Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

A Study on Characteristic of the 14/50/50 PLZT Thin Film for DRAM Capacitor

고집적 DRAM소자용 14/50/50 PLZT 박막의 특성에 관한 연구

  • 박용범 (연세대학교 전기공학과) ;
  • 장낙원 (연세대학교 전기공학과) ;
  • 백동수 (한국과학기술연구원 박막기술연구센터) ;
  • 마석범 (용인송담대학 전기설비과) ;
  • 최형욱 (경원대학교 전기전자공학부) ;
  • 박창엽 (연세대학교 전기공학과)
  • Published : 1999.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

PLZT thin films were fabricated with different energy density by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Sr substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, 200mTorr $O_2$ pressure for 2 J/$\textrm{cm}^2$ laser energy density. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{r}$=1289.9 P-E hysteresis loop of 14/ 50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/50 PLZT thin film was 10/ sup -7/=A/$\textrm{cm}^2$.>.

Keywords