Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Dynamic Characteristics of Multi-Channel Metal-Induced Unilaterally Precrystallized Polycrystalline Silicon Thin-Film Transistor Devices and Circuits

금속 유도 일측면 선결정화에 의해 제작된 다채널 다결정 실리콘 박막 트랜지스터 소자 및 회로의 전기적 특성 평가

  • Hwang, Wook-Jung (Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center) ;
  • Kang, Il-Suk (Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center) ;
  • Lim, Sung-Kyu (National Nanofab Center) ;
  • Kim, Byeong-Il (National Nanofab Center) ;
  • Yang, Jun-Mo (Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center) ;
  • Ahn, Chi-Won (Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center) ;
  • Hong, Soon-Ku (Department of Materials Science and Engineering, Chungnam National University)
  • 황욱중 (나노종합팹센터 정보전자부품소재기술혁신센터) ;
  • 강일석 (나노종합팹센터 정보전자부품소재기술혁신센터) ;
  • 임성규 (나노종합팹센터) ;
  • 김병일 (나노종합팹센터) ;
  • 양준모 (나노종합팹센터 정보전자부품소재기술혁신센터) ;
  • 안치원 (나노종합팹센터 정보전자부품소재기술혁신센터) ;
  • 홍순구 (충남대학교 재료공학과)
  • Published : 2008.09.27
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Abstract

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

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References

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