• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1349_1350
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• 2009

Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Bulletin of the Korean Chemical Society
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• 제35권11호
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• pp.3299-3302
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• 2014

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.118-121
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• 1999

PLZT thin films were fabricated with different energy density by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Sr substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, 200mTorr $O_2$ pressure for 2 J/$\textrm{cm}^2$ laser energy density. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{r}$=1289.9 P-E hysteresis loop of 14/ 50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/50 PLZT thin film was 10/ sup -7/=A/$\textrm{cm}^2$.>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.239-242
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• 1998

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$ (SCT) thin films are deposited on Pt-coated electrode using RF magnetron sputtering method at various substrate temperature. Dielectric constant of SCT thin films is increased with increased as the deposition temperature and changes almost linearly in temperature ranges from -80 to +90[$^{\circ}C$]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.ure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.379-382
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• 1998

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The Mic개structure, dielectric and electrical properties of BST thin films were investigated with sputtering pressure. Dielectric constant and dielectric loss of the deposited thin film at sputtering pressure of 5 mTorr were about 91 and 1.9(%), respectively. Increasing sputtering pressure, leakage current was increased. It was found that leakage current of BST thin films was depended on the sputtering pressure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.244-247
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• 1999

The(Sr$\sub$0.85/Ca$\sub$0.15/) TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at room temperature is close to stoichiometry(1.102 in A/B ratio). Also, SCT thin films deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$].The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$].

• 한국결정성장학회지
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• 제6권2호
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• pp.177-184
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• 1996

본연구에서는 금속타겟을 이용한 반응성 스퍼터링법을 이용하여 PZT 박막의 전극 및 계면 특성의 개선을 위해, $Pt/SiO_{2}/Si$과 $Ir/SiO_{2}/Si$기판을 각각 사용하였으며, buffer layer로는 $PbTiO_{3}$을 이용하였다. Pt하부전극을 이용하여 PZT 박막제조시 randomly oriented PZT 박막이 얻어졌으나, buffer layer를 이용한 경우 (100)으로 배향된 결정성이 좋은 PZT 박막을 얻을 수 있었다. Ir하부전극을 이용한 경우, buffer layer증착에 따른 PZT 박막의 상형성이 다소 증진되었으며, Pt하부전극의 경우에 비해 잔류분극의 증가와 항전계의 감소를 관찰할 수 있었다. PZT 박막제조시 buffer layer의 이용에 따라 유전율이 증가함을 알 수 있었으며, 또한 Ir하부전극의 경우가 Pt하부전극의 경우보다 더 좋은 유전특성이 얻어졌다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.14-16
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• 1995

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ co-ramic thin films were formed by spin coating method on Pt/$SiO_2$/Si substrate at 4000[rpm] for 30 [sec]. Coated specimens were dried on the hot-plate at 400[$^{\circ}C$] for 10[min]. The coating process was repeated 6 times and then sintered at temperature between 500 ~ 800[$^{\circ}C$] for 1 hour. The ferroelectric perovskite phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ thin film sintered at 700[$^{\circ}C$] for 1hour showed good dielectric constant (2133) and dielectric loss (2.2[%]) Properties. The switching voltage, switching time and leakage currents density were 3.0[V], 1.7[${\mu}$sec] , 160[pA/$\textrm{cm}^2$] repectively.