• Title/Summary/Keyword: Thin Film, Sensor

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Development of Glucose Biosensor Using Sol-Gel Reaction of Tetraethoxysilane (Tetraethoxysilane의 졸-겔 반응을 이용한 전기화학적 glucose biosenor 개발)

  • Chang, Seong-Cheol;Park, Deog-Su
    • Journal of Sensor Science and Technology
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    • v.21 no.4
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    • pp.311-317
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    • 2012
  • Disposable amperometric screen-printed biosensor strips have been fabricated by a sol-gel encapsulation for the analysis of glucose. The glucose oxidase(GOx) is entrapped in the gel matrix through sol-gel transition of tetraethoxysliane(TEOS). The biosensor is fabricated by GOx containing thin film of TEOS gel on the surface of screen-printed carbon electrode(SPCE). The GOx-containing thin film of TEOS gel offers a one-step modification process on the surface of SPCE. The optimum conditions for glucose determination have been characterized with respect to the applied potential, enzyme loading ratio, and pH. The linear range and detection limit of glucose detection were from 2.0 mM to 16.0 mM and 0.25 mM, respectively.

The Fabrication and Characteristics of the Pyroelectric IR Sensor using P(VDF/TrFE) Thin Films Fabricated by the Spin Coating Technique

  • Kwon, Sung-Yeol
    • KIEE International Transactions on Electrophysics and Applications
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    • v.12C no.4
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    • pp.225-228
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    • 2002
  • The pyroelectric sensor of P(VDF/TrFE) film as sensing materials has been fabricated and evaluated with another commercial pyroelectric sensor using ceramic materials for sensing, The device was mounted in TO-5 housing to detect infrared light of a 5.5~14 ${\mu}{\textrm}{m}$ wavelength. The NEP(noise equivalent power) and specific detectivity D* of the device were 2.13$\times$10$^{-8}$ W and 9.37 10$^{6}$ cm/W under emission energy of 13 ㎼/$\textrm{cm}^2$, respectively.

Development of a scratch tester using a two-component force sensor (2축 힘센서를 이용한 스크레치 테스트 개발)

  • 김종호;박연규;이호영;박강식;오희근
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.1018-1021
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    • 2003
  • A scratch tester was developed to evaluate the adhesive strength at interface between thin film and substrate(silicon wafer). Under force control, the scratch tester can measure the normal and the horizontal forces simultaneously as the probe tip of the equipment approaches to the interface between thin film and substrate of wafer. The capacity of each component of force sensor is 0.1 N ∼ 100 N. In addition, the tester can detect the signal of elastic wave from AE sensor(frequency range of 900 kHz) attached to the probe tip and evaluate the bonding strength of interface. Using the developed scratch tester. the feasibility test was performed to evaluate the adhesive strength of semiconductor wafer.

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ECG & Temperature Measurement Wireless Sensor used Ag/AgCl Thin-Film (Ag/Agcl 박막을 이용한 ECG 및 온도 측정용 무선센서)

  • Lim, Jin-Hee;Nam, Hyo-Duck;Jung, Woo-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.342-343
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    • 2007
  • In this paper, we developed an integrated miniaturized device which acquires and transmits the signal of ECG an interested heartbeat and body's temperature. Electrocardiogram(ECG) is a recording of the electrical activity on the body surface generated by heart. ECG & temperature measurement is collected by wireless sensor (for Ag/AgCl Thin-Film) placed at designated locations on the body. It is that dual wireless sensor will apply variously to Ubiquitous & Healthcare System.

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Monitoring of Low-velocity Impact Damage Initiation of Gr/Ep Panel 7sing Piezoeleetric Thin Film Sensor (압전필름센서를 이용한 복합재 평판의 저속충격 손상개시 모니터링)

  • 박찬익;김인걸;이영신
    • Composites Research
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    • v.15 no.2
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    • pp.11-17
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    • 2002
  • The piezoelectric thin film sensor can be used to interpret variations in structural and material properties, e.g. for structural integrity monitoring and assessment. To illustrate one of this potential benefit, PVDF (polyvinylidene fluoride) film sensors are used for monitoring impact damage in Gr/Ep composite panels. Both PVDF film sensors and strain gages are attached to the surface of Gr/Ep specimens. A series of impact tests at various impact energy by changing impact mass the height are performed on the instrumented drop weight impact tester. The sensor responses are carefully examined to predict the onset of impact damage such as indentation, matrix cracking, and delamination, etc. Test results show that the particular waveforms of sensor signals implying the damage initiation and development are detected above the damage initiation impact energy. As expected, the PVDF film sensor is found to be more sensitive to impact damage initiation event than the strain gage.

CO Sensing Characteristics of $Pt-SnO_{2-x}$ Thin Film Devices Fabricated by Thermal Oxidation (열산화법으로 형성한 $Pt-SnO_{2-x}$ 박막소자의 CO 가스 감지특성)

  • Shim, Chang-Hyun;Park, Hyo-Derk;Lee, Jae-Hyun;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.1 no.2
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    • pp.117-123
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    • 1992
  • $Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

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Humidity Sensitive Characterization by Electrode Pattern on the Capacitive Humidity Sensor Using Polyimide (폴리이미드 용량형 습도센서의 전극 패턴에 따른 감습 특성)

  • Park, Sung-Back;Shin, Hoon-Kyu;Lim, Jun-Woo;Chang, Sang-Mok;Kwon, Young-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.9
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    • pp.566-570
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    • 2014
  • Electrode pattern effects on the capacitive humidity sensor were investigated. The fabrication of the capacitive humidity sensor was formed with three steps. The bottom electrode was formed on the silicon substrate with Pt/Ti thin layer by using shadow mask and e-beam evaporator. The photo sensitive polyimide was formed on the bottom electrode by using photolithography process as a humidity sensitive thin film. The upper electrode was formed on the polyimide thin film with Pt/Ti thin layer by using e-beam evaporator and lift-off method. Three electrode patterns, such as circle, square, and triangle pattern, were used and changed the sizes to investigate the effects. The capacitances of the sensors were decreased 622 to 584 pF with the area decreament of patterns 250,000 to $196,250{\mu}m^2$. From these results, a capacitive humidity sensor with photo sensitive polyimide is expected to be applied to a high sensitive humidity sensor.

Thin Film Gas Sensors Based on Tin Oxide for Acetonitrile (산화주석 기반의 아세토니트릴 검지용 박막형 가스센서)

  • Choi, Nak-Jin;Ban, Tae-Hyun;Kwak, Jun-Hyuk;Lim, Yeon-Tae;Joo, Byung-Su;Kim, Jae-Chang;Huh, Jeung-Soo;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.13 no.3
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    • pp.218-223
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    • 2004
  • Thin film gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is acetonitrile ($CH_{3}CN$) that is simulant gas of blood agent gas. Sensing materials are $SnO_{2}$, $SnO_{2}$/Pt, and (Sn/Pt)oxidation with thickness from $1000{\AA}$ to $3000{\AA}$. Sensor was consisted of sensing electrode with interdigit (IDT) type in front side and a heater in back side. Its dimension was $7{\times}10{\times}0.6mm^{3}$. Fabricated sensor was measured as flow type and monitored real time using PC. The optimal sensing material for $CH_{3}CN$ was {Sn($3000{\AA}$)/Pt($30{\AA}$)}oxidation and its sensitivity and operating temperature were 30%, $300^{\circ}C$ in $CH_{3}CN$ 3 ppm.

Thin-Film Transistor-Based Strain Sensors on Stiffness-Engineered Stretchable Substrates (강성도 국부 변환 신축성 기판 위에 제작된 박막 트랜지스터 기반 변형률 센서)

  • Youngmin Jo;Gyungin Ryu;Sungjune Jung
    • Journal of Sensor Science and Technology
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    • v.32 no.6
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    • pp.386-390
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    • 2023
  • Stiffness-engineered stretchable substrate technology has been widely used to produce stretchable displays, transistors, and integrated circuits because it is compatible with various flexible electronics technologies. However, the stiffness-engineering technology has never been applied to transistor-based stretchable strain sensors. In this study, we developed thin-film transistor-based strain sensors on stiffness-engineered stretchable substrates. We designed and fabricated strain-sensitive stretchable resistors capable of inducing changes in drain currents of transistors when subjected to stretching forces. The resistors and source electrodes of the transistors were connected in series to integrate the developed stretchable resistors with thin-film transistors on stretchable substrates by printing the resistors after fabricating transistors. The thin-film transistor-based stretchable strain sensors demonstrate feasibility as strain sensors operating under strains of 0%-5%. This strain range can be extended with further investigations. The proposed stiffness-engineering approach will expand the potential for the advancement and manufacturing of innovative stretchable strain sensors.