• Journal of Sensor Science and Technology
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• v.33 no.5
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• pp.353-358
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• 2024

Al-Ni thin films were fabricated using combinatorial sputtering system to realize highly sensitive surface acoustic wave (SAW) devices. The Al-Ni sample library was grown with various chemical compositions and electrical resistivities, which provided important information for selecting the most suitable materials for SAW devices. As acoustic waves generated from piezoelectric materials are significantly affected by the resistivity and density of the interdigital transducer (IDT) electrodes, three types of Al-Ni thin films with different Al contents were fabricated. The thickness of the Al-Ni thin film used in the SAW-IDT electrode was fixed at 100 nm. As the Al content of the Al-Ni film decreased from 79.2 to 24.5 at%, the resistivity increased slightly from 4.8 to 5.8 × 10^-5 Ω-cm, whereas the calculated density increased significantly from 3.6 to 6.9 g/cm³. The SAW device composed of Al-Ni IDT electrodes resonated at 71 MHz without frequency shifts; however, the selectivity of the resonant frequency and insertion loss deteriorated as the Al content decreased. When there is no significant difference in the electrical characteristics of the SAW-IDT electrodes, the performance of the SAW devices can be determined by the density of the IDT electrodes.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.240-245
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.184-189
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• 1995

The electrical property of ultra thin PVA films(several hundreds .angs.-several .mu.m in thickness) formed by sphere bulb blowing technique, has been studied. The electrical conductivity of relatively thick films(>several thousands .angs.) has been very high and enhanced by the exposure either to high humidity of air or $NH_3$, which can be explained in terms of the role of ionic transport. The use of PVA films as NH$_{3}$ sensor is also proposed. In ultra thin PVA films less than 1500.angs., two conducting states ; high conducting and low conducting states, are observed. The nonlinear current-voltage characteristics in the low conducting state and the switching between these two states are also confirmed. These properties are discussed in terms of electronic conduction processes. The breakdown strength of the ultra thin PVA film is found to be very high(-30MV/cm), supporting the electron avalanche process in a thick polymer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.358-361
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• 1999

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD\`s and micro-heater on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer The MgO layer improved adhesion of Pt thin-films to SiO$_2$` layer without any chemical reactions to Pt thin-films under high as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W. The respons time was about 100 msec when input flow was step-input

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.247-247
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• 2009

In this work, Ga-doped ZnO (GZO) thin films for toxic gas sensor application were deposited on low temperature co-fired ceramic (LTCC) substrates, by RF magnetron sputtering method. LTCC is one of promising materials for integration with heater, low cost production and high manufacturing yields than silicon substrate. The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 12 greentapes which consist of alumina and glass particle in an organic binder. The GZO thin films deposited on the substrates and were analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The films are well crystallized in the hexagonal (wurzite) structure with increasing thickness. The fabricated sensors showed good sensitivity and fast response time to common types of toxic gases (NOx, COx).

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.483-490
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• 1997

Thin film Si has been used in sensors, radiation detectors, and solar cells. The carrier mobility of thin film Si influences the device behavior through its frequency response or time response. Since poly-Si shows the higher mobility value, a-Si:H films on Mo substrate were subjected to various crystallization treatments. Consequently, we need to find an appropriate method in mobility measurement before and after the anneal treatment. This paper investigates the carrier mobility improvement with anneal treatments and summarizes the mobility measurement methods of the a-Si:H and poly-Si film. Various techniques were investigated for the mobility determination such as Hall mobility, HS, TOF, SCLC, TFT, and TCO method. We learned that TFT and TCO method are suitable for the mobility determination of a-Si:H and poly-Si film. The measured mobility was improved by $2{\sim}3$ orders after high temperature anneal above $700^{\circ}C$ and grain boundary passivation using an RF plasma rehydrogenation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.727-730
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• 2002

Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. Cu/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The slop of temperature and resistance shows linear.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.04a
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• pp.13-16
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• 2005

The mechanical properties of composite materials may degrade severely in the presence of damage. Especially, the high-velocity impact such as bird strike, a hailstorm, and a small piece of tire or stone during high taxing, can cause sever damage to the structures and sub-system in spite of a very small mass. However, it is not easy to detect the damage in composite plates using a single technique or any conventional methods. In this paper, the PYDF(polyvinylidene fluoride) film sensors and strain gages were used for monitoring impact damage initiation and propagation in composite laminates. The WT(wavelet transform) and STFT(short time Fourier transform) are used to decompose the sensor signals. A ultrasonic C-scan and a digital microscope are also used to examine the extent of the damage in each case. This research demonstrate how various sensing techniques, PVDF sensor in particular, can be used to characterize high-velocity impact damage in advanced composites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.101-104
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• 1998

A new planar-type micro gas sensor was designed and fabricated on silicon substrate and the operating characteristics of the sensor were investigated. The thin sensitive film of the sensor was fabricated by spin-coating of the SnO$_2$ sol solution which was synthesized by hydrothermal method. The spin-coating method for preparation of sensing layer was adopted to improve the long-term stability of the fabricated sensing film instead of physical methods such as rf sputtering and thermal evaporation. The fabricated microsensor showed a fairly good sensing performance for CO gas in air at 250$^{\circ}C$ The sensitivity(S=Ra/Rg) was shown to be about 5 to 2000ppm CO with heating power of 50mW.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.389-396
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• 2022

Quartz crystal microbalance (QCM) based sensors are used for various applications owing to advantages such as excellent accuracy and precision, rapid response, and tiny footprint. Traditional applications of QCM-based sensors include biological sensing and thin-film thickness monitoring. Recently, QCMs have been used as functional material for novel physical and chemical detections, and with improved device design. QCM-based sensors are garnering considerable attention in particulate matter sensing and electric nose application. This review covers the challenges and solutions in physical, chemical, and biological sensing applications. First, various physical sensing applications are introduced. Secondly, the toxic gas and chemical detection studies are outlined, focusing on introducing a coating method for uniform sensing film and sensing materials for a minimal damping effect. Lastly, the biological and medical sensing applications, which use the monomolecularly decorating method for biomolecule recognition and a brief description of the overall measuring system, are also discussed.