• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제24권3호
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• pp.200-207
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• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3723-3729
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• 2010

We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.

• Journal of the Korean institute of surface engineering
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• 제47권5호
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• pp.252-256
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• 2014

The TiAlCrSiN film was deposited on the WC-20%TiC-10%Co carbide, and its oxidation behavior was examined at $700-1000^{\circ}C$. It displayed relatively good oxidation resistance owing to the formation of $TiO_2$, $Al_2O_3$, $Cr_2O_3$, and $SiO_2$ up to $900^{\circ}C$. However, at $1000^{\circ}C$, the fast oxidation rate and partial oxidation of WC in the substrate led to the formation of the thick, fragile oxide scale.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제31권7호
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• pp.437-442
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• 2018

This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.332-332
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• 2010

We have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films withouWe have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films without a high temperature sintering process. In order to remove the coffee ring effect in the ink drop, we have introduced a co-solvent system in order to create Marangoni flow in the ink drop, which leads to the dense packing of ceramic powders on the substrate during inkjet process. The packing density of the Inkjet-printed $Al_2O_3$ films is around 60% (max. 70%) which is very high compared to the value obtained from the same material films by other conventional methods such as film casting, dip coating process, etc. The voids inside the films (which are around 40% of the entire film volume) are filled with the polymer resin (Cyanate ester) by the infiltration process. This resin infiltration is also implemented by the inkjet printing process right after the Ah03 film ink-jetting process. The microstructures of the printed $Al_2O_3$ films are investigated by Scanning Electron Microscope (SEM) to understand the degree of packing density in the printed films. The inkjet-printed $Al_2O_3$ films have been characterized to investigate its thickness and roughness. Quality factor of the printed $Al_2O_3$ film is also measured to be over 300 at 1MHz.

• Progress in Superconductivity and Cryogenics
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• 제10권1호
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• pp.6-9
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• 2008

We have investigated the MOD process successfully for the fabrication of the YBCO thick film on the $LaAlO_3$(001) single crystalline substrate. The cracking problem in YBCO thick film, a serious problem in the conventional TFA-MOD method, could be overcome with a careful control of precursor materials. Thus coating solution was prepared for the YBCO thick film by using fluorine-free precursor material. The precursor solutions were coated on the LAO(001) single crystalline substrate using the dip coating method, calcined at the temperature up to $500^{\circ}C$, and fired at various high temperatures for 2 h in a reduced oxygen atmosphere. Optimally processed YBCO thick film exhibited high critical current($I_c$) over 200 A/cm-width at 77K in self-field.

• Journal of the Korean Institute of Gas
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• 제13권2호
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• pp.23-29
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• 2009

This study investigated sensitivity of the gas sensor to chemical weapons with the sensor material doped with catalysts. The nano-sized SnO2 powder mixed with metal oxides (TiO2) was doped with transition metals(Pt, Pd and In). Thick film of nano-sized SnO2 powder with TiO2 was prepared by screen-printing method onto Al2O3 substrates with platinum electrode and chemical precipitation method. The physical and chemical properties of sensor material were investigated by SEM/EDS, XRD and BET analyzers. The measured sensitivity to simulant toxic gas is defined as the percentage of resistance of value equation, [(Ra-Rg)/$Ra\;{\times}100$)], that of the resistance(Ra) of SnO2 film in air and the resistance(Rg) of SnO2 film in acetonitrile gas. The best sensitivity and selectivity of these thick film were shown with 1wt.% Pd and 1wt.% TiO2 for acetonitile gas at the operating temperature of $250^{\circ}C$.

• Current Photovoltaic Research
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• 제1권2호
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• pp.103-108
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• 2013

Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제23권7호
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• pp.521-524
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• 2010

Low loss perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. In this study, we fabricated Ag(Ta,Nb)$O_3$ thick films on the $Al_2O_3$ substrates by the screen printing method. The Ag(Ta,Nb)$O_3$ powders were fabricated by the mixed oxide method. The sintering temperature and time were $1150^{\circ}C$ and 2 hrs, respectively. The results of XRD analysis showed that the specimens employed in this study had the pesudo cubic structure. The dielectric permittivity and loss tangent of the films have been characterized from 1 kHz to 1 MHz. Also the dielectric permittivity and loss tangent were measured from 303 K to 393 K. The electrical properties of the film are also discussed.

• Journal of the Korean institute of surface engineering
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• 제50권5호
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• pp.301-307
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• 2017

The purpose of this study is to investigate the electrical properties of thick-film resistor (TFR) prepared from $CaO-ZnO-B_2O_3-Al_2O_3-SiO_2$ (CZBAS) glass containing $RuO_2$ particles. $RuO_2$-glass composite powder was made by mixing and melting oxide powders of constituents. For comparison, $RuO_2$ powder was simply mixed with glass powder. $RuO_2$-40wt% glass composite and mixture were dispersed in an organic binder to obtain printable resistor paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C/min$ in an ambient atmosphere. $RuO_2$-glass composite sample showed much higher resistance compared to the simple mixed sample. This could be attributed to the difference in conducting mechanism. After sintering at $850^{\circ}C$, temperature coefficient of resistance of composite sample was lower than that of simple-mixed sample. TFR with dense and homogeneous microstructure could be obtained by using $RuO_2$-glass composite powder.