Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 22 Issue 6
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- Pages.58-62
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- 1985
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- 1016-135X(pISSN)
Analytical Threshold Voltage Model of Ion-Implanted MOSFET
이온 주입된 Mosfet의 문턱 전압의 해석적 모델
- Lee, Hyo-Sik ;
- Jin, Ju-Hyeon (Dept. of Electrical Eng. and Electronic Eng., Korea advanced Institute of Science and Technology) ;
- Gyeong, Jong-Min
- Published : 1985.11.01
Abstract
Analytical threshold voltage model of small size ion-implanted MOSFET's is proposed. Yau's model which is only applicable to MOSFET's with constant doping concentration was modified to handle the MOSFET's with nonuniform channel doping concentration and bird's beak, whereby the short and narrow-channel effect was quantitively described. Threshold voltage model for short-channel MOSFET's was derived by approximating the SUPREM result of channel impurity profile to a 2-step profile, and the narrow width be-haviour was successfully described using thr'weighting factor'to accommodate the doping profile in the bird's beak region.
이온 주입된 소형 MOSFET소자에 대한 해석적 문턱 전압 모델이 유도되었다. 일정한 도우핑 농도를 갖는 MOSFET에 적용되는 Yau 모델을 implanted channel구조와 bird's beat구조의 MOSFET에 대하여 적합한 형태로 수정하여 short channel 현상과 narrow width 현상을 정량적으로 설명하였다. Channel영역의 불순물 분포를 SUPREM 결과에서 2-step profile로 근사시켜 문턱 전압의 short channel model을 제안하였다. Weighting factor를 사용하여 bird's beat 영역의 불순물 분포를 고려함으로써 narrow width 현상을 성공적으로 설명하였다.
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