• Journal of Welding and Joining
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• v.16 no.5
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• pp.86-92
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• 1998

High speed wire seam weldability of tin coated thin gage sheet steels was investigated. Thickness and coating weight ranges of the test materials were 0.21~0.35mm and 1.1/1.1~2.8/11.2g/$m^2$, respectively. Test results indicated that the surface roughness value, Rz decreased as increasing the coating weight. The Rz was thought to be one of the important factors to influence the optimum welding condition range, $\triangle$Q. The $\triangle$Q showed close relationship with welding conditions such as welding pressure and travel speed. Higher welding pressure widened the $\triangle$Q while higher travel speed reduced the $\triangle$Q value. Results also demonstrated that tin coating weight should be optimized based on the weldability or the serviceability after welding. At th HAZ of sheet materials with thinner coating layer, tin depleted zone was produced since molten film of the coating material on the base metal agglomerated by the surface tension, which could result in reducing the corrosion resistance of the HAZ in the service environment.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.558-563
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• 1996

We fabricated high voltage hydrogenerated amorphous silicon thin film transistors (a Si:H HVTFT) and investigated its temperature dependent characteristics of from 303 K to 363 K. The results show that the drain current was decreased at low gate voltage and increased at high gate voltage exponentially. According to the increasing the thickness of a Si layer, drain current increased. Difference of drain current at 363 K was increasd at the lower gate voltage and decreased at the higher gate voltage. When the drain and gate voltage of 100 V applied, the drain current increased linearly with rise temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.296-300
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• 2002

Thin films of Hydrogenated amorphous carbon(a-C:H) are generally exhibited by high electrical resistivities from 10$^2$ to 10$\^$16/ Ω$.$cm, resulting in an interesting material for high power, high temperature MIS devices applications. The hydrogenated amorphous carbon(a-C:H) films were deposited on silicon and glass using an rf plasma enhanced CVD method. The resultant film properties were evaluated in the respect of material based on r.f. power variation. The hydrogenated amorphous carbon(a-C:H) films of thickness ranging from 30 to 50 m were deposited at the pressure of 1 ton with the mixture of methane and hydrogen. We have used rf-IR( courier transform IR) and AFM(Atomic force microscopy) for determining physical properties and current-voltage(I-V) measurement for electrical Properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.268-271
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• 2004

The phase transition from amorphous to crystalline states, and vice versa, of $Ge_2Sb_2Te_5$ films by applying electrical pulses have been studied. This material can be used as nonvolatile memory. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.137-141
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• 1993

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using glow discharge plasma enchanced chemical vapor deposition (GDPECVD) with $2500{\AA}\;SiO_2$, $400-1500{\AA}$ a-Si thickness, 350V output voltage, 100V input voltaege, and $9.55{\times}10^4$ average on/off ratio. We found that leakage current of high voltage TFT occured 0-70V drain voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.366-366
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• 2010

Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, below Intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. Efficiency with variation of the concentration was grown by the a-Si p-type with increasing concentrations of Na, efficiency with increasing a-Si n-type of Nd Concentrations was not changed, was decreased rapidly when concentrations were decreased. Efficiency was increased when c-Si n-type of Nd concentration was increased, otherwise efficiency was decreased when concentration was decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.437-438
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• 2008

박막태양전지에서 p-layer, i-layer, n-layer의 thickness와 doping concentration은 가장 기본이 되는 요소이다. 각 layer에서 위 두 가지 요소를 ASA simulator를 이용해서 높은 효율을 갖는 박막태양전지를 설계하기 위해 조절하였다. Simulation결과 p-layer의 thickness는 $9.5*10^{-9}m$, doping concentration은 0.2eV, i-layer의 thickness는 $4.535*10^{-7}m$, n-layer의 thickness는 $2*10^{-8}m$, doping concentration 은 0.1eV에서 최종 11.48%의 효율을 얻을 수 있었다. 본 연구를 통하여 높은 효율의 박막태양전지 설계 시에 도움이 될 수 있을 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.33-34
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• 2008

Barium titanate (BaTiO3) is one of the most important dielectric materials for the electronic devices, such as MLCC (Multilayer Ceramic Capacitor). The thickness of the dielectric thin film in MLCC has become thinner and reached about 0.8 ${\mu}m$. Further down sizing is required for the higher performance. For this reason, we should take into account for the size effect of Barium titanate powders. In this study, we demonstrated that size effect for BaTiO3 (0.2 ~ 0.5 ${\mu}m$, hydrothermal BT) could be estimates by using dielectric properties analysis together with the powder properties.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1059-1062
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• 2003

Micro-tensile testing system has been developed and micro-tensile tests for copper foil have been carried out. The system consisted of a micro tensile loading system and a micro-ESPI system for measuring strain. The loading system has a maximum loading capacity of 50N and a stroke resolution of 4.5nm. Stress-strain curves for the electro-deposited copper foil with the thickness of 18$\mu\textrm{m}$ were obtained, and tensile properties, including elastic modulus, yielding strength and tensile strength, were determined. The tensile properties obtained under three different conditions of testing speed showed a dependency on the speed.

• Journal of the Korean Society of Clothing and Textiles
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• v.27 no.11
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• pp.1252-1259
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• 2003

The purpose of this study is to develop multi-functional fabrics by chitosan added on acrylic acid grafted cotton kintted fabrics. Therefore physical properties such as antimicrobial activity, deodorization rate, moisture regain, whiteness, and tensile strength of chitosan added on acrylic acid grafted cotton kintted fabrics were investigated. The results are as follows; According to increased chitosan's concentration, grafting yield was decreased. Therefore thickness of film by treated chitosan added on acrylic acid grafted cotton kintted fabric became thin. FT-IR spectra of chitosan add on acrylic acid grafted cotton kintted fabric clearly showed peaks of COOH and NH$_2$. Antimicrobial activity and deodorization rate of chitosan add on acrylic acid grafted cotton kintted fabrics were increased greatly than untreated. And their durability of laundry were good, Moisture regain of treated fabrics was higher than untreated. Whiteness and tensile strength of treated fabrics were lower than untreated.