• 정보처리학회논문지D
• /
• 제15D권5호
• /
• pp.609-620
• /
• 2008

모바일 단말에서의 맵 데이터 활용 서비스는 내비게이션, 위치기반서비스 등 그 활용 범위가 다양해지고 있다. 이러한 모바일 단말에서 저장/관리되는 맵 데이터의 크기는 갈수록 커져 수 GB에 이른다. 기존 내비게이션 시스템의 경우, 리소스 제약으로 인해 모바일 단말의 성능을 최대로 활용하기 위하여 맵 데이터를 읽기 최적화된 물리적인 저장형식(PSF: Physical Storage Format)으로 저장 관리하고 있다. 즉, 맵 데이터가 변경된 경우 변경된 부분만의 업데이트가 불가능하여 전체 데이터를 업데이트해야 하는 단점이 있다. 일반적으로 2 GB 데이터를 모바일 단말의 플래시메모리에 기록하는 시간은 수십 분이 소요된다. 따라서 본 연구에서는 이러한 기존의 내비게이션용 맵 데이터의 부분 업데이트가 불가능한 점을 해결하고자 모바일 공간 DBMS을 개발하였다. 그리고, 모바일 공간 DBMS에서의 내비게이션 서비스의 성능을 보장하기 위한 기법을 제시하고 실험을 통하여 이를 검증하였다.

• 대한전자공학회논문지
• /
• 제26권8호
• /
• pp.1290-1298
• /
• 1989

A new dynamic RAM cell called Trench Epitaxial Transistor Cell (TETC) has been developed for 4M to 16M DRAMS. Also the fabrication process for device isolation which can decrease the narrow effect using SEG process has been developed. We verified the characteristic of the new cell structure with the PICSES simulator on VAX8450.

• 전자공학회논문지D
• /
• 제34D권8호
• /
• pp.41-51
• /
• 1997

The device simulator (BANDIS) which can analyze efficiently the electrical characteristics of the semiconductor devices under the three dimensional stationary conditions on the IBM PC was developed. Poisson, electon and hole continuity equations are discretized y te galerkin method using a tetrahedron as af finite element. The frontal solver which has exquisite data structures and advanced input/output functions is dused for the matrix solver which needs the highest cost in the three dimensional device simulation. The discretization method of the continuity equations used in BANDIS are compared with that of the scharfetter-gummel method used in the commercial three-dimensional device. To verify an accuracy and the efficiency of the discretization method, the simulation results of the PN junction diode and the BJT from BANDIS are compared with those of the commercial three-dimensiional device simulator such as DAVINCI. The maximum relative error within 2% and the average number of iterations needed for the convergence is decreased by more than 20%. The total simulation time of the BJT with 25542 nodes is decreased to about 60% compared with that of DAVINCI.

• 전자공학회논문지A
• /
• 제30A권2호
• /
• pp.53-63
• /
• 1993

Device degradations by the Fowler-Nordheim tunneling have been studide. The changes of device characteristics such as the threshold voltage, subthreshold slope, I-.or. curves have been measured after bidirectionally stressing n-channel MOSFET's and p-channel MOSFET's. Also the interface states have been directly measured by the charge pumping methodIt is shown that the change of interface states is determined by the number of hole carriers tunneling the gate oxide and electrons which are trapped in the gate oxide. Also, in this paper, we propose a model for device lifetime limited by the increase of interface states.

• 전자공학회논문지A
• /
• 제33A권4호
• /
• pp.129-135
• /
• 1996

In this paper, the hot carrier effect and device degradation of deep submicrometer SC-PMOSFETs have been measured and characterized. It has been shown that the substrate current of a 0.15$\mu$m PMOSFET increases with increasing of impact ionization rate, and the impact ionization rate is a function of the gate length and gate bias voltage. Correlation between gate current and substrate current is investigated within the general framework of the lucky-electron. It is found that the impact ionization rate increases, but the device degradation is not serious with decreasing effective channel length. SCIHE is suggested as the possible phusical mechanism for enhanced impact ionization rate and gate current reduction. Considering the hot carrier induced device degradation, it has been found that the maximum supply voltage is about -2.6V for 0.15$\mu$m PMOSFET.

• 한국ITS학회 논문지
• /
• 제7권5호
• /
• pp.90-96
• /
• 2008

본 논문은 텔레메틱스 단말용 음성인식을 위한 음성향상 단일 칩 알고리듬을 제시한다. 제안된 방법은 잡음제거와 에코제거의 두 단계로 구성되어 있으며, 첫 단계로 크로스 스펙트럼 추정에 기반한 적응필터를 통해 에코를 제거하고, 두번째 단계로 Generalized Gamma분포기반의 LSA 음성추정 방식 추정을 통해 외부 배경잡음을 제거하여 음성의 음질을 향상시킨다. 적은 계산량이 요구되는 제안된 알고리즘을 토대로 구현된 단일 칩의 성능은 다양한 잡음환경에서 신호 대잡음비율과 음성인식 평가에서 기존의 방법보다 향상된 결과를 나타내었다.

• 한국인터넷방송통신학회논문지
• /
• 제12권6호
• /
• pp.117-125
• /
• 2012

최근 자동차 시장은 기존의 기계 위주의 기술에서 차량 정보화 및 전자화 기술로 빠르게 패러다임 변화가 이루어지고 있다. 특히, 텔레매틱스 분야는 자동차 제조사 및 이동통신 업체 간의 긴밀한 협조체제를 구축하여 차량 정보화 서비스를 위한 기술 개발을 가속화하고 있다. 그러나 텔레매틱스 서비스는 기지국과 차량, 차량 대 차량 간에 무선통신에 의해 정보교환이 이루어지고 있으므로 전파 간섭에 의한 서비스 품질의 저하를 피할 수 없다. 이에 본 논문에서는 무선통신기반의 차량 네트워크 환경에서 차량과 무선 통신 상호간 간섭을 분석할 수 있는 장비를 설계 구현하고, 시뮬레이션과 실제 차량의 실측실험을 통하여 차량 내 외부에 발생하는 간섭을 감소시켜 통신 품질을 높일 수 있는 방법을 제시한다.

• 전자공학회논문지A
• /
• 제33A권7호
• /
• pp.230-244
• /
• 1996

We derive analytic expressions for the spontaneous emission spectrum (SES) of a multisection distributed feedback (DFB) structure device employing complex coupled gratings including the effects of both facets reflections. The multisection DFB structure device used in the analysis is a general model which allows the independent phase of a grating in each section, and the sections without gratings. The expressions are the same as those derived by makino and glinski in case the gratings are index coupled and the phase of a grating in each section, ${\varphi}_k$ is '0' which means the phase of gratings in the device is ocntinuous. The expressions for the SES of a phase-shift-controlled (PSC) DFB structure device using tunable devices are derived from the general expressions. The number of parametes of the expressions is reduced by using the parameter of effective phase shift defined by the sum of the phase shift in a PSC region and the difference of the phase of a grating in each active region. Equations showing the effect of both facets reflections and the effective phase shift on the SES are derived. The validaty of the equations is verified by computer simultions. Computer simulation results also show the possibility of evaluating the structure parametes of the device from its SES.

• 대한전자공학회논문지
• /
• 제26권11호
• /
• pp.1706-1711
• /
• 1989

Unit processes for the fabrication of HEMT(high electron mobility transistor)was studied and the optimum conditions of them were applied to the fabrifcation of a discrete HEMT device. The HEMT with a nominal gate-source spacing of 3.6\ulcorner and a gate length of 2.8\ulcorner showed a transconductance of 46.1mS/mm and a threshold voltage of -0.29V. A source-drain voltage of 2.0V for a saturation current of 35mA/mm was achieved.

• 전자공학회논문지A
• /
• 제33A권7호
• /
• pp.127-133
• /
• 1996

In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.