• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.245-251
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• 1998

Bi-doped n-type PbTe thermoeletric materials were fabricated by mechanical alloying and hot pressing. The intering characteristics and thermoelectric properties of the hot- pressed PbTe were characterized and compared with the properties of the specimens prepared by meltingigrinding method. The hot-pressed PbTe specimens fabricated by mechanical alloying exhibited more negative Seebeck coefficient, higher electrical resistivity and lower thermal conductivity. compared to ones prepared by meltingigrinding. The maximum figure-of-merit increased and the temperature for the maximum figure-of-merit shifted to lower temperature for the specimens fabricated by mechanical alloying. When hot pressed at $650^{\circ}C$, 0.3 wt% Bi-doped PbTe fabricated by mechanical alloying and meltingjgrinding exhibited maximum figure-of-merits of $1.33\times10^{-3}/K$ at $200^{\circ}C$ and $1.07\times10^{-3}/K$ at $400^{\circ}C$ respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.352-357
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% TiB$_2$ and using 61vo1.% SiC - 39vo1.% WC powders with the liquid forming additives of 12wt% $Al_2$O$_3$＋Y$_2$O$_3$ by pressureless annealing at 180$0^{\circ}C$ for 4 hours. Reactions between SiC and transition metal TiB$_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), TiB$_2$ and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-TiB$_2$, and SiC(2H), WC and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-WC composites. $\beta$\$\longrightarrow$$\alpha$-SiC phase transformation was ocurred on the SiC-TiB$_2$, but $\alpha$\$\longrightarrow$$\beta$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the vicker's hardness, the flexural strength and the fracture toughness showed respectively value of 96.2%, 13.34GPa, 310.19Mpa and 5.53Mpaㆍml/2 in SiC-WC composites. The electrical resistivity of the SiC-TiB$_2$ and the SiC-WC composites is all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to 50$0^{\circ}C$. 2.64${\times}$10-2/$^{\circ}C$ of PTCR of SiC-WC was higher than 1.645${\times}$10-3/$^{\circ}C$ of SiC-TiB$_2$ composites.posites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.35-40
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• 2009

Lead free positive temperature coefficient of resistivity (PTCR) ceramics based on $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ solid solution were prepared by a conventional solid state reaction method. The phase structure was showed single phase with perovskite structure regardless calcinations temperature and $Ba_{1-x}(Bi_{0.5}Na_{0.5})_xTiO_3$ structure was transformed from tetragonal to orthorhombic phase at $x{\geq}0.15$ mole. The XRD peaks with $45^{\circ}{\sim}46^{\circ}$ shifted in right the influence of crystal structure change and the intensity of peak was decreased with additive $(Bi_{0.5}Na_{0.5})TiO_3$. The curie temperature risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but disappeared for $(Bi_{0.5}Na_{0.5})TiO_3$ addition more than 0.15 mole in TMA. In relative permittivity, the curie temperature by the transform of ferroelectric phase risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but decreased in relative permittivity. Also, the peak of new curie temperature showed the sample containing $0.025{\sim}0.045$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ near $70^{\circ}C$ caused by phase transform from ferroelectric to ferroelectric and the peak of new curie temperature disappeared at 0.045 mole of $(Bi_{0.5}Na_{0.5})TiO_3$. In our study, it was found that the PTCR in $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ system was possible for $0{\sim}0.025$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ and the maximum curie temperature by phase transition showed about at $145^{\circ}C$.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.349-354
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• 1999

The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

• Journal of Sensor Science and Technology
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• v.25 no.6
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• pp.440-446
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• 2016

This study introduces the characteristics of current-voltage (I-V) and impedance variance for $ZnO-Zn_2BiVO_6-Co_3O_4$ (ZZCo), which is sintered at $900^{\circ}C$, according to temperature changes. ZZCo varistor demonstrates dramatic improvement of non-linear coefficient, ${\alpha}=66$, with lower leakage current and higher insulating resistivity than those of ZZ ($ZnO-Zn_2BiVO_6$) from the aspect of I-V curves. While both systems are thermally stable up to $125^{\circ}C$, ZZCo represents a higher grain boundary activation energy with 1.05 eV and 0.94 eV of J-E-T and from IS & MS, respectively, than that of ZZ with 0.73 eV and 0.82 eV of J-E-T and from IS & MS, respectively, in the region above $180^{\circ}C$. It could be attributed to the formation of $V^*_o$(0.41~0.47 eV) as dominant defect in two systems, as well as the defect-induced capacitance increase from 781 pF to 1 nF in accordance with increasing temperature. On the other hand, both the grain boundary capacitances of ZZ and ZZCo are shown to decrease to 357 pF and 349 pF, respectively, while the resistances systems decreased exponentially, in accordance with increasing temperature. So, this paper suggests that the application of newly formed liquid phases as sintering additives in both $Zn_2BiVO_6$ and the ZZCo-based varistors would be helpful in developing commercialized devices such as chips, disk-type ZnO varistors in the future.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.33-38
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• 2011

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3$ powers were fabricated by mechanical alloying and hot-pressed at temperatures of $350{\sim}550^{\circ}C$. Themoelectric properties of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ were characterized as a function of the hot-pressing temperature. With increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$, the Seebeck coefficient and the electrical resistivity decreased from 237 ${\mu}V/K$ to 210 ${\mu}V/K$ and 2.25 $m{\Omega}-cm$ to 1.34 $m{\Omega}-cm$, respectively. The power factor of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ became larger from $24.95{\times}10^{-4}W/m-K^2$ to $32.85{\times}10^{-4}W/m-K^2$ with increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$. Among the specimens hot-pressed at $350{\sim}550^{\circ}C$, the $(Bi_{0.2}Sb_{0.8})_2Te_3$ hot-pressed at $500^{\circ}C$ exhibited the maximum dimensionless figure-of-merit of 1.09 at $25^{\circ}C$ and 1.2 at $75^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.292-296
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• 2022

(La_0.5Nd_0.2Sr_0.3)MnO₃ specimens were prepared by a solid-state reaction. In all specimens, X-ray diffraction patterns of an orthorhombic structure were shown. The fracture surfaces of (La_0.5Nd_0.2Sr_0.3)MnO₃ specimens showed a transgranular fracture pattern be possibly due to La ions (0.122 nm) as a perovskite A-site dopant substituting for Nd ions (0.115 nm) having a small ionic radius. The full-width at half maximum (FWHM) of the Mn 2p XPS spectra showed a value greater than that [8] of the single valence state, which is believed to be due to the overlapping of Mn²⁺, Mn³⁺, and Mn⁴⁺ ions. The dependence of Mn 2p spectra on the Mn³⁺/Mn⁴⁺ ratio according to sintering time was not observed. Electrical resistivity resulted in the minimum value of 100.7 Ω-cm for the specimen sintered for 9 hours. All specimens show a typical negative temperature coefficient of resistance (NTCR) characteristics. In the 9-hour sintered specimen, TCR, activation energy, and B25/65-value were -1.24%/℃, 0.19 eV, and 2,445 K, respectively.

• Journal of Sensor Science and Technology
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• v.16 no.1
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• pp.24-32
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• 2007

Conductive rubber material was molded in a belt shape to measure respiration. Its resistivity was approximately $0.03{\;}{\Omega}m$ and the resistance-displacement relationship showed a negative exponent. The temperature coefficient was approximately $0.006{\;}k{\Omega}/^{\circ}C$ negligible when practically applied on the abdomen. The conductive rubber belt was applied on a normal male's abdomen with the dimensional change measured during resting breathing. The abdominal signal was differentiated ($F_{m}$) and compared with the accurate standard air flow rate signal ($F_{s}$) obtained by pneumotachometry. $F_{m}$ and $F_{s}$ differed in waveform, but the start and end timings of each breaths were clearly synchronized, demonstrating that the respiratory frequency could be accurately estimated before further processing of $F_{m}$. $F_{m}-F_{s}$ loop showed a nonlinear hysteresis within each breath period, thus 6 piecewise linear approximation was performed, leading to a mean relative error of 14 %. This error level was relatively large for clinical application, though customized calibration seemed feasible for monitoring general variation of ventilation. The present technique would be of convenient and practical application as a new wearable respiratory transducer.