the optimal PM (preventive maintenance) policy of leased equipment for lessee's decision-making using two types of reliability condition. Methods: We consider reliability threshold based PM model. Equipment reliability is estimated and used as condition variable. The effect of repair for maintenance is imperfect and represented by age reduction factor. Results: We provide two PM policies. Policy 1 is focused on minimized total cost. This policy guarantees reliability threshold until last maintenance action. Policy 2 focus on maintaining reliability threshold during leased period. The proposed approach provides optimal reliability threshold under number of PM. Through result, we finally construct decision-making process for lessee using reliability threshold and end of reliability. Conclusion: This study provides two PM policy for lessee's decision-making. Through numerical example, we get a result of optimal reliability threshold, number of PM, optimum alternative under lessee's reliability condition.

A study on ITZ percolation threshold in mortar with ellipsoidal aggregate particles

  • Pan, Zichao;Wang, Dalei;Ma, Rujin;Chen, Airong
    • Computers and Concrete
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    • v.22 no.6
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    • pp.551-561
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    • 2018
  • The percolation of interfacial transition zone (ITZ) in cementitious materials is of great importance to the transport properties and durability issues. This paper presents numerical simulation research on the ITZ percolation threshold of mortar specimens at meso-scale. To simulate the meso-scale model of mortar as realistically as possible, the aggregates are simplified as ellipsoids with arbitrary orientations. Major and minor aspect ratios are defined to represent the global shape characteristics of aggregates. Some algorithms such as the burning algorithm, Dijkstra's algorithm and Connected-Component Labeling (CCL) algorithm are adopted for identification of connected ITZ clusters and percolation detection. The effects of gradation and aspect ratios of aggregates on ITZ percolation threshold are quantitatively studied. The results show that (1) the ITZ percolation threshold is mainly affected by the specific surface area (SSA) of aggregates and shows a global decreasing tendency with an increasing SSA; (2) elongated ellipsoidal particles can effectively bridge isolated ITZ clusters and thus lower the ITZ percolation threshold; (3) as ITZ volume fraction increases, the bridging effect of elongated particles will be less significant, and has only a minor effect on ITZ percolation threshold; (4) it is the ITZ connectivity that is essentially responsible for ITZ percolation threshold, while other factors such as SSA and ITZ volume fraction are only the superficial reasons.

Relationship of Threshold Voltage Roll-off and Gate Oxide Thickness in Asymmetric Junctionless Double Gate MOSFET (비대칭형 무접합 이중게이트 MOSFET에서 산화막 두께와 문턱전압이동 관계)

  • Jung, Hakkee
    • Journal of IKEEE
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    • v.24 no.1
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    • pp.194-199
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    • 2020
  • The threshold voltage roll-off for an asymmetric junctionless double gate MOSFET is analyzed according to the top and bottom gate oxide thicknesses. In the asymmetric structure, the top and bottom gate oxide thicknesses can be made differently, so that the top and bottom oxide thicknesses can be adjusted to reduce the leakage current that may occur in the top gate while keeping the threshold voltage roll-off constant. An analytical threshold voltage model is presented, and this model is in good agreement with the 2D simulation value. As a result, if the thickness of the bottom gate oxide film is decreased while maintaining a constant threshold voltage roll-off, the top gate oxide film thickness can be increased, and the leakage current that may occur in the top gate can be reduced. Especially, it is observed that the increase of the bottom gate oxide thickness does not affect the threshold voltage roll-off.

Analytical Threshold Voltage Model of Ion-Implanted MOSFET (이온 주입된 Mosfet의 문턱 전압의 해석적 모델)

  • Lee, Hyo-Sik;Jin, Ju-Hyeon;Gyeong, Jong-Min
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.6
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    • pp.58-62
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    • 1985
  • Analytical threshold voltage model of small size ion-implanted MOSFET's is proposed. Yau's model which is only applicable to MOSFET's with constant doping concentration was modified to handle the MOSFET's with nonuniform channel doping concentration and bird's beak, whereby the short and narrow-channel effect was quantitively described. Threshold voltage model for short-channel MOSFET's was derived by approximating the SUPREM result of channel impurity profile to a 2-step profile, and the narrow width be-haviour was successfully described using thr'weighting factor'to accommodate the doping profile in the bird's beak region.

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Optimal Pipe Replacement Analysis with a New Pipe Break Prediction Model (새로운 파괴예측 모델을 이용한 상수도 관의 최적 교체)

  • Park, Suwan;Loganathan, G.V.
    • Journal of Korean Society of Water and Wastewater
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    • v.16 no.6
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    • pp.710-716
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    • 2002
  • A General Pipe Break Prediction Model that incorporates linear and exponential models in its form is developed. The model is capable of fitting pipe break trends that have linear, exponential or in between of linear and exponential trend by using a weighting factor. The weighting factor is adjusted to obtain a best model that minimizes the sum of squared errors of the model. The model essentially plots a best curve (or a line) passing through "cumulative number of pipe breaks" versus "break times since installation of a pipe" data points. Therefore, it prevents over-predicting future number of pipe breaks compared to the conventional exponential model. The optimal replacement time equation is derived by using the Threshold Break Rate equation by Loganathan et al. (2002).

A Bayesian Wavelet Threshold Approach for Image Denoising

  • Ahn, Yun-Kee;Park, Il-Su;Rhee, Sung-Suk
    • Communications for Statistical Applications and Methods
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    • v.8 no.1
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    • pp.109-115
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    • 2001
  • Wavelet coefficients are known to have decorrelating properties, since wavelet is orthonormal transformation. but empirically, those wavelet coefficients of images, like edges, are not statistically independent. Jansen and Bultheel(1999) developed the empirical Bayes approach to improve the classical threshold algorithm using local characterization in Markov random field. They consider the clustering of significant wavelet coefficients with uniform distribution. In this paper, we developed wavelet thresholding algorithm using Laplacian distribution which is more realistic model.

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An Optimal Threshold Control in an Open Network of Queues (개방대기 네트웍에서의 최적 Threshold 제어)

  • Kim, Sung-Chul
    • Journal of Korean Institute of Industrial Engineers
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    • v.17 no.2
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    • pp.107-113
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    • 1991
  • This article develops a control model for an open queueing network in terms of both the input and the output processes with stochastic intensities. The input and the output intensities are subject to some capacity limits and optimum control is characterized by a threshold type with a finite upper barrier. A discounted profit is used as a decision criteria, which is revenue minus operating and holding cost.

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Analysis of Subthreshold Characteristics for Device Parameter of DGMOSFET Using Gaussian Function

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.6
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    • pp.733-737
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    • 2011
  • This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.

Analytical Threshold Voltage Modeling of Surrounding Gate Silicon Nanowire Transistors with Different Geometries

  • Pandian, M. Karthigai;Balamurugan, N.B.
    • Journal of Electrical Engineering and Technology
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    • v.9 no.6
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    • pp.2079-2088
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    • 2014
  • In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.