• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.02a
• /
• pp.250-250
• /
• 2008

• Journal of the Korean Solar Energy Society
• /
• v.28 no.2
• /
• pp.58-63
• /
• 2008

This study has analysed power output characteristics of transparent thin-film PV module depending on incidence angle and azimuth. The experiment results showed power outputs of transparent thin-film PV module applied to full-scale mock up model on slope of $90^{\circ},\;30^{\circ},\;0^{\circ}$ to the south. The simulation results was evaluated power outputs of transparent thin-film PV module depending on incidence angle and azimuth after calibrating the experimental and computed data. As a result. the best power output performance of transparent thin-film PV module was obtained at slope of $30^{\circ}$ to the south, producing the annual power output of 977kWh/kWp. The annual power output data demonstrated that the PV module with a slope of $30^{\circ}$ could produce a 68 % higher power output than that with a slope of $90^{\circ}$ with respect to the inclined slope of the module, Furthermore, the PV module facing south showed a 22 % higher power output than that facing to the east in terms of the angle of the azimuth, Specipically. the varying power output with incidence angle of PV module can be resulted from the influence of incidence angle modifier of glass on PV module. That is, the solar energy transmission can be reduced as an increase of incidence angle of PV module. Therefore, when the inclined slope of the PV module was over $70^{\circ}$ there was a significant reduction of power output, and this was caused by the decrease of solar energy transmission in the transparent thin-film PV module.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.49.2-49.2
• /
• 2010

Polycrystalline CdTe thin films for solar cell continues to be a promising material for the development of cost effective and reliable photovoltaic processes. The two key advantages of this material are its high optical absorption coefficient and its near ideal band gap for photovoltaic conversion efficiency of 1.4-1.5 eV. In this study we made the CdTe thin films for solar cell application which was deposited on the glass substrates using a modified chemical spray method at low temperature. This process does not require the sophisticated and expensive vacuum systems. The prepared CdTe films were characterized with the aid of scanning electron microscope (SEM), UV-visible spectrophotometer, and X-ray diffraction spectrometer (XRD). Following are results of a study on the "Human Resource Development Center for Economic Region Leading Industry" Project, supported by the Ministry of Education, Science & Tehnology(MEST) and the National Research Foundation of Korea(NRF).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.286-286
• /
• 2011

최근 폴리머를 기판으로 하는 Flexible TFT (thin film transistor)나 3D-ULSI (three dimensional ultra large-scale integrated circuit)에서 높은 에너지 소비효율과, 빠른 반응 속도를 실현 시키기 위해 낮은 비저항(resistivity)을 가지며, 높은 홀 속도(carrier hall mobility)를 가지는 다결정 반도체 박막(poly-crystalline thin film)을 만들고자 하고 있다. 이를 실현 시키기 위해서는 높은 온도에서 장시간의 열처리가 필요하며, 이는 폴리머 기판의 문제점을 야기시킬 뿐 아니라 공정시간이 길다는 단점이 있었다. 이에 반도체 박막의 재결정화 온도를 낮춰주는 metal (Al, Ni, Co, Cu, Ag, Pd etc.,)을 이용하여 결정화 시키는 방법이 많이 연구 되어지고 있지만, 이 또한 재결정화가 이루어진 반도체 박막 안에 잔여 금속(residual metal)이 존재하게 되어 비저항을 높이고, 홀 속도를 감소시키는 단점이 있다. 이에 본 실험은 HiPIMS (High power impulse magnetron sputtering)와 PIII and D (plasma immersion ion implantation and deposition) 공정을 복합시킨 프로세스로 적은양의 금속이온주입을 통하여 재결정화 온도를 낮췄을 뿐 아니라, 잔여 하는 금속의 양도 매우 적은 다결정 반도체 박막을 만들 수 있었다. 분석 장비로는 박막의 결정화도를 측정하기 위해 GAXRD (glancing angle X-ray diffractometer)를 사용하였고, 잔여 하는 금속의 양과 화학적 결합 상태를 알아보기 위해 XPS를 통해 분석을 하였다. 마지막으로 홀 속도와 비저항을 측정하기 위해 Hall measurement와 Four-point prove를 사용하였다.

• Journal of the Korean institute of surface engineering
• /
• v.35 no.1
• /
• pp.39-46
• /
• 2002

$Cu_2$$ZnSnS_4$(CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. Thin films were deposited on ITO glass substrates using a compact target which were made by $Cu_2$S, ZnS, SnS$_2$ powder at room temperature by rf magnetron sputtering and were annealed in the atmosphere of Ar and $S_2$(g). We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2$$ZnSnS_4$ composition. Structure was coarsened with increasing temperature and (112), (200), (220), (312) planes appeared to conform to all the reflection Kesterite structure. A (112) preferred orientation was advanced with increasing the annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.51 to 1.8eV as the annealing temperature increased. The optical absorption coefficient of the thin film was about $10^4$$cm^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.510-514
• /
• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.85.2-85.2
• /
• 2010

$Cu_2ZnSnSe_4$ (CZTSe) is one of candidate to alternate $Cu(In,Ga)Se_2$ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.2
• /
• pp.98-103
• /
• 2016

The surface morphology of the front transparent conductive oxide (TCO) films plays a vital role in amorphous silicon thin film solar cells (a-Si TFSCs) due to their high transparency, conductivity and excellent light scattering properties. Recently, plasma textured glass surface morphologies received much attention for light trapping in a-Si TFSCs. We report various plasma textured glass surface morphologies for the high efficiency of a-Si TFSCs. Plasma textured glass surface morphologies showed high rms roughness, haze ratio with micro- and nano size surface features and are proposed for future high efficiency of a-Si TFSCs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.7
• /
• pp.558-562
• /
• 2012

As an alternative energy, Dye-sensitized solar cells (DSSCs) have received much attention due to low cost manufacturing procedure and high energy consumption rate. Incorporating scattering centers in the nanocrystalline photoanode or additional scattering layers on the nanocrystalline photoanode is an effective way to enhance the light harvest efficiency of the photoanode and the performance of dye-sensitized solar cells (DSSCs). The light scattering abilities of these scattering layers also depend on the relative sizes and phase of the particles in the layers. A higher surface area is normally obtained using large particle sizes. Therefore, transparent high surface area $TiO_2$ layers and an additional scattering layer consisting of $TiO_2$-Rutile 500 nm paste with relatively larger particles are attractive. In this work, we investigates the applicability of a hybrid $TiO_2$ electrode (or a working electrode with a light scattering layer) in a DSSCs. We fabrication various thin film using $TiO_2$ paste 20 nm and $TiO_2$ paste 500 nm. As a result, the efficiency of the a single structure thin film was 3.35% and the efficiency as scattering layer of hybrid structure thin film was 4.36%, 4.73%.

• Current Photovoltaic Research
• /
• v.7 no.4
• /
• pp.103-110
• /
• 2019

Cu(In,Ga)₃Se₅ (β-CIGS) has a band gap of 1.35 eV, which is an optimum value for high solar-energy conversion efficiency. The effects of Cu and Ga content on the cell performance were investigated previously. However, the effect of Se content on the cell performance is not well understood yet. In this work, β-CIGS films were fabricated by three-stage co-evaporation of elemental sources with various Se fluxes at the third stage instead of at all stages. The average composition of five samples was Cu_1.05(In_0.59,Ga_0.41)3Se_y, where the stoichiometric y value is 5.03 and the stoichiometric Se/metal (Se/M) ratio is 1.24. We varied the Se/metal ratio in a range from 1.18 to 1.28. We found that the best efficiency was achieved when the Se/M ratio was 1.24, which is exactly the stoichiometric value where the CIGS grains on the CIGS surface were tightly connected and faceted. With the optimum Se/M ratio, we were able to enhance the cell efficiency of a β-CIGS solar cell from 9.6% to 12.0% by employing a Na₂S post deposition treatment. Our results indicate that Na₂S post deposition treatment is very effective to enhance the cell efficiency to a level on par with that in α-CIGS cell.