• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.366.1-366.1
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• 2014

The rare-earth oxides M2O3 (M=La, Pr, Gd) are good insulators due to their large band gap (3.9eV for Pr2O3, 5.6eV for Gd2O3), they have high dielectric constants (Gd2O3 K=16, La2O3 K=27, Pr2O3 K=26-30) and, compared to ZrO2 and HfO2, they have higher thermodynamic stability on silicon making them very attractive materials for high-K dielectric applications. Another attractive feature of some rare-earth oxides is their relatively close lattice match to that of silicon, offering the possibility of epitaxial growth and eliminating problems related to grain boundaries in polycrystalline films. Metal-organic chemical vapor deposition (MOCVD) has been preferred to PVD methods because of the possibility of large area deposition, good composition control and excellent conformal step coverage. Herein we report on the synthesis of rare-earth oxide complexes with designed alkoxide and aminoalkoxide ligand. These novel complexes have been characterized by means of FT-IR, elemental analysis, and thermogravimetric analysis (TGA).

• Current Photovoltaic Research
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• 제12권2호
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• pp.41-47
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• 2024

CIGS solar cells are thin film solar cells that have excellent light absorption coefficient and can be manufactured with high efficiency through the use of low materials. In Korea, they must pass KS certification for home and commercial installation. KS C 8562 is a standard for evaluating the durability of CIGS and thin film amorphous silicon solar modules and deals with contents such as light, temperature, humidity, and mechanical durability. Unlike general crystalline silicon solar modules, the CIGS solar module has a different behavior of output change through these environmental tests, so if it shows 90% or more of the rated output suggested by the manufacturer after the final test, it is judged to be a suitable product. In this paper, the output before and after individual tests was measured through the test method of KS C 8562 to observe the output change and to discover the vulnerabilities of the CIGS solar module when exposed to various environments. Through this, it was confirmed that humidity exposure was the most vulnerable and that it had output recovery characteristics for light (visible light and ultraviolet rays). This study attempted to present the output behavior characteristics and data of the CIGS module at the time when the high efficiency thin film photovoltaic module market is expected to be created in the future.

• Journal of Information Display
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• 제2권3호
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• pp.72-77
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• 2001

Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

• 한국결정성장학회지
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• 제15권6호
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• pp.260-262
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• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\mu}m$ thickness on $p^+$ seeding layer. The cells with $p^+$ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is 12.95%, with $V_{oc}=633mV,\;J_{sc}=26.5mA/cm^2$, FF = 77.15%. The $p^+$ seeding layer of the cell is $20{\mu}m$ thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.168-171
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• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\MU}m$ thickness on p+ seeding layer. The cells with p+ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is $12.95\%$, with Voc=633mV, $Jsc=26.5mA/cm^2,\;FF=77.15\%$. The $P^+$ seeding layer of the cell is $20{\mu}m$, thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.

• 한국재료학회지
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• 제18권9호
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• pp.507-510
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• 2008

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.344-349
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• 2020

Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.128.2-128.2
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• 2011

스테인레스 스틸 유연기판 위에 플라즈마 화학기상 증착법 (plasma enhanced chemical vapor deposition)을 이용하여 nip 구조의 미세결정질 실리콘 박막 태양전지 (microcrystalline silicon thin film solar cell)를 제조하고 i ${\mu}c$-Si:H광 흡수층과 p ${\mu}c$-Si:H 사이에 i a-Si:H 버퍼 층을 삽입하여 i/p 계면특성을 개선하고 이에 따른 태양전지 성능특성 변화를 조사하였다. ${\mu}c$-Si:H 박막으로 이루어진 i/p 계면에서의 구조적, 전기적 결함은 태양전지 내에서 생성된 캐리어의 재결합과 shunt resistance 감소를 초래하여 개방전압 (open circuit voltage) 및 곡선 인자 (fill factor)를 감소시키는 것으로 알려졌다. 제조된 미세결정질 실리콘 박막 태양전지는 SUS/Ag/ZnO:Al/n ${\mu}c$-Si:H/i ${\mu}c$-Si:H/p ${\mu}c$-Si:H 구조로 제작되었으며 i/p 계면 사이의 i a-Si;H 버퍼층 두께를 변화시키고 이에 따른 태양전지의 특성을 조사하였다. 태양전지의 구조적, 전기적 특성 변화는 Scanning Electron Microscope (SEM), UV-visible-nIR spectrometry, Photo IV와 Dark IV를 통하여 조사하였다.

• 전기학회논문지
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• 제56권1호
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• pp.112-116
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• 2007

We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.115-118
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• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.