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Thin Film Gas Sensors Based on Tin Oxide for Acetonitrile

산화주석 기반의 아세토니트릴 검지용 박막형 가스센서

  • Choi, Nak-Jin (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Ban, Tae-Hyun (Department of Sensor, Kyungpook National University) ;
  • Kwak, Jun-Hyuk (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lim, Yeon-Tae (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Joo, Byung-Su (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kim, Jae-Chang (Department of Chemical Engineering, Kyungpook National University) ;
  • Huh, Jeung-Soo (Department of Materials Science and Metallurgy, Kyungpook National University) ;
  • Lee, Duk-Dong (School of Electronic and Electrical Engineering, Kyungpook National University)
  • 최낙진 (경북대학교 전자전기공학부) ;
  • 반태현 (경북대학교 센서공학과) ;
  • 곽준혁 (경북대학교 전자전기공학부) ;
  • 임연태 (경북대학교 전자전기공학부) ;
  • 주병수 (경북대학교 전자전기공학부) ;
  • 김재창 (경북대학교 화학공학과) ;
  • 허증수 (경북대학교 금속공학과) ;
  • 이덕동 (경북대학교 전자전기공학부)
  • Published : 2004.05.31

Abstract

Thin film gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is acetonitrile ($CH_{3}CN$) that is simulant gas of blood agent gas. Sensing materials are $SnO_{2}$, $SnO_{2}$/Pt, and (Sn/Pt)oxidation with thickness from $1000{\AA}$ to $3000{\AA}$. Sensor was consisted of sensing electrode with interdigit (IDT) type in front side and a heater in back side. Its dimension was $7{\times}10{\times}0.6mm^{3}$. Fabricated sensor was measured as flow type and monitored real time using PC. The optimal sensing material for $CH_{3}CN$ was {Sn($3000{\AA}$)/Pt($30{\AA}$)}oxidation and its sensitivity and operating temperature were 30%, $300^{\circ}C$ in $CH_{3}CN$ 3 ppm.

Keywords

References

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