Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Microstructure Electrical Prperties of (Ba, Sr)TiO$_3$[BST] Thin Films with Sputtering Pressure

Sputtering 압력에 따른 (Ba,Sr)TiO$_3$[BST] 박막의 구조 및 전기적 특성

  • 신승창 (광운대학교 전자재료공학과) ;
  • 이문기 (광운대학교 전자재료공학과) ;
  • 류기원 (여주대학 전자과) ;
  • 배선기 (시립인천대학교 전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 1998.06.01
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Abstract

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The Mic개structure, dielectric and electrical properties of BST thin films were investigated with sputtering pressure. Dielectric constant and dielectric loss of the deposited thin film at sputtering pressure of 5 mTorr were about 91 and 1.9(%), respectively. Increasing sputtering pressure, leakage current was increased. It was found that leakage current of BST thin films was depended on the sputtering pressure.

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