• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.511-514
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• 1987

Langmuir-Blodgett (LB) films of TCNQ(tetracyanoquinodimethane) with alkyl radical($C_{12}TCNQ$) were prepared on the sample of Al/LB film/Al type where Al are electrode, and polarization in LB film and dipolar moment of molecules in the films were measured by TSC. $Al_2O_3$ layer was yielded on the electrode by natural oxidation in air. According to the cooperation of $Al_2O_3$ dielectric layer and the polarization of $C_{12}TCNQ$-LB film, the macroscopic electrical field was yielded in LB film and $Al_2O_3$ layer. The field strength in $C_{12}TCNQ$-LB films was evaluated at about $1{\times}10^6{\sim}5{\times}10^6\;V/cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.48.1-48.1
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• 2009

Performance of organic field-effect transistors (OFETs) with various temperature-cured polyacrylate(PA) copolymer as a gate insulator was studied. The PA thin film, which was cured at an optimized temperature, showed high dielectric strength (>7 MV/cm), low leakage current density ($5{\times}10^{-9}\;A/cm^2$ at 1 MV/cm) and enabled negligible hysteresis in MIS capacitor and OFET. A field-effect mobility of ${\sim}0.6\;cm^2/V\;s$, on/off current ratio (Ion/Ioff) of ${\sim}10^5$ and inverse subthreshold slope (SS) as low as 1.22 V/decwere achieved. The high dielectric strength made it possible to scale down the thickness of dielectric, and low-voltage operation of -5 V was successfully realized. The chemical changes were monitored by FT-IR. The morphology and microstructure of the pentacene layer grown on PA dielectrics were also investigated and correlated with OFET device performance.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.424-430
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS (metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by AES, SIMS, TEM and AFM. The ONO films with different dimension of tunneling oxide, nitride, and blocking oxide were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$(blocking oxide)/O-rich SiOxNy (interface)/ N-rich SiOxNy(nitride)/O-rich SiOxNy(tunneling oxide). In addition, the SiON phase is distributed mainly near the tunneling oxide/nitride and nitride/blocking oxide interfaces, and the $Si_2NO$ phase is distributed mainly at nitride side of each interfaces and in tunneling oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.196-196
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• 2008

We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.329-337
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• 2001

It has been known that the leakage current in the low field region consists of the dielectric relaxation current and intrinsic leakage current, which cause the charge loss in dynamic random access memory (DRAM) storage capacitor using (Ba,Sr)TiO$_{3}$ (BST) thin film. Especially, the dielectric relaxation current should be seriously considered since its magnitude is much larger than that of the intrinsic leakage current in giga-bit DRAM operation voltage (~IY). In this study, thermally stimulated current (TSC) measurement was at first applied to investigate the activation energy of traps and relative evaluation of the density of traps according to process change. And, through comparing TSC to early methods of I-V or I-t measurement and analyzing, we identify the origin of the dielectric relaxation current and investigate the reliability of TSC measurement. First, the polarization condition such as electric field, time, temperature and heating rate was investigated for reliable TSC measurement. From the TSC measurement, the energy level of traps in the BST thin film has been investigated and evaluated to be 0.20($\pm$0.01) eV and 0.45($\pm$0.02) eV. Based on the TSC measurement results before and after rapid thermal annealing (RTA) process, oxygen vacancy is concluded to be the origin of the traps. TSC characteristics with thermal annealing in the MIM BST capacitor have shown the same trends with the current-voltage (I-V) and current-time (I-t) characteristics. This means that the TSC measurement is one of the effective methods to characterize the traps in the BST thin film.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.313-322
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• 2001

The effects of Zr/Ti concentration ratio in PLZT (10/y/z) thin films prepared by sol-gel method are investigated for the NVFRAM application. Rosette and pyrochlore phase are observed in PLZT (10/40/60) thin film and the (100) orientation, the grain size, and the surface roughness of PLZT thin films increase due to the increase of Ti amount in Zr/Ti concentration ratio. As Ti amount of Zr/Ti concentration ratio increases, the dielectric constants at 10KHz decrease from 600 to 400, while the loss tangents increase from 0.028 to 0.053 and the leakage current densities at 170 kY/cm decrease from 1.64$\times$10$^{-6}$ to 1.26$\times$10$^{-7}$ A/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$ 170 ㎸/cm, the remanent polarization and the coercive field increase from 6.62 to 12.86 $\mu$C/$\textrm{cm}^2$ and from 32.15 to 56.45 ㎸/cm, respectively, according to the change from 40/60 to 0/100 in Zr/Ti concentration ratio. Fatigue and retention properties also improve much as the Zr/Ti concentration ratio change from 40/60 to 0/100. After applying 10$^{9}$ square pulses with $\pm$5V, the remanent polarization of the PLZT (10/40/60) thin film decreases 50％ from the initial state while that of the PLZT (10/0/100) thin film decreases 30％. In the results of retention measurements of 10$^{5}$ s, the remanent polarization of the PLZT (10/0/100) thin film decreases only 11％ from the initial state, while that of the PLZT (10/40/60) thin film decreases 40%.