• 한국진공학회지
• /
• 제4권S2호
• /
• pp.30-33
• /
• 1995

By using X-ray double crystal diffraction technique the multilayer structure composed of glass membrane, platinum film and $\alpha Al_2O_3$ substrate has been studied. It is found the stress is produced in the film by thermal mismatch within multilayer materials. The measuring results of thin film platinum resistors show that the stress were induce resistance change of device and different stress status will produce add resistance in different direction. Selecting proper glass material can make opposite stress in Pt film and opposite add resistance due to thermal mismatch. The reliability of Pt resistor has been improved with method of this stress compensation.

• 한국전기전자재료학회논문지
• /
• 제13권12호
• /
• pp.1058-1062
• /
• 2000

We investigated resistive superconducting fault current limites (SFCLs) fabricated using YBCO thin films on 2-inch diameter sapphire substrates. Nearly identical SFCL units were prepared and tested. The units were connected in series and parallel to increase the current and voltage ratings. A serial connection of the units showed significantly unbalanced power dissipation between the units. This imbalance was removed by introducing a shunt resistor to the firstly quenched unit. Parallel connection of the units increased the current rating. An SFCL module of 4 units in parallel, each of which has minimum quench current rating. An SFCL module of 4 units in parallel, each of which has minimum quench current 25 A$\_$peak/, was produced and successfully tested at a 220 V$\_$rms/circuit. From the resistance increase, we estimated that the film temperature increased to 200 K in 5 msec, and 300 K in 120 msec. Successive quenches revealed that this system is stable without degradation in the current limiting capability under such thermal shocks as quenches at 220 V$\_$rms/.

• 한국전기전자재료학회논문지
• /
• 제31권1호
• /
• pp.50-54
• /
• 2018

In this study, a femtosecond laser pre-annealing technology based on indium zinc oxide (IZO) thin-film transistors (TFTs) was investigated. We demonstrated a stable pre-annealing process to analyze the change in the surface structures of thin-films, and we improved the electrical performance. Furthermore, static and dynamic electrical characteristics of IZO TFTs with n-channel inverters were observed. To investigate the static and dynamic responses of our solution-processed IZO TFTs, simple resistor-load-type inverters were fabricated by connecting a $1-M{\Omega}$ resistor. The femtosecond laser pre-annealing process based on IZO TFTs showed good performance: a field-effect mobility of $3.75cm_2/Vs$, an $I_{on}/I_{off}$ ratio of $1.8{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Our IZO-TFT-based N-MOS inverter performed well at operating voltage, and therefore, is a good candidate for advanced logic circuits and display backplane.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.93-93
• /
• 2013

In recent years, multifunctional ternary nitride thin films have received extenstive attention due to its versatility in many applications. In particular, noble metal based ternary nitride thin films showed a promising properties in the application of Multifunctional heating resistor films because its good electrical properties and excellent resistance against oxidation and corrosion. In this study, we prepared multifunctional noble metal based ternary nitride thin films by atomic layer deposition (ALD) and plasma-enhanced ALD (PEALD) method. ALD and PEALD techniques were used due to their inherent merits such as a precise composition control and large area uniformity, which is very attractive for preparing multicomponent thin films on large area substrate. Here, we will demonstrate the design concept of multifunctional noble metal based ternary thin films. And, the relationship between microstructural evolution and electrical resistivity in noble metal based ternary thin films will be systemically presented. The useful properties of noble metal based ternary thin films including anti-corrosion and anti-oxidation will be discussed in terms of hybrid functionality.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.383-384
• /
• 2008

$SnO_2$ oxides are considerable interest for the development of transparent electrode, thin film resistor and gas sensors. Electrospinning is a class of nanofiber forming processes by which electrostatic forces are employed to control the production of nanofibers. In this study, antimony doped tin oxide thin films were prepared by electrospinning process. Effects of ATO doping concentration and applied voltage on electrical and light transmission properties were investigated.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
• /
• pp.103-106
• /
• 2006

Semiconductor laser diode has a reflective facet in a both-ends side fundamentally. Laser performance for improving, Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing superluminescent diode and reducing the reflection-induced intensity noise of laser diode, it's key techniques are AR/HR coatings. In the study AR coating film were manufactured by Ion-Assisted Deposition(IAD) system. Then manufactured coating film measurement electrical properties(L-I-V, Se, Resistor) and Optical properties (wavelength FFP)

• 한국산학기술학회논문지
• /
• 제17권11호
• /
• pp.635-639
• /
• 2016

초고주파 대역에서 사용하는 소자들은 기생성분으로 인하여 주파수가 증가함에 따라 이득이 감소한다. 이러한 특성을 보상하기 위해 전자전과 같은 광대역 시스템에서는 반대의 기울기를 갖는 선형 이득 등화기가 필요하다. 본 논문에서는 18~40GHz 대역에서 사용할 수 있는 선형 이득 등화기를 설계하고 제작하였다. 설계와 제작의 오차를 줄이기 위하여 회로설계와 모멘텀 설계를 진행하였다. 구현 주파수 대역 내에서 가능한 기생성분을 최소화하기 위해 thin film 공정을 사용하였으며, 박막저항의 길이에 의한 파장 변화를 최소화하기 위해 100 ohm/square의 sheet resistance로 설계하였다. 본 선형 이득 등화기는 직렬 마이크로스트립 라인에 사분의 일 파장을 갖는 공진기를 저항으로 결합하는 구조이다. 모두 3개의 1/4 파장의 Short 공진기를 사용하였다. 제작된 선형 이득 등화기는 40GHz에서 -5dB 이상의 손실을 가졌으며, 18 ~ 40 GHz 대역에서 6dB 기울기를 나타내었다. 제작된 이득 등화기를 전자전 수신기와 같은 광대역 MMIC들이 다단으로 연결된 장치 내부에 사용한다면 주파수가 증가에 따른 이득 평탄도 악화를 감소시킬 수 있을 것이다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.424-425
• /
• 2007

Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing super luminescent diode and reducing the reflection-induced intensity noise of laser diode. Anti-Reflection coating Film was designed by Macleod Simulator. Coating Materials were decided $Ti_3O_5$ and $SiO_2$. Thickness of Coating layer $Ti_3O_5/SiO_2$ were 105[nm], 165[nm]. In the study Anti-Reflection coating Film was design for Laser diode and deposited by Ion-Assisted Deposition system. Then manufactured thin film measured electrical properties(L-I-V, Se, Resistor) and Optical properties(wavelength FFP). Slop-efficiency and FFP characteristic is 0.302[W/A], $22.3^{\circ}$(Horizontal), $24.4^{\circ}$(Vertical).

• Transactions on Electrical and Electronic Materials
• /
• 제7권1호
• /
• pp.7-11
• /
• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• 대한금속재료학회지
• /
• 제47권9호
• /
• pp.591-596
• /
• 2009

$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.