• Title/Summary/Keyword: Threshold Characteristics

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Side Slip Angle Based Control Threshold of Vehicle Stability Control System

  • Chung Taeyoung;Yi Kyongsu
    • Journal of Mechanical Science and Technology
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    • v.19 no.4
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    • pp.985-992
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    • 2005
  • Vehicle Stability Control (VSC) system prevents vehicle from spinning or drifting out mainly by braking intervention. Although a control threshold of conventional VSC is designed by vehicle characteristics and centered on average drivers, it can be a redundancy to expert drivers in critical driving conditions. In this study, a manual adaptation of VSC is investigated by changing the control threshold. A control threshold can be determined by phase plane analysis of side slip angle and angular velocity which is established with various vehicle speeds and steering angles. Since vehicle side slip angle is impossible to be obtained by commercially available sensors, a side slip angle is designed and evaluated with test results. By using the estimated value, phase plane analysis is applied to determine control threshold. To evaluate an effect of control threshold, we applied a 23-DOF vehicle nonlinear model with a vehicle planar motion model based sliding controller. Controller gains are tuned as the control threshold changed. A VSC with various control thresholds makes VSC more flexible with respect to individual driver characteristics.

A Study on the Characteristics of Phonation Threshold Pressure and Phonation Threshold Airflow of Patients with Functional Voice Disorder (기능적 음성장애인의 발성역치압력과 발성역치기류 특성 연구)

  • Lee, Inae;Yun, Joowon;Hwang, Youngjin
    • Phonetics and Speech Sciences
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    • v.5 no.1
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    • pp.63-69
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    • 2013
  • This study attempted to investigate the characteristics of Phonation Threshold Pressure and Phonation Threshold Airflow of Patients who have Functional voice disorder. 50 subjects participated in study (32 subjects were patients who had functional voice disorders and 20 subjects were normal adults). The PAS (Phonatory aerodynamic system, model 6600, KAY electronics, Inc.) was used to measure the data and to do the analysis. Data from the Phonation Threshold Pressure was measured using voicing efficiency of the PAS protocol. Data from the Phonation Threshold Airflow was measured using Maximum Sustained Phonation of the PAS protocol. Those were used because of the ease of phonation. The results of this study showed that the differences in Phonation Threshold Pressure and Phonation Threshold Airflow between patients who had functional voice disorder and normal adults could be significant index. Patients who had functional voice disorder showed more higher figures than normal adults. These results suggest that Phonation Threshold Pressure and Phonation Threshold Airflow are very useful in diagnosing the voice disorder. The measured data also provided useful information for diagnosing patients with vocal fold diseases.

Analysis of Transport Characteristics for FinFET Using Three Dimension Poisson's Equation

  • Jung, Hak-Kee;Han, Ji-Hyeong
    • Journal of information and communication convergence engineering
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    • v.7 no.3
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    • pp.361-365
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    • 2009
  • This paper has been presented the transport characteristics of FinFET using the analytical potential model based on the Poisson's equation in subthreshold and threshold region. The threshold voltage is the most important factor of device design since threshold voltage decides ON/OFF of transistor. We have investigated the variations of threshold voltage and drain induced barrier lowing according to the variation of geometry such as the length, width and thickness of channel. The analytical potential model derived from the three dimensional Poisson's equation has been used since the channel electrostatics under threshold and subthreshold region is governed by the Poisson's equation. The appropriate boundary conditions for source/drain and gates has been also used to solve analytically the three dimensional Poisson's equation. Since the model is validated by comparing with the three dimensional numerical simulation, the subthreshold current is derived from this potential model. The threshold voltage is obtained from calculating the front gate bias when the drain current is $10^{-6}A$.

The characteristics of D.C. switching threshold voltage for amorphous $As_{10}Ge_{15}Te_{75}$ thin film (비정질 $As_{10}Ge_{15}Te_{75}$박막의 D.C. 스위칭 임계전압 특성)

  • 이병석;이현용;이영종;정홍배
    • Electrical & Electronic Materials
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    • v.9 no.8
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    • pp.813-818
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    • 1996
  • Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

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An Investigation of Con01 Threshold of Vehicle Stability Control System (제어시점에 따른 차량 안정성 제어 시스템의 제어 경향)

  • Chung, Tae-Young;Yi, Kyong-Su
    • Transactions of the Korean Society of Automotive Engineers
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    • v.13 no.5
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    • pp.195-201
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    • 2005
  • In conventional Vehicle Stability Control (VSC) System, a control threshold is designed by average driver characteristics. Despite the stabilizing effort, VSC causes redundancy to an expert driver. An advanced VSC which has flexibility on its control property is proposed in this study. By using lateral velocity estimator, a control threshold is determined on side slip angle and angular velocity phase plane. Vehicle planar motion model based sliding controller is modified with respect to various control thresholds. The performance of the proposed VSC algorithm has been investigated by human-in-the-loop simulation using a vehicle simulator. The simulation results show that the control threshold has to be determined with respect to the driver steering characteristics. A VSC with variable control thresholds would provide an improvement compared to a VSC with a constant threshold.

Fuzzy Threshold Inference of a Nonlinear Filter for Color Sketch Feature Extraction (컬러 스케치특징 추출을 위한 비선형 필터의 퍼지임계치 추론)

  • Cho Sung-Mok;Cho Ok-Lae
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.3
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    • pp.398-403
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    • 2006
  • In this paper, we describe a fuzzy threshold selection technique for feature extraction in digital color images. this is achieved by the formulation a fuzzy inference system that evaluates threshold for feature configurations. The system uses two fuzzy measures. They capture desirable characteristics of features such as dependency of local intensity and continuity in an image. We give a graphical description of a nonlinear sketch feature extraction filter and design the fuzzy inference system in terms of the characteristics of the feature. Through the design, we provide selection method on the choice of a threshold to achieve certain characteristics of the extracted features. Experimental results show the usefulness of our fuzzy threshold inference approach which is able to extract features without human intervention.

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Threshold Voltage Properties of OFET with CuPc Active Material

  • Lee, Ho-Shik;Kim, Seong-Geol
    • Journal of information and communication convergence engineering
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    • v.13 no.4
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    • pp.257-263
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    • 2015
  • In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO2 as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at VDS = -80 V.

Effects of Offset Gate on Programing Characteristics of Triple Polysilicon Flash EEPROM Cell

  • Kim, Nam-Soo;Choe, Yeon-Wook;Kim, Yeong-Seuk
    • Journal of Electrical Engineering and information Science
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    • v.2 no.3
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    • pp.132-138
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    • 1997
  • Electrical characteristics of split-gate flash EEPROM with triple polysilicon is investigated in terms of effects of floating gate and offset gate. In order to search for t the effects of offset gate on programming characteristics, threshold voltage and drain current are studied with variation of control gate voltage. The programming process is believed to depend on vertical and horizontal electric field as well as offset gate length. The erase and program threshold voltage are found to be almost constant with variation of control gate voltage above 12V, while endurance test indicates degradation of program threshold voltage. With increase of offset gate length, program threshold voltage becomes smaller and the drain source voltage just after program under constant control gate voltage becomes higher.

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Comparison of Current-Voltage Characteristics of Nanosheet FET and FinFET (Nanosheet FET와 FinFET의 전류-전압 특성 비교)

  • Ahn, Eun Seo;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.05a
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    • pp.560-561
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    • 2022
  • In this paper, current-voltage characteristics of various types of Nanosheet FET (NSFET) and FinFET are simulated with 3D device simulator. The threshold voltage and subthreshold swing extracted from the simulated current-voltage characteristics of NSFET and FinFET were compared. Both of threshold voltage and drain current of NSFET are higher than those of FinFET. The subthreshold voltage swing (SS) of NSFET is steeper than that of FinFET.

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Analysis of Subthreshold Characteristics for Device Parameter of DGMOSFET Using Gaussian Function

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.6
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    • pp.733-737
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    • 2011
  • This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.