• 제목/요약/키워드: Thin Film Thickness

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실리콘 양자점 초격자 박막의 두께에 따른 구조적, 광학적 특성 분석 (Structural, Optical properties of layer thickness dependence for silicon quantum dots in SiC matrix superlattice)

  • 김현종;문지현;박상현;조준식;윤경훈;송진수;오병성;이정철
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 추계학술대회 논문집
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    • pp.398-398
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    • 2009
  • 텐덤 구조의 양자점 태양전지에서 양자점의 크기에 따라 에너지 밴드갭이 달라 넓은 대역의 태양광을 이용할 수 있다. 이러한 양자점의 크기는 증착 두께의 제어로 조절이 가능하다. Si과 C target을 이용한 RF Co-sputtering 법으로 각각 증착시간을 다르게 하여, SiC/$Si_{1-x}C_x$(x~0.20)인 실리콘 양자점 초격자 박막을 제조하고, $1000^{\circ}C$에서 20분간 질소 분위기에서 열처리를 하였다. Grazing incident X-ray diffraction(GIXRD)를 통해서 Si(111)과 $\beta$-SiC (111)이 생성되었음을 확인하였고, High resolution transmission electron microscopy(HRTEM) 사진으로 양자점의 크기와 분포 밀도를 확인할 수 있었다. Photoluminescence(PL)에서 1.4, 1.5, 1.7, 1.9eV의 Peak이 확인되었다.

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ESPI 기법을 이용한 미소 인장 특성 추정 (Measurement of Micro-Tensile Properties using ESPI technique)

  • 허용학;김동일;윤경진;김경석;오충석
    • 한국정밀공학회지
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    • 제18권5호
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    • pp.90-97
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    • 2001
  • An electronic speckle pattern interferometry (ESPI) system for measuring tensile properties under micro-tensile testing has been developed. The system consists of an optical system and an image processing system. In the optical system, optical components for measurement of in-plane deformation are arranged on the path of He-Ne laser. In the image processing system, the window-based program for acquiring speckle pattern interferometric image was developed and deformation in a small specimen is continuously evaluated during the test. Using this system, tensile strain of copper foil was measured during tensile testing. Tensile specimen had the thickness and width of 22 and 500 ${\mu}{\textrm}{m}$, respectively. Tensile properties, including the elastic modulus, yielding strength and tensile strength, of the copper were evaluated and also plastic exponent and coefficient in the Ramberg-Osgood relationship were evaluated from the stress-strain curve.

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GZO/ZTO 투명전극을 이용한 DSSC의 광전 변환 효율 특성 (Sputtered ZTO as a blocking layer at conducting glass and $TiO_2$ Interfaces in Dye-Sensitized Solar Cells)

  • 박재호;이경주;송상우;조슬기;문병무
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 추계학술대회 초록집
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    • pp.53.2-53.2
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    • 2011
  • Dye-sensitized solar cells(DSSCs) have been recognized as an alternative to the conventional p-n junction solar cells because of their simple fabrication process, low production cost, and transparency. A typical DSSC consists of a transparent conductive oxide (TCO) electrode, a dye-sensitized oxide semiconductor nanoparticle layer, liquid redox electrolyte, and a Pt-counter electrode. In dye-sensitized solar cells, charge recombination processes at interfaces between coducting glass, $TiO_2$, dye, and electrolyte play an important role in limiting the photon-to-electron conversion efficiency. A layer of ZTO thin film less than ~200nm in thickness, as a blocking layer, was deposited by DC magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells(DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/I_3^-$). The presented DSCs were fabricated with working electrode of Ga-doped ZnO glass coated with blocking ZTO layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited GZO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells.

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범프들의 상호작용을 고려한 공기 포일 베어링의 구조적 강성 및 쿨롱 감쇠에 대한 연구 (A Study on the Structural Stiffness and Coulomb Damping of Air Foil Bearing Considering the Interaction among Bumps)

  • 박동진;김창호;이성철;이용복
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2006년도 춘계학술대회논문집
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    • pp.1135-1141
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    • 2006
  • Air foil bearing supports the rotating journal using hydrodynamic force generated at thin air film. The bearing performance, stiffness, damping coefficient and load capacity, depends on the rotating speed and the performance of the elastic foundation, bump foil. The main focus of this study is to decide the dynamic performance of corrugated bump foil, structural stiffness and Coulomb damping caused by friction between bump foil and top foil/bump foil and housing. Structural stiffness is determined by the bump shape (bump height, pitch and bump thickness), dry-friction, and interacting force filed up to fixed end. So, the change of the characteristics was considered as the parameters change. The air foil bearing specification for analysis follows the general size; diameter 38.1 mm and length 38.1mm (L/D=1.0). The results show that the stiffness at the fixed end is more than the stiffness at the free end, Coulomb damping is more at the fixed end due to the small displacement, and two dynamic characteristics are dependent on each other.

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비정질 As-Ge-Se-S 박막에서 선택적 에칭을 통한 2차원 엠보싱형 홀로그램 제작 (2- Dimensional Embossing Type Hologram Fabrication in Amorphous As-Ge-Se-S with the Selective Etching)

  • 이기남;정홍배
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권7호
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    • pp.354-358
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    • 2006
  • In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were $2.5\AA/s,\;3.3\AA/s,\;3.9\AA/s$ where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the $90^{\circ}$ degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully.

고균일 유기박막 코팅을 위한 모세관 현상 전산모사 (Simulation of Capillary Phenomenon for Solution Coating of High-uniformity Organic thin Films)

  • 신동균;홍기영;박종운;서화일
    • 반도체디스플레이기술학회지
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    • 제16권1호
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    • pp.106-111
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    • 2017
  • When a substrate with a pixel-defining layer (bank) is coated, there arises capillary force due to surface tension and adhesive forces between a solvent and the bank layer. It brings in a degradation of film thickness and emission uniformities within pixels. With an attempt to suppress it, we have performed fluid flow simulations of capillary arise by varying the contact angle of bank and the bank structure. We have first demonstrated that the fluid flow model can reproduce the capillary phenomenon that was observed experimentally. It has been found that capillary arise can be suppressed using a hydrophobic material for the bank layer. Furthermore, it was suppressed by tilting the sidewalls outwardly (i.e., using a positive photoresistor). We can obtain very uniform films when the slope is $50^{\circ}$ with the contact angle of $40^{\circ}$.

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수소분리용 Pd-Cu 합금 분리막의 Cu Reflow 영향 (The Effect of Cu Reflow on the Pd-Cu Alloy Membrane Formation for Hydrogen Separation)

  • 문진욱;김동원
    • 한국표면공학회지
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    • 제39권6호
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    • pp.255-262
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    • 2006
  • Pd-Cu alloy membrane for hydrogen separation was fabricated by sputtering and Cu reflow process. At first, the Pd and Cu was continuously deposited by sputtering method on oxidized Si support, the Cu reflow process was followed. Microstructure of the surface and permeability of the membrane was investigated depending on various reflow temperature, time, Pd/cu composition and supports. With respect to our result, Pd-Cu thin film (90 wt.% Pd/10 wt.% Cu) deposited by sputtering process with thickness of $2{\mu}m$ was heat-treated for Cu reflow The voids of the membrane surface were completely filled and the dense crystal surface was formed by Cu reflow behavior at $700^{\circ}C$ for 1 hour. Cu reflow process, which is adopted for our work, could be applied to fabrication of dense Pd-alloy membrane for hydrogen separation regardless of supports. Ceramic or metal support could be easily used for the membrane fabricated by reflow process. The Cu reflow process must result in void-free surface and dense crystalline of Pd-alloy membrane, which is responsible for improved selectivity oi the membrane.

블루레이 디스크의 커버 레이어 스핀코팅 시 챔퍼각을 이용한 끝단 범프 최소화 연구 (Study in Minimum of Edge Bump using the Chamfer Angle in Blu-ray Disc Cover layer Spin Coating Process)

  • 이해곤;손성기;조기철;신홍규;김병희
    • 정보저장시스템학회논문집
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    • 제2권3호
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    • pp.178-183
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    • 2006
  • A Blu-ray disc, which has a more than 25GB optical capacity, has been known as a promising next-generation optical disc format. It commonly has a 1.1 mm thick substrate and a 0.1 mm thick cover layer for beam transmitting and the protection of the reflecting surface. The cover layer is generally formed by the spin coating process. However, in conventional spin coating, small bumps are formed along the rim of the disc, which results in the fatal reading error. Numerical simulation of the thin film flow behaviors during spin coating with the commercial solver and optimal spinning conditions was obtained. Thickness distribution of the cover layer according to the variation of substrate's edge shape could be calculated as well. By modifying the shape of the substrate edge shape, the bumps along the disc rim could be minimized, and it was proved that the chamfered edge, around $5{\sim}10$ degree, is the simplest and most effective way to minimize the bumps.

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ALD를 이용한 극박막 $HfO_2 /SiON$ stack structure의 특성 평가 (Characterization of $HfO_2 /SiON$ stack structure for gate dielectrics)

  • Kim, Youngsoon;Lee, Taeho;Jaemin Oh;Jinho Ahn;Jaehak Jung
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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    • pp.115-121
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    • 2002
  • In this research we have investigated the characteristics of ultra thin $HfO_2 /SiON$stack structure films using several analytical techniques. SiON layer was thermally grown on standard SCI cleaned silicon wafer at $825^{\circ}C$ for 12sec under $N_2$O ambient. $HfO_2 /SiON$$_4$/$H_2O$ as precursors and $N_2$as a carrier/purge gas. Solid HfCl$_4$was volatilized in a canister kept at $200^{\circ}C$ and carried into the reaction chamber with pure $N_2$carrier gas. $H_2O$ canister was kept at $12^{\circ}C$ and carrier gas was not used. The films were grown on 8-inch (100) p-type Silicon wafer at the $300^{\circ}C$ temperature after standard SCI cleaning, Spectroscopic ellipsometer and TEM were used to investigate the initial growth mechanism, microstructure and thickness. The electrical properties of the film were measured and compared with the physical/chemical properties. The effects of heat treatment was discussed.

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플라즈마 화학 기상 증착법에서 DC bias가 인가된 탄소나노튜브의 수직성장과 전계방출 특성 (The Vertical Growth of CNTs by DC Bias-Assisted PECVD and Their Field Emission Properties.)

  • 정성회;김광식;장건익;류호진
    • 한국전기전자재료학회논문지
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    • 제15권4호
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    • pp.367-372
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    • 2002
  • The vertically well-aligned carbon nanotubes(CNTs) were successfully grown on Ni coated silicon wafer substrate by DC bias-assisted PECVD(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15~30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of gas mixture such as $C_2H_2-NH_3$ was systematically investigated by adjusting the gas mixing ratio at $570^{\circ}C$ under 0.4Torr. The diameter of the grown CNTs was 40~200nm and the diameter of the CNTs increased with increasing the Ni particles size. TEM images clearly showed carbon nanotubes to be multiwalled. The measured turn-on field was $3.9V/\mu\textrm{m}$ and an emission current of $1.4{\times}10^4A/\textrm{cm}^2$ was $7V/\mu\textrm{m}$. The CNTs grown by bias-assisted PECVD was able to demonstrate high quality in terms of vertical alignment, crystallization of graphite and the processing technique at low temperature of $570^{\circ}C$ and this can be applied for the emitter tip of FEDs.