• Food Engineering Progress
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• v.21 no.3
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• pp.215-224
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• 2017

Resveratrol was incorporated into various combinations of single- and double-layer nanoemulsions, prepared by self-assembly emulsification and complex coacervation with chitosan, alginate, and ${\beta}$-cyclodextrin, respectively. Resveratrol nanoemulsions were composed of medium-chain trigacylglycerols (MCTs), $Tween^{(R)}$ 80, water, chitosan, alginate, and ${\beta}$-cyclodextrin. The corresponding mixtures were formulated for the purpose of being used as a nutraceutical delivery system. Resveratrol nanoemulsions were obtained with particle sizes of 10-800 nm, with the size variation dependent on the emulsification parameters including the ratio of aqueous phase and surfactant ratio. Resveratrol nanoemulsions were characterized by evaluating particle size, zeta-potential value, stability, and release rate. There were no significant changes in particle size and zeta-potential value of resveratrol nanoemulsions during storage for 28 days at $25^{\circ}C$. The stability of resveratrol in the double-layer nanoemulsions complexed with chitosan or ${\beta}$-cyclodextrin was higher, compared with the single-layer nanoemulsions.

• Smart Structures and Systems
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• v.32 no.3
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• pp.167-177
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• 2023

A probabilistic micromechanical framework is proposed to quantify numerically the self-healing capabilities of polymers containing microcapsules. A two-step self-healing process is designed in this study: A probabilistic micromechanical framework based on the ensemble volume-averaging method is derived for the polymers, and a hitting probability model combined with a crack nucleation model is then utilized for encountering microcapsules and microcracks. Using this framework, a series of parametric investigations are performed to examine the influence of various model parameters (e.g., the volume fraction of microcapsules, microcapsule radius, radius ratio of microcracks to microcapsules, microcrack aspect ratio, and scale parameter) on the self-healing capabilities of the polymers. The proposed framework is also implemented into a finite element code to solve the self-healing behavior of tapered double cantilever beam specimens.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.436-437
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• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].

• ETRI Journal
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• v.26 no.6
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.308-313
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• 2006

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

• Journal of Korean Academy of Nursing
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• v.41 no.2
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• pp.225-235
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• 2011

Purpose: To describe psychosocial adjustment of low-income Koreans who have cancer. Methods: Data were collected during 2008 using individual in-depth interviews with 18 Korean people with cancer. The income status of the participants was low, 11 were recipients of the National Basic Livelihood Protection program. Mean age was 58.3 yr and 11 were female. Five participants had stomach cancer, five, colorectal cancer, and four, breast cancer. Data were analyzed using grounded theory methodology. Results: The core category emerged as 'bearing up alone with double suffering'. 'Poverty and cancer: A double suffering' emerged as a causal condition. The adjustment process consisted of three stages: 'forming a treatment will to live', 'practicing for the cure', and 'restructuring self and repaying favors'. Each stage indicated action-interaction strategies which were employed to bear up alone with double suffering during the illness process. Self-reflection, parental responsibility, and support from the public sector played important roles in overcoming the double suffering. Two types of consequences were identified: Transcended life and strained life suppressed by poverty and cancer. Conclusion: The results provide insights into the psychosocial adjustment process for low income Korean with cancer and can be used in developing and implementing efficient home-care services for these people.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.5-12
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• 2005

The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.

• Journal of Family Relations
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• v.22 no.1
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• pp.111-134
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• 2017

Objective: The purpose of this study is to verify the structural relationships among work-family balance, resilience, job satisfaction, parenting self-efficacy and happiness of double income couples with 3~5 years child(ren). Method: This study distributed structured self-reported questionnaires and used the data of 229 couples with 3~5 years child(ren) for an analysis. A confirmatory factor analysis was conducted for checking the measurement unity and a structural equation model was performed to reveal the structural relationship using AMOS software. Results: In a structural relationships among work-family balance, resilience, job satisfaction, parenting self-efficacy and happiness, a total of 13 paths appeared significant. The influence of the husband on the wife was more significant than that of the wife on the husband, and resilience was found to have a strong influence on the happiness of wife and husband. The work-family balance was different for wife and husband. Conclusion: These results suggest that it is necessary to develop various programs and approaches for the development of resilience to promote their happiness. As a policy direction in the future, with a goal of a shift to the paradigm, 'raising children together,' an institutional support should be prepared for the concretization of the formation and practice of the value of co-parenting children.

• Bulletin of the Korean Mathematical Society
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• v.60 no.3
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• pp.829-844
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• 2023

In this paper, we present a new construction for self-dual codes that uses the concept of double bordered construction, group rings, and reverse circulant matrices. Using groups of orders 2, 3, 4, and 5, and by applying the construction over the binary field and the ring F₂ + uF₂, we obtain extremal binary self-dual codes of various lengths: 12, 16, 20, 24, 32, 40, and 48. In particular, we show the significance of this new construction by constructing the unique Extended Binary Golay Code [24, 12, 8] and the unique Extended Quadratic Residue [48, 24, 12] Type II linear block code. Moreover, we strengthen the existing relationship between units and non-units with the self-dual codes presented in [10] by limiting the conditions given in the corollary. Additionally, we establish a relationship between idempotent and self-dual codes, which is done for the first time in the literature.

• Journal of Korea Society of Industrial Information Systems
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• v.24 no.6
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• pp.107-118
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• 2019

The purpose of this study is to analyze the effect of "emotional leadership" on innovative behavior and psychological depression through mediation of job engagement and self-efficacy. In order to accomplish this objective, hypotheses were set up and we distributed questionnaires to bankers and analyzed the final 294 copies. For the hypothesis test, the SPSS Process Macro was used for regression analysis and double mediation. As a result, emotional leadership positively affects self-efficacy, and self-efficacy positively affects job engagement and innovation behavior. Also, job engagement has a negative effect on psychological depression. As a result of verifying the dual mediation effect, both self-efficacy and job engagement showed a full mediating effect.