Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2009.11a
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- Pages.48.1-48.1
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- 2009
Hysteresis-free organic field-effect transistors with ahigh dielectric strength cross-linked polyacrylate copolymer gate insulator
- Xu, Wentao (System on Chip Chemical Process Research Center, Department of Chemical Engineering, Pohang University of Science and Technology(POSTECH)) ;
- Lim, Sang-Hoon (System on Chip Chemical Process Research Center, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH)) ;
- Rhee, Shi-Woo (System on Chip Chemical Process Research Center, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH))
- Published : 2009.11.05
Abstract
Performance of organic field-effect transistors (OFETs) with various temperature-cured polyacrylate(PA) copolymer as a gate insulator was studied. The PA thin film, which was cured at an optimized temperature, showed high dielectric strength (>7 MV/cm), low leakage current density (
Keywords
- organic field-effecttransistor;
- polyacrylate;
- gate insulator;
- hysteresis;
- dielectric strength;
- low-voltage operation