• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.657-658
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• 2006

Although there are many numerical models to simulate fs laser ablation of metals, no model can analyze the ablation phenomena over a wide range of fluence. In this work, a numerical code for simulating the fs laser ablation phenomena of metals has been developed. The two temperature model is employed to predict the ablation rate and the crater shape of metals using phase explosion mechanism in the relatively high fluence regime. Also, the ultrashort thermoelastic model is used for the low fluence regime to account for spallation of the sample by high strain rate. It has been demonstrated that the thermoelastic stress generated within the sample can exceed the yield stress of the material even near the threshold fluence. Numerical computation results are compared with the experiment for Cu and Ni and show good agreement. Discussions are made on the hydrodynamic model considering phase change and hydrodynamic flow.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 방전 플라즈마 유기절연재료 초전도 자성체연구회
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• pp.47-53
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• 2004

The paper shows that the combination of the hardware, NI PCI 6110E board and the software, Fourier and continuous wavelet transform(CWT) can be used to implement for extracting the important features of the real-time signal. The results confirmed that CWT produces the fast computation enough for the application of the real-time signal processing except the negligible time delay. In denoising case, because of the lack of translation invariance of wavelet basis, traditional wavelet thresholding leads to pseudo-Gibbs phenomena in the vicinity of discontinuities of signal. In this paper, in order to reduce the pseudo-Gibbs phenomena, wavelet coefficients are threshold and reconstruction algorithm is implement through shift-invariant gibbs free denoising algorithm based on wavelet transform footprint. The proposed algorithm can potentially be extended to more general signals like piecewise smooth signals and represents an effective solution to problems like signal denoising.

• 한국음향학회지
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• 제25권7호
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• pp.333-338
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• 2006

수중 방사소음 측정시 낮은 신호대 잡음비를 가지는 신호에 대해 유용한 신호를 얻기 위해서는 잡음제거가 이루어져야 한다. 본 논문은 잡음제거를 수행하기 위하여 Donoho 등에 의해 제안된 Translation-Invariant (TI) 웨이브렛 기반으로 다중 임계치 함수를 적용한 잡음제거 기법을 제안한다. 기존의 웨이브렛 잡음제거 기법은 특이점 부근에서 Pseudo-Gibbs 현상이 발생하는 문제점이 있다 TI 웨이브렛은 신호의 특성 위치를 변화시켜 Pseudo-Gibbs 현상을 제거한다. 그리고 배경잡음 및 외부잡음을 제거하기 위해 각 노드별 변형된 소프트 임계치를 적용한 다중 임계치 함수를 제안한다. 제안 기법의 타당성을 검토하기 위해 모의 시뮬레이션과 해상실험을 수행한 결과 신호대 잡음비가 23dB 및 18dB 이상 개선됨을 확인하였다.

• 전자공학회논문지D
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• 제36D권9호
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• pp.21-30
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• 1999

OSFET 소자의 펀치스루 현상 및 문턱전압의 roll-off 방지하는 효율적 방법으로 알려져 있는 halo 포켓 이온주입방법은 MOSFET 드레인 전류의 감소를 가져온다. Halo 구조 MOSFET의 드레인 전류 감소는 보통 문턱 전압의 증가로 설명되고 있으나, 실험적으로 드레인 전류의 감소는 문턱전압의 증가로 예상된 드레인 전류 감소 보다 크게 관찰되고 있다. 본 연구에서는 halo 도핑분포에 의해서 채널방향으로 생성되는 전계분포의 효과에 의한 드레인 전류의 감소를 분석하였다. 포켓 이온주입에 의한 halo MOSFET 소자의 유효 이동도 모델을 제시하였고, 유효 이동도의 감소가 드레인 전류의 추가적인 감소에 기여함을 보였다. 제시된 모델에 따른 소자의 특성이 실험결과와 일치함을 보였다.

• 한국산학기술학회논문지
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• 제10권6호
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• pp.1175-1179
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• 2009

본 논문은 대전입자형 디스플레이의 입자층과 상판과 하판의 전극간격(cell gap)으로 전압특성을 분석하여 에이징 전압 인가 전, 후의 응답속도를 측정하였다. 입자층이 증가할수록 비례하여 문턱/구동/항복 전압이 증가하였고 응답속도는 켈러입자와 검정입자의 q/m값의 차이로 문턱/항복 전압보다 구동전압에서의 응답속도가 빠른 것을 확인하였다. 응답속도는 레이저와 포토다이오드를 이용하여 광학특성으로 측정하였고 입자의 뭉침현상은 aging공정으로 최소화 하였다. 아직까지 대전입자형 디스플레이의 응답속도와 문턱/구동/항복 전압 및 입자주입층, cell gap, aging공정에 관하여 보고된 바 없으며 이에 상관관계를 평가하고 영향을 분석하였다.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• 한국표면공학회지
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• 제49권3호
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• pp.316-321
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• 2016

To study emission characteristics for dual-emission tandem organic light emitting display (OLED), we fabricated blue fluorescent OLED according to thickness variation of $MoO_x$ as charge generation layer and Al as cathode. The bottom emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness showed threshold voltage of 9, 7, 9 V, maximum current emission efficiency of 19.32, 23.18, 15.44 cd/A and luminance of $1,000cd/m^2$ at applied voltage of 17.6, 13.2, 16.5 V, respectively. The top emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness indicated threshold voltage of 13, 10, 13 V, maximum current emission efficiency of 0.17, 0.23, 0.16 cd/A and luminance of $50cd/m^2$ at applied voltage of 22.6, 16.5, 20.1 V, respectively. In case of thicker or thinner than $MoO_x$ of 3 nm, the emission characteristics were decreased because of mismatching of electron and hole in emission layer. The bottom emission characteristics of OLED with Al 15, 20, 25 nm thickness showed threshold voltage of 8, 8, 7 V, maximum current emission efficiency of 18.42, 22.98, 23.18 cd/A and luminance of $1000cd/m^2$ at applied voltage of 16.2, 13.9, 13.2 V, respectively. The reduction of threshold voltage and increase of maximum current emission efficiency are caused by the increase of current injection according to increase of Al cathode thickness. The top emission characteristics of OLED with Al 15, 20, 25 nm thickness indicated threshold voltage of 7, 7, 8 V, maximum emission luminance of 371, 211, $170cd/m^2$, respectively. The top emission OLED of Al cathode with 15 nm thickness showed maximum luminance and it decreased at thickness of 20 nm. These phenomena are caused by the decrease of intensity of emitted light by reduction of optical transmittance according to increase of Al cathode thickness.

• 대한기계학회논문집B
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• 제27권8호
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• pp.1158-1164
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• 2003

Steady-state structure and acoustic-pressure responses of $H_2$/Air counterflow diffusion flames are studied numerically with a detailed chemistry in view of acoustic instability. The Rayleigh criterion is adopted to judge acoustic amplification or attenuation from flame responses. Steady-state flame structures are first investigated and flame responses to various acoustic-pressure oscillations are numerically calculated in near-equilibrium and near-extinction regimes. The acoustic responses of $H_2$/Air flame show that the responses in near-extinction regime always contribute to acoustic amplification regardless of acoustic-oscillation frequency Flames near extinction condition are sensitive to pressure perturbation and thereby peculiar nonlinear responses occur, which could be a possible mechanism in generating the threshold phenomena observed in combustion chamber of propulsion systems.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.285-287
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• 2009

When the laser diode is operated with continuous current, the light intensity from the laser diode deceases with time due to the temperature rise in the active layer. The phenomena, which is often called as DROOP, should be minimized in order to be used as a light source for the laser beam printer. We experimently examined the influences of the laser parameters such as threshold current, differential quantum efficiency on droop. It was found that decreasing the differential quantum efficiency of the laser diode is the effective way to minimize droop.