• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.90-93
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• 1996

The conduction mechanisms of the off-current in low temperature ($\leq$600$^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT's) has been systematically studied. Especially, the temperature and bias dependence of the off-current between unpassivated and passivated poly-Si TFT's was investigated and compared. The off-current of unpassivated poly-Si TFT's is due to a resistive current at low gate and drain voltage, thermal emission current at high gate, low drain voltage, and field enhanced thermal emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation, it was observed that the off-currents were remarkably reduced by plasma-hydrogenation. It was also observed that the off-currents of the passivated poly-Si TFT's are more critically dependent on temperature rather than electric field.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1559-1563
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• 2011

Thermal hydrogenation of phenylacetylene (PA, $C_8H_6$) to styrene ($C_8H_8$) on pre-$C_xH_y$- and C-covered Cu(111) single crystal substrates has been studied using temperature-programmed desorption (TPD) mass spectrometry. Chemisorbed PA with an acetylene group has been proved to be associated with hydrogen of pre-adsorbed $C_xH_y$ to form styrene (104 amu) on Cu surface. For the parent (PA) mass (102 amu) TPD profile, the TPD peaks at 360 K and 410 K are assigned to chemisorbed vertically aligned PA and flat-lying cross-bridged PA, respectively (J. Phys. Chem. C 2007, 111, 5101). The relative $I_{360K}/I_{410K}$ TPD ratio dramatically increases with increasing pre-adsorbed $C_xH_y$ before dosing PA, while the ratio does not increase for pre-C-covered surface. For PA on pre-$C_xH_y$-covered Cu(111) surface, styrene desorption is enhanced relative to the parent PA desorption, while styrene formation is dramatically quenched on pre-C-covered (lack of adsorbed hydrogen nearby) surface. It appears that only cross-bridged PA associates with adsorbed hydrogen to form styrene that promptly desorbs at 410 K, while vertically aligned PA is less likely to participate in forming styrene.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2737-2742
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• 2011

Ring-opening metathesis polymerization (ROMP) of an ethyl-substituted tetracyclododecene (8-ethyltetracyclo[$4.4.0.1^{2,5}.1^{7,10}$] dodec-3-ene, Et-TCD) was carried out in the presence of a ternary catalyst system consisting of $WCl_6$, triisobutyl aluminium (iso$Bu_3Al$), and ethanol. The optimal molar ratio of Et-TCD/$WCl_3$/iso-$Bu_3Al$/ethanol was found as 500/1/3/2 at which the yield of ring-opened polymer was 100%. 1-Hexene was shown to be an effective molecular weight controlling agent for ROMP reaction of Et-TCD. The hydrogenation of the ring opened polymer (p-Et-TCD) was conducted successfully using Pd(5 wt %)/${\gamma}$-$Al_2O_3$ at $80^{\circ}C$ for 1 h. Chemical structures of p-Et-TCD and its hydrogenated product($H_2$-p-Et-TCD) were characterized using 2D NMR techniques ($^1H-^1H$ COSY and $^1H-^{13}C$ HSQC). The changes of physical properties such as thermal stability, glass transition temperature and light transmittance after the hydrogenation were also investigated using TGA, DSC, and UV.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.1
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• pp.8-18
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• 2022

With rapid industrialization and population growth, fossil fuel use has increased, which has a significant impact on the environment. Hydrogen does not cause contamination in the energy production process, so it seems to be a solution, but it is essential to find an appropriate storage method due to its low efficiency. In this study, Mg-based alloys capable of ensuring safety and high volume and hydrogen storage density per weight was studied, and Mg₂NiH_x synthesized with Ni capable of improving hydrogenation kinetics. In addition, in order to improve thermal stability, a hydrogen storage composite material synthesized with CaO was synthesized to analyze the change in hydrogenation reaction. In order to analyze the changes in the metallurgical properties of the materials through the process, XRD, SEM, BET, etc. were conducted, and hydrogenation behavior was confirmed by TGA and hydrogenation kinetics analysis. In addition, in order to evaluate the impact of the process on the environment, the environmental impact was evaluated through "Material Life Cycle Assessments" based on CML 2001 and EI99' methodologies, and compared and analyzed with previous studies. As a result, the synthesis of CaO caused additional power consumption, which had a significant impact on global warming, and further research is required to improve this.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1001-1007
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• 1996

The conduction mechanisms of the off-current in low temperature (.leq. >$600^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT'S) have been systematically studied. Especially, the temperature and bias dependence of the off-current between hydrogenated and nonhydrogenated poly-Si TFT's were investigated and compared. The off-current of nonhydrogenated poly-Si TF's is because of a resistive current at low gate and drain voltage, thermally activated current at high gate and low drain voltage, and Poole-Frenkel emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation it has shown that the off -current mechanism is caused mainly by thermal activation and that the field-induced current component is suppressed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.665-667
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• 2005

VIATRON TECHNOLOGIES has developed FE-RTP system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The system employs sequential heat treatment methods using temperature control and rapid thermal processor modules. The temperature control modules provide exceptionally uniform heating and cooling of the glass substrates to within ${\pm}2^a\;C$. The rapid thermal process that combines heating with field induction accelerates the treatment rates. The new FE-RTP system can process $730{\times}920mm$ glass substrates as thin as 0.4 mm. The uniform nature of poly-Si films produced by FE-RTP resulted in AMOLED panels with no laser-Muras. Furthermore, FE-RTP system also showed superior performances in other heat treatment processes involved in poly-Si TFT fabrications, such as dopant activation, gate oxide densification, hydrogenation, and pre-compaction.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.98-101
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• 2005

변환 효율이 $16\%$에 근접하는 다결정 실리콘 태양전지를 위한 열처리 공정에 대한 연구를 수행하였다. 고속 열처리 공정이 가능한 RTP 를 사용하여 다결정 실리콘 태양전지의 효율 향상에 요구되는 PECVD $SiN_x$ 반사방지막을 이용한 결정 결함의 수소화 효과를 극대화하는 동시에 양산 가능한 screen-printed contacts 의 특성 (FF >0.76) 올 최적화함으로써 다결정 실리콘 태양전지의 변환 효율을 $15.9\%$까지 향상시킬 수 있었다.

• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.518-525
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• 2019

The mechanical and corrosion behavior of the Russian zirconium fuel cladding alloy E110, predominantly used in VVERs, has been investigated for many decades. The recent commercialization of a new, optimized E110 alloy, produced on a sponge zirconium basis, gave the opportunity to compare the mechanical properties of the old and the new E110 fuel claddings. Axial and tangential tensile test experiments were performed with samples from both claddings in the MTA EK. Due to the anisotropy of the cladding tubes, the axial tensile strength was 10-15% higher than the tangential (measured by ring tensile tests). The tensile strength of the new E110G alloy was 11% higher than that of the E110 cladding at room temperature. Some samples underwent chemical treatment - slight oxidation in steam or hydrogenation - or heat treatment - in argon atmosphere at temperatures between 600 and $1000^{\circ}C$. The heat treatment during the oxidation had more significant effect on the tensile strength of the claddings than the oxidation itself, which lowered the tensile strength as the thickness of the metal decreased. The hydrogenation of the cladding samples slightly lowered the tensile strength and the samples but they remained ductile even at room temperature.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.174-178
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• 2017

The reactions of thermal hydrogen atoms H(g) with the Ge(100) surface were examined with temperature-programmed desorption (TPD) mass spectrometry. Concomitant $H_2$ and $CH_4$ TPD spectra taken from the H(g)-irradiated Ge(100) surface were distinctly different for low and high H(g) doses/substrate temperatures. Reactions suggested by our data are: (1) adsorbed mono(${\beta}_1$)-/di-hydride(${\beta}_2$)-H(a) formation; (2) H(a)-by-H(g) abstraction; (3) $GeH_3$(a)-by-H(g) abstraction (Ge etching); and (4) hydrogenated amorphous germanium a-Ge:H formation. While all these reactions occur, albeit at higher temperatures, also on Si(100), H(g) absorption by Ge(100) was not detected. This is in contrast to Si(100) which absorbed H(g) readily once the surface roughened on the atomic scale. While this result is rather against expectation from its weaker and longer Ge-Ge bond as well as a larger lattice constant, we attribute the absence of direct H(g) absorption to insufficient atomic-scale surface roughening and to highly efficient subsurface hydrogenation at moderate (>300 K) and low (${\leq}300K$) temperatures, respectively.